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    UF840 Search Results

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    UF840 Price and Stock

    Cree, Inc. JE2835AWT-00-0000-0B0A0UF840E

    LED J NEUTRAL WHT 4000K SMD
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    DigiKey JE2835AWT-00-0000-0B0A0UF840E Cut Tape 835,730 1
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    JE2835AWT-00-0000-0B0A0UF840E Digi-Reel 835,730 1
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    onsemi NUF8401MNT4G

    FILTER RC(PI) 100 OHM/12PF SMD
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    DigiKey NUF8401MNT4G Digi-Reel 3,517 1
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    Rochester Electronics NUF8401MNT4G 1,099,248 1
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    onsemi NUF8402MNT4G

    FILTER RC(PI) 100 OHM/17PF SMD
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    DigiKey NUF8402MNT4G Cut Tape 1 1
    • 1 $0.56
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    NUF8402MNT4G Digi-Reel 1 1
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    • 100 $0.3735
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    NUF8402MNT4G Reel 4,000
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    Mouser Electronics NUF8402MNT4G 841
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    Newark NUF8402MNT4G Cut Tape 1,343 1
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    Rochester Electronics NUF8402MNT4G 996,516 1
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    Rochester Electronics LLC NUF8402MNT4G

    DATA LINE FILTER, 8 FUNCTION(S),
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    DigiKey NUF8402MNT4G Bulk 1,175
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    Flip Electronics NUF8402MNT4G

    FILTER RC(PI) 100 OHM/17PF SMD
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    UF840 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UF840 Microsemi Ultra Fast Recovery Rectifier Scan PDF
    UF840 Microsemi Ultrafast Recovery Rectifiers Scan PDF
    UF840L-TA3-T Unisonic Technologies 8A, 500V, 0.85ohm, N-CHANNEL POWER MOSFET Original PDF
    UF840-TA3-T Unisonic Technologies 8A, 500V, 0.85ohm, N-CHANNEL POWER MOSFET Original PDF
    UF840-TF3-T Unisonic Technologies 8A, 500V, 0.85ohm, N-CHANNEL POWER MOSFET Original PDF

    UF840 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original
    PDF UF840 UF840L-TA3-T UF840G-TA3-T UF840L-TF1-T UF840G-TF1-T UF840L-TF2-T UF840G-TF2-T UF840L-TF3-T UF840Gat QW-R502-047

    specifications of power mosfet

    Abstract: N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original
    PDF UF840 O-220 O-220F1 O-220F2 O-220F O-262 O-263 QW-R502-047 specifications of power mosfet N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A

    UF840

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original
    PDF UF840 UF840L-TA3-T UF840G-TA3-T UF840L-TF1-T UF840G-TF1-T UF840L-TF2-T UF840G-TF2-T UF840L-TF3-T UF840G-TF3-T UF840L-TF3T-T UF840

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original
    PDF UF840 UF840L UF840-TA3-T UF840L-TA3-T O-220 UF840-TF3-T UF840L-TF3-T QW-R502-047

    DFN16

    Abstract: No abstract text available
    Text: UF8401MN 8 Line ESD/EMI Protection P b Lead Pb -Free 16 FEATURES: 1 • EMI/RFI Filter with Integrated TVS for ESD Protection ■ ESD Protection to IEC 61000-4-2 (ESD) Level 4, ±15kV (air), ±8kV (contact) ■ Integration of 40 Discrete Components ■ Filter Performance: 25dB Minimum Attenuation: 800MHz to 2.5GHz


    Original
    PDF UF8401MN 800MHz DFN16 29-Oct-07 DFN16

    MOSFET 50V 100A TO-220

    Abstract: UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original
    PDF UF840 O-220 O-220F UF840L UF840-TA3-T UF840L-TA3-T QW-R502-047 MOSFET 50V 100A TO-220 UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V

    Abstract: MOSFET 400V TO-220 TQ2 rohs UF840-TQ2-T UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T uf840l
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 „ DESCRIPTION 1 TO-263 TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original
    PDF UF840 O-263 O-220 O-220F O-220F1 UF840L UF840G QW-R502-047 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V MOSFET 400V TO-220 TQ2 rohs UF840-TQ2-T UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T uf840l

