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California Eastern Laboratories (CEL) UPA812T-A RF TRANS 2 NPN 10V 7GHZ SOT363
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DigiKey	UPA812T-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) UPA810T-A RF TRANS 2 NPN 12V 4.5GHZ SOT363
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DigiKey	UPA810T-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) UPA810T-T1 RF TRANS 2 NPN 12V 4.5GHZ 6SO
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DigiKey	UPA810T-T1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) UPA814T-T1 RF TRANS 2 NPN 6V 9GHZ 6SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPA814T-T1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.55075	Buy Now
California Eastern Laboratories (CEL) UPA810T-T1-A NPN SILICON AMPLIFIER AND OSCILL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPA810T-T1-A	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.6	Buy Now
	UPA810T-T1-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	UPA810T-T1-A		1,258		11	1 - 10 - 100 $0.1117 1000 $0.1117 10000 $0.1117	Buy Now
Arrow Electronics	UPA810T-T1-A	Cut Strips	1,258	10 Weeks	1	1 $0.125 10 $0.1231 100 $0.1174 1000 $0.1117 10000 $0.1117	Buy Now

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UPA81 Datasheets (79)

Part	Manufacturer	Description	Datasheet Type	PDF
uPA81	NEC	Semiconductor Selection Guide 1995	Original	PDF
uPA81	NEC	Semiconductor Selection Guide	Original	PDF
UPA81	NEC	Silicon Darlington transistor array	Scan	PDF
UPA810	NEC	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD	Original	PDF
uPA810	NEC	Semiconductor Selection Guide	Original	PDF
UPA810T	California Eastern Laboratories	Npn Silicon High Frequency Transistor	Original	PDF
UPA810T	NEC	Consumer-use Ultra-high Frequency Bipolar Transistor	Original	PDF
UPA810T	NEC	NPN silicon high frequency transistor.	Original	PDF
uPA810T	NEC	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2SC4226	Original	PDF
UPA810T-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 4.5GHZ SOT363	Original	PDF
UPA810T-A	California Eastern Laboratories	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
UPA810TC	NEC	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD	Original	PDF
uPA810TC	NEC	NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER M	Original	PDF
UPA810TC-T1	NEC	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD	Original	PDF

UPA810TF	NEC	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
UPA810TF	NEC	Consumer-use Ultra-high Frequency Bipolar Transistor	Original	PDF
uPA810TFB-T1	NEC	High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-Pin 2 x 2SC4226) Small Mini Mold	Original	PDF
uPA810TGB	NEC	High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-Pin 2 x 2SC4226) Small Mini Mold	Original	PDF
UPA810T-T1	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN HF FT=4.5GHZ SOT-363	Original	PDF
UPA810T-T1	California Eastern Laboratories	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF

UPA81 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NE688 Abstract: S21E UPA814T UPA814T-T1 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA	Original	PDF	UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour S21E UPA814T-T1
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA814TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 high • FLAT LEAD STYLE: Reduced lead inductance improves electrical	Original	PDF	OT-363 UPA814TC UPA814TC NE688 50GHz UPA814TC-T1, 24-Hour
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR UPA812T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz	Original	PDF	UPA812T NE681 UPA812T UPA812T-T1-A 24-Hour
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR UPA811T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz	Original	PDF	NE680 UPA811T UPA811T UPA811T-T1-A 24-Hour
8003* transistor Abstract: UPA814T UPA814T-T1 NE688 S21E transistor C 110 transistor f 20 nf Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz	Original	PDF	UPA814T NE688 UPA814T UPA814T-T1, 24-Hour 8003* transistor UPA814T-T1 S21E transistor C 110 transistor f 20 nf
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA810TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high • FLAT LEAD STYLE: Reduced lead inductance improves electrical	Original	PDF	OT-363 UPA810TC UPA810TC NE856 UPA810TC-T1, 24-Hour
NE856 Abstract: S21E UPA810TC UPA810TC-T1 Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA810TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high • FLAT LEAD STYLE: Reduced lead inductance improves electrical	Original	PDF	UPA810TC OT-363 UPA810TC NE856 UPA810TC-T1, 24-Hour S21E UPA810TC-T1
UPA814TC Abstract: UPA814TC-T1 NE688 S21E Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA814TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 high • FLAT LEAD STYLE: Reduced lead inductance improves electrical	Original	PDF	UPA814TC OT-363 UPA814TC NE688 UPA814TC-T1, 24-Hour UPA814TC-T1 S21E
NE856 Abstract: S21E UPA810T UPA810TF chip die npn transistor Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA810TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm hight • HIGH COLLECTOR CURRENT: IC MAX = 100 mA	Original	PDF	UPA810TF OT-363 UPA810TF NE856 UPA810TF-T1, 24-Hour S21E UPA810T chip die npn transistor
NE688 Abstract: S21E UPA814T UPA814T-T1 UPA814T-T1-A Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA	Original	PDF	UPA814T NE688 UPA814T S21E UPA814T-T1 UPA814T-T1-A
OF transistor 13 Abstract: ultra low noise NPN transistor Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • • PACKAGE OUTLINE S06 (Top View) SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package 2.1 ± 0.1 LOW NOISE FIGURE:	Original	PDF	UPA810T NE856 UPA810T UPA810T-T1 UPA810T-A UPA810T-T1-A OF transistor 13 ultra low noise NPN transistor
UPA810T-T1-A Abstract: NE856 S21E UPA810T UPA810T-A UPA810T-T1 ultra low noise NPN transistor Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN:	Original	PDF	UPA810T NE856 UPA810T UPA810T-T1-A S21E UPA810T-A UPA810T-T1 ultra low noise NPN transistor
Untitled Abstract: No abstract text available Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA	Original	PDF	UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour
ultra low noise NPN transistor Abstract: NE680 npn dual emitter RF Transistor ultra low noise transistor S21E UPA811T UPA811T-T1 Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 7.5 dB TYP at 2 GHz	Original	PDF	UPA811T NE680 UPA811T UPA811T-T1, 24-Hour ultra low noise NPN transistor npn dual emitter RF Transistor ultra low noise transistor S21E UPA811T-T1

