Untitled
Abstract: No abstract text available
Text: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS808C06
500ns,
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com TS808C06R-TE24R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage Average output current Non-repetitive forward surge current*
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TS808C06R-TE24R
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Untitled
Abstract: No abstract text available
Text: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS808C06
500ns,
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Untitled
Abstract: No abstract text available
Text: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS808C06
500ns,
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DES-8
Abstract: No abstract text available
Text: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS808C06
500ns,
DES-8
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TS808C06
Abstract: No abstract text available
Text: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS808C06
500ns,
TS808C06
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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TS808C06
Abstract: No abstract text available
Text: DEVICE NAME ： DATE DRAWN FEB.-26-‘ 07 CHECKED FEB.-26-‘ 07 CHECKED FEB.-26-‘ 07 NAME APPROVED DWG.NO. T h i s m a t e r i a l a n d th e i n f o r m a t i o n h e r e i n i s t h e p r o pe r t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
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TS808C06R-TE24R
MS5D3036
Techn10
H04-004-03a
TS808C06
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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TL130
Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009
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ERA82-004
SC802-04
SC802-06
SC802-09
ERA83-004
ERA83-006
ERA81-004
ERA84-009
ERA85-009
CB803-03
TL130
tc122 25 8 4
yg802c10
SD883-04
SD833-04
LM3661TL-1.40
TC8520
tc9145
TS802C09
ERA82-004
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G-160B
Abstract: pg123s15 2FI300A-060 yg121s15 6RI50E-080M5 PA905C6 2fi300a esja18-08 ERD81-004 ESJA83-16A
Text: Notice of Scheduled Discontinuation of Products Because we are unable to ensure the continued production and maintenance of some manufacturing equipment for our semiconductor products, the products for which stable production and sufficient reliability are expected to become difficult will be discontinued as
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A837C04,
PA847C04
PA886C02
YA846C04
ERD75-*
ERE75-*
SID01-*
SIE01-*
ERG75-*
SIG01-*
G-160B
pg123s15
2FI300A-060
yg121s15
6RI50E-080M5
PA905C6
2fi300a
esja18-08
ERD81-004
ESJA83-16A
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yg802c10
Abstract: LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04
Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps. 接合保存温度
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O220AB
O220F
TS805C04
TS805C06
TP805C04
ESAC83-004
ESAC83M-004R
ESAC83M-006R
YG805C04R
YG805C06R
yg802c10
LM3661TL-1.40
YG803C04
YG803C06
TL1115
tc-118 sd
TL130
YG805C10
YG835C04
YG811S04
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TS808C06
Abstract: ts808c
Text: TS808C06 3 oa '• O utline D raw ings SCHOTTKY BARRIER DIODE 4.5 int 132 I n t I ?:4 2.7 JEDEC : Features EIA J S urface m o u n t device. • X fc T -K *# # tjf c l' C on n e ctio n D iagram S u p e r high speed s w itc h in g . H igh reliab ility by p lan er d e sig n .
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TS808C06
500ns,
ts808c
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H125
Abstract: TS808C06 a514 ba 513 diode
Text: TS808C06 3 oa SCHOTTKY BARRIER DIODE i Features Surface m ount device. m nm & m C onnection Diagram Super high speed sw itchin g. mk • fcl rf High reliability by planer design. • f f l i i ! ! A pplications iD () G) H igh speed p ow er sw itch in g .
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TS808C06
500ns,
H125
a514
ba 513 diode
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H125
Abstract: TS808C06
Text: TS808C06 3 oa SCHOTTKY BARRIER DIODE i Features Surface m ount device. m nm & m C onnection Diagram Super high speed sw itchin g. mk • fcl rf High reliability by planer design. • f f l i i ! ! A pplications iD () G) H igh speed p ow er sw itch in g .
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TS808C06
500ns,
H125
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Diode GP 514
Abstract: H125 T760 T810 TS808C06
Text: TS808C06 3 oa : Outline