800H
Abstract: HN29W25611ST-80 Hitachi DSA0047
Text: HN29W25611S Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1233B (Z) Rev. 2.0 Mar. 8, 2001 Description The Hitachi HN29W25611S Series is CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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HN29W25611S
057-sector
072-bit)
ADE-203-1233B
800H
HN29W25611ST-80
Hitachi DSA0047
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pd2111
Abstract: 800H HN29W25611ST-80 Hitachi DSA0014 d2111
Text: HN29W25611S Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1233C (Z) Rev. 3.0 Oct. 22, 2001 Description The Hitachi HN29W25611S Series is CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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HN29W25611S
057-sector
072-bit)
ADE-203-1233C
pd2111
800H
HN29W25611ST-80
Hitachi DSA0014
d2111
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Hitachi DSA00276
Abstract: No abstract text available
Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221A (Z) Preliminary Rev. 0.1 May. 10, 2001 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V51211
113-sector
248-bit)
ADE-203-1221A
D-85622
Hitachi DSA00276
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800H
Abstract: ADE-203-1178A HN29W25611T HN29W25611T-50H sa 2111 Hitachi DSA00358
Text: HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1178A (Z) Rev. 1.0 May. 10, 2000 Description The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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HN29W25611T-50H
057-sector
072-bit)
ADE-203-1178A
HN29W25611T
16nents
800H
ADE-203-1178A
HN29W25611T-50H
sa 2111
Hitachi DSA00358
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800H
Abstract: D2111 HN29V102414T-50H Hitachi DSA00480
Text: HN29V102414T-50H 1G AND type Flash Memory More than 32,113-sector 542,581,248-bit x 2 ADE-203-1335A (Z) Rev. 1.0 Apr. 5, 2002 Description The Hitachi HN29V102414T-50H is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V102414T-50H
113-sector
248-bit)
ADE-203-1335A
HN29V102414T-50H
800H
D2111
Hitachi DSA00480
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800H
Abstract: HN29V51211T-50H Hitachi DSA00480 D2048
Text: HN29V51211T-50H 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1333A (Z) Rev. 1.0 Apr. 5, 2002 Description The Hitachi HN29V51211T-50H is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V51211T-50H
113-sector
248-bit)
ADE-203-1333A
HN29V51211T-50H
800H
Hitachi DSA00480
D2048
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HN29V25611A
Abstract: 800H HN29V25611AT-50 Hitachi DSA0047
Text: HN29V25611A Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1275B (Z) Rev. 1.0 Jan. 25, 2002 Description The Hitachi HN29V25611A Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V25611A
057-sector
072-bit)
ADE-203-1275B
800H
HN29V25611AT-50
Hitachi DSA0047
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800H
Abstract: HN29W25611T HN29W25611T-50H Hitachi DSA0014
Text: HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1178B (Z) Rev. 2.0 May. 15, 2001 Description The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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HN29W25611T-50H
057-sector
072-bit)
ADE-203-1178B
HN29W25611T
800H
HN29W25611T-50H
Hitachi DSA0014
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O2-A2
Abstract: sa 2111 800H HN29W25611 HN29W25611T-50 Hitachi DSA0023 Hitachi DSA00230
Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995B (Z) Rev. 1.0 Dec. 10, 1999 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W25611
057-sector
072-bit)
ADE-203-995B
O2-A2
sa 2111
800H
HN29W25611T-50
Hitachi DSA0023
Hitachi DSA00230
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Hitachi DSA0091
Abstract: HN29W51214ST-80
Text: HN29W51214S Series 512M AND type Flash Memory More than 16,057-sector 271,299,072-bit x 2 ADE-203-1155C (Z) Rev. 3.0 Mar. 8, 2001 Description The Hitachi HN29W51214S Series is stacked 2 chips Hitachi 256-Mbit Flash memory (HN29W25611S) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase
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HN29W51214S
057-sector
072-bit)
ADE-203-1155C
256-Mbit
HN29W25611S)
HN29W25611S
Hitachi DSA0091
HN29W51214ST-80
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800H
Abstract: HN29W12811 HN29W12811T-60 Hitachi DSA00358
Text: HN29W12811 Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1183C (Z) Rev. 2.0 Feb. 7, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W12811
029-sector
984-bit)
ADE-203-1183C
800H
HN29W12811T-60
Hitachi DSA00358
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HN29W12811
Abstract: HN29W12811BP-60 Hitachi DSA0070