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original
    PDF UF840 UF840L UF840-TA3-T UF840L-TA3-T O-220 UF840at QW-R502-047

    Untitled

    Abstract: No abstract text available
    Text: UF8401MN 8 Line ESD/EMI Protection P b Lead Pb -Free 16 FEATURES: 1 • EMI/RFI Filter with Integrated TVS for ESD Protection ■ ESD Protection to IEC 61000-4-2 (ESD) Level 4, ±15kV (air), ±8kV (contact) ■ Integration of 40 Discrete Components ■ Filter Performance: 25dB Minimum Attenuation: 800MHz to 2.5GHz


    Original
    PDF UF8401MN 800MHz DFN16 29-Oct-07

    Untitled

    Abstract: No abstract text available
    Text: UF810-UF880 Ultra Fast Rectifiers VOLTAGE RANGE: 100 - 800 V CURRENT: 8.0A TO - 220AC 2.8± 0.1 Features Metal-Semiconductor junction with guard ring 4.5± 0.2 10.2± 0.2 1.4± 0.2 Epitaxial construction φ 3.8± 0.15 xxx 19.0± 0.5 High surge capability


    Original
    PDF UF810-UF880 220AC O--220AC UF810 UF820 UF830 UF840 UF860 UF880

    UHVP806

    Abstract: PHILIPS+23967 21159 TO-254 23967 RSF0840 UFR-10
    Text: Micmsemj Ultra Fast Rectifiers UFR Part Number UES1404 UHVP802 UF830 RSF0840 UHVP804 UF840 UF850 RSF0860 UHVP806 UF860 UF870 UF880 1N5812 1N5813 1N6657 1N6657R 1N5815 1N66S8 1N6658R 1N6659 1N6659R 1N6079 1N6080 UFT121Q 1N6081 UFT1215 UFT1220 UFT1230 UFT1240


    OCR Scan
    PDF -220AC O-220 O-254 UHVP806 PHILIPS+23967 21159 TO-254 23967 RSF0840 UFR-10

    f830

    Abstract: UF830 UF840 UF850 uf85
    Text: Ultra Fast FRecovery Rectifiers UF830 U r 850 -C Dim. Inches Minimum -B A B C D E F G H J K L M N P Base Cathode J. •Ji .390 .045 .180 .245 .550 .139 .100 -.500 .190 .014 .080 .028 .045 M illim eter Maximum Minimum .415 .055 .190 .260 .650 .155 .120


    OCR Scan
    PDF UF830 UF850 T0-220AC UF840 UF850 30nce f830 uf85

    UF850

    Abstract: UF830 UF840 316-0O
    Text: Ultra Fast Recovery Rectifiers UF830 —C UF850 Dim. Inches Minimum —B A B C D E F G H J K L M N P Base Cathode J . dt .3 90 .045 .180 .245 .550 .139 .100 -.500 .190 .014 .0 80 .028 .0 45 M illim eter Maximum Minimum .415 .0 55 .190 .2 60 .650 .155


    OCR Scan
    PDF UF830 UF850 T0-220AC UF840 UF850 316-0O

    ESDA6V8

    Abstract: WGBLC24C WOST05C ESDA6V1W6 esda6v8v5 WGRV05-4 TVS 200 diode ESDA14V2 ESDA25 WOSD12
    Text: W EITRON TECH NO LOG Y TVS I ESD Protection Diode PPK C Ir 8 /2 0 ms (pF) @V rwm (W) Typ (MA) 300 20 220 20 190 5.0 13.3 150 4.0 5.0 600 1.0 20 WOSTOSC 5.0 6.1 WOSTO8C 8.0 8.5 WOST12C 12.0 WOST15C 15.0 ESDA5V3 V rwm V br (V) (V) WOST04 4.0 5.0 WOSTOS 5.0


    OCR Scan
    PDF WOST04 WOST05 WOST12 OT-23 WOST04C WOST12C WOST15C ESDA14V2 ESDA25 ESDA6V8 WGBLC24C WOST05C ESDA6V1W6 esda6v8v5 WGRV05-4 TVS 200 diode WOSD12