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    TSAL Price and Stock

    Vishay Semiconductors TSAL4400

    EMITTER IR 940NM 100MA RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSAL4400 Bulk 14,900 1
    • 1 $0.57
    • 10 $0.334
    • 100 $0.57
    • 1000 $0.15461
    • 10000 $0.12337
    		Buy Now

    Vishay Semiconductors TSAL6400

    EMITTER IR 940NM 100MA RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSAL6400 Bulk 12,511 1
    • 1 $0.57
    • 10 $0.334
    • 100 $0.57
    • 1000 $0.15461
    • 10000 $0.12558
    		Buy Now

    Vishay Semiconductors TSAL6100

    EMITTER IR 940NM 100MA RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSAL6100 Bulk 7,163 1
    • 1 $0.57
    • 10 $0.334
    • 100 $0.57
    • 1000 $0.15461
    • 10000 $0.12558
    		Buy Now

    Vishay Semiconductors TSAL6200

    EMITTER IR 940NM 100MA RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSAL6200 Bulk 7,117 1
    • 1 $0.57
    • 10 $0.334
    • 100 $0.57
    • 1000 $0.15461
    • 10000 $0.12558
    		Buy Now

    Vishay Semiconductors TSAL6102UL

    IREMITTER HIGHPOWR 940NM 5MM 10D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSAL6102UL Bulk 3,197 1
    • 1 $0.65
    • 10 $0.385
    • 100 $0.65
    • 1000 $0.18237
    • 10000 $0.14954
    		Buy Now
    Find more TSAL price and stock on Findchips.com

    TSAL Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSAL0001 Microchip Technology Equipment - Specialty, Test and Measurement, LOGIC ANALYZER USB 8CH 24MHZ Original PDF
    TSAL0002 Microchip Technology Equipment - Specialty, Test and Measurement, LOGIC ANALYZER USB 16CH 100MHZ Original PDF
    TSAL4400 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in diam 3 mm (T-1) Package Original PDF
    TSAL5100 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package Original PDF
    TSAL5300 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package Original PDF
    TSAL5300 Vishay Intertechnology EMITTER, IR 950NMEMITTER, IR 950NM; Radiant intensity:45mW/Sr; Angle, half:22(degree); Case style:T - 13/4; Current, If Vf:100mA; Current, If max:200mA; Current, peak pulse:1.5mA; Current, reverse leakage max:10uA; Diameter, Original PDF
    TSAL5300-FSZ Vishay Siliconix High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Original PDF
    TSAL5300-GSZ Vishay Siliconix High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Original PDF
    TSAL6100 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package Original PDF
    TSAL6200 Vishay LED, INFRARED, GAAS, T-1 3/4 (TSAL6200) Original PDF
    TSAL6200 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in phi 5 mm (T - 1.75) Package Original PDF
    TSAL6200 Vishay Telefunken GaAs-GaAlAs IR Emitting Diode in Deg 5 mm (T-1 ) Package Original PDF
    TSAL6400 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package Original PDF
    TSAL7200 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package Original PDF
    TSAL7300 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in ph 5 mm (T-1.75) Package Original PDF
    TSAL7300 Vishay Semiconductors Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH POWR 950NM 5MM 2 Original PDF
    TSAL7300 Vishay Telefunken GaAs-GaAlAs IR Emitting Diode in Deg 5 mm (T-1 3-4) Package Original PDF
    TSAL7400 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package Original PDF
    TSAL7600 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package Original PDF

    TSAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSAL6400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm


    Original     		PDF TSAL6400 2002/95/EC 2002/96/EC TSAL6400 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    TSAL5100 Vishay

    Abstract: TSAL5100
    Text: TSAL5100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL5100 TSAL5100 D-74025 20-May-99 TSAL5100 Vishay

    Untitled

    Abstract: No abstract text available
    Text: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL7600 TSAL7600 D-74025 20-May-99

    TSAL7200

    Abstract: No abstract text available
    Text: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL7200 TSAL7200 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 94 8636 DESCRIPTION Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 940 nm


    Original     		PDF TSAL4400 TEFT4300 2002/95/EC 2002/96/EC TSAL4400 11-Mar-11

    TSAL6200

    Abstract: No abstract text available
    Text: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity


    Original     		PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original     		PDF TSAL7600 TSAL7600 18-Jul-08

    TSAL7200

    Abstract: No abstract text available
    Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity


    Original     		PDF TSAL7200 2002/95/EC 2002/96/EC TSAL7200 18-Jul-08

    TSAL6100 application

    Abstract: TSAL6100 GaAs 1000 nm Infrared Diode,
    Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity


    Original     		PDF TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 TSAL6100 application GaAs 1000 nm Infrared Diode,

    TSAL6100

    Abstract: TSAL6100 application
    Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original     		PDF TSAL6100 TSAL6100 08-Apr-05 TSAL6100 application

    Untitled

    Abstract: No abstract text available
    Text: TSAL5300 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL5300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL5300 TSAL5300 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TSAL6400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original     		PDF TSAL6400 TSAL6400 08-Apr-05

    TSAL6200

    Abstract: No abstract text available
    Text: TSAL6200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL6200 TSAL6200 D-74025 20-May-99

    81008

    Abstract: TSAL5300
    Text: TSAL5300 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL5300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL5300 TSAL5300 D-74025 20-May-99 81008

    Untitled

    Abstract: No abstract text available
    Text: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL6100 2002/95/EC 2002/96/EC TSAL6100 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    TSAL7400

    Abstract: high power infrared led
    Text: TSAL7400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL7400 2002/95/EC 2002/96/EC TSAL7400 18-Jul-08 high power infrared led

    high power infrared led

    Abstract: TSAL7600
    Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL7600 2002/95/EC 2002/96/EC TSAL7600 18-Jul-08 high power infrared led

    TSAL6100

    Abstract: high power infrared led
    Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 high power infrared led

    Untitled

    Abstract: No abstract text available
    Text: Tem ic TSAL4400 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 3 mm T -l Package Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol­


    OCR Scan     		PDF TSAL4400 TSAL4400 D-74025 04-Mar-98

    08D diode

    Abstract: No abstract text available
    Text: TSAL7600 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm iJ -V A Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technol­


    OCR Scan     		PDF TSAL7600 TSAL7600 D-74025 ec-98 08D diode

    diode chn 940

    Abstract: chn 940 CT-98
    Text: TSAL6200 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package Description T S A L6200 is a high efficiency infrared em itting diode in G aAIAs on G aAs technology, m olded in clear, bluegrey tinted plastic packages. In com parison w ith the standard G aAs on G aAs


    OCR Scan     		PDF TSAL6200 L6200 D-74025 ct-98 diode chn 940 chn 940 CT-98

    TSAL5100

    Abstract: No abstract text available
    Text: TSAL5100 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package D escription TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol­


    OCR Scan     		PDF TSAL5100 TSAL5100 D-74025 21-Sep-98