Text: HN29W12811BP Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1260 (Z) Rev. 0.0 Apr. 18, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W12811BP
029-sector
984-bit)
ADE-203-1260
HN29W12811
HN29W12811BP-60
Hitachi DSA0070
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Hitachi DSA002734
Abstract: 2112N
Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221C (Z) Rev. 1.0 Jan. 25, 2002 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V51211
113-sector
248-bit)
ADE-203-1221C
Hitachi DSA002734
2112N
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800H
Abstract: HN29V102414 HN29V102414T-50
Text: HN29V102414 Series 1G AND type Flash Memory More than 32,113-sector 542,581,248-bit x 2 ADE-203-1265B (Z) Rev. 1.0 Jan. 25, 2002 Description The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V102414
113-sector
248-bit)
ADE-203-1265B
800H
HN29V102414T-50
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K2111
Abstract: 800H HN29V25611AT-50H Hitachi DSA00480
Text: HN29V25611AT-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1334A (Z) Rev. 1.0 Apr. 5, 2002 Description The Hitachi HN29V25611AT-50H Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The
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HN29V25611AT-50H
057-sector
072-bit)
ADE-203-1334A
HN29V25611AT-50H
K2111
800H
Hitachi DSA00480
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d2111
Abstract: HN29V25611A PD2048 Hitachi DSA0092 2112N HN29V25611ABP HN29V25611ABP-50
Text: HN29V25611ABP Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1281 (Z) Preliminary Rev. 0.0 Aug. 10, 2001 Description The Hitachi HN29V25611A Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V25611ABP
057-sector
072-bit)
ADE-203-1281
HN29V25611A
d2111
PD2048
Hitachi DSA0092
2112N
HN29V25611ABP-50
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800H
Abstract: HN29V51211 HN29V51211T-50 Hitachi DSA00358
Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221 (Z) Preliminary Rev. 0.0 Sep. 20, 2000 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V51211
113-sector
248-bit)
ADE-203-1221
b2100
800H
HN29V51211T-50
Hitachi DSA00358
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HN29W12811
Abstract: HN29W12811BP-60 Hitachi DSA0047
Text: HN29W12811BP Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1260 (Z) Preliminary Rev. 0.0 Apr. 18, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W12811BP
029-sector
984-bit)
ADE-203-1260
HN29W12811
HN29W12811BP-60
Hitachi DSA0047
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800H
Abstract: HN29V51211 HN29V51211T-50 Hitachi DSA0047
Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221B (Z) Preliminary Rev. 0.2 Jul. 25, 2001 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V51211
113-sector
248-bit)
ADE-203-1221B
800H
HN29V51211T-50
Hitachi DSA0047
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Hitachi DSA002710
Abstract: No abstract text available
Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995 (Z) Preliminary, Rev. 0.0 Jan. 8, 1999 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The
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HN29W25611
057-sector
072-bit)
ADE-203-995
Hitachi DSA002710
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DSA002786
Abstract: Hitachi DSA002786
Text: HN29V25611A Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1275A (Z) Preliminary Rev. 0.1 Jul. 25, 2001 Description The Hitachi HN29V25611A Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V25611A
057-sector
072-bit)
ADE-203-1275A
D-85622
DSA002786
Hitachi DSA002786
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Hitachi DSA0092
Abstract: 800H HN29W12811 HN29W12811T-60
Text: HN29W12811 Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1183D (Z) Rev. 3.0 Apr. 13, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W12811
029-sector
984-bit)
ADE-203-1183D
Hitachi DSA0092
800H
HN29W12811T-60
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800H
Abstract: HN29V102414 HN29V102414T-50 Hitachi DSA0047
Text: HN29V102414 Series 1G AND type Flash Memory More than 32,113-sector 542,581,248-bit x 2 ADE-203-1265A (Z) Preliminary Rev. 0.1 Jul. 25, 2001 Description The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V102414
113-sector
248-bit)
ADE-203-1265A
800H
HN29V102414T-50
Hitachi DSA0047
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Hitachi DSA00276
Abstract: No abstract text available
Text: HN29V102414 Series 1G AND type Flash Memory More than 32,113-sector 542,581,248-bit x 2 ADE-203-1265 (Z) Preliminary Rev. 0.0 Apr. 13, 2001 Description The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V102414
113-sector
248-bit)
ADE-203-1265
D-85622
Hitachi DSA00276
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