NE680 Abstract: S21E UPA811T UPA811T-T1 UPA811T-T1-A Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT	Original	PDF	UPA811T NE680 UPA811T S21E UPA811T-T1 UPA811T-T1-A
613 GB 123 CT Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S	OCR Scan	PDF	uPA812T 2SC4227) /xPA812T 613 GB 123 CT
nec d 588 Abstract: NEC 2532 NEC 2504 Text: DATA SHEET SILICON TRANSISTOR uPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The /xPA811T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS am plify low noise in the VHF band to the UHF band.	OCR Scan	PDF	uPA811T 2SC4228) /xPA811T nec d 588 NEC 2532 NEC 2504
Untitled Abstract: No abstract text available Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • UPA811T PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz	OCR Scan	PDF	NE680 UPA811T UPA811T UPA811T-T1
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 2 . 1 + 0.1 LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz -	OCR Scan	PDF	NE688 UPA814T UPA814T UPA814T-T1, 24-Hour
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA812T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN:	OCR Scan	PDF	NE681 UPA812T UPA812T UPA812T-T1, 24-Hour
NEC 2501 re 443 Abstract: LS 1691 BM je 371 Transistor Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA813T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD PACKAGE DRAW INGS /xPA813T has built-in 2 transistors which were developed for UHF. (Unit: mm) FEATURES • 2.1 ±0.1 High fT 1,25±0.1	OCR Scan	PDF	uPA813T 2SC4570) /xPA813T jiPA813T-T1 NEC 2501 re 443 LS 1691 BM je 371 Transistor
low power rf transistor T Abstract: No abstract text available Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View LOW NOISE FIGURE: IMF = 1 .9 dB TYP at 2 GHz 2 .1 1 0 . 1 HIGH GAIN: - 1 . 2 5 ± 0.1-	OCR Scan	PDF	NE680 UPA811T UPA811T UPA811T-T1 24-Hour low power rf transistor T
TI 9023 IC data Abstract: 2SC4226 APPLICATION NOTES Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA81 OT HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The /xPA81 OT has built-in 2 low-voltage transistors which are designed to PACKAGE DRAW INGS	OCR Scan	PDF	uPA810T 2SC4226) /xPA81 TI 9023 IC data 2SC4226 APPLICATION NOTES
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD PACKAGE DRAWINGS FEATURES • • Low Voltage O peration, Low Phase Distortion (U n it: m m ) Low Noise	OCR Scan	PDF	uPA814T 2SC5193)

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UPA81 Search Results

UPA81 Price and Stock

California Eastern Laboratories (CEL) UPA812T-A

California Eastern Laboratories (CEL) UPA810T-A

California Eastern Laboratories (CEL) UPA810T-T1

California Eastern Laboratories (CEL) UPA814T-T1

California Eastern Laboratories (CEL) UPA810T-T1-A

UPA81 Datasheets (79)

UPA81 Datasheets Context Search

NE688

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8003* transistor

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NE856

UPA814TC

NE856

NE688

OF transistor 13

UPA810T-T1-A

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ultra low noise NPN transistor

NE680

613 GB 123 CT

nec d 588

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NEC 2501 re 443

low power rf transistor T

TI 9023 IC data

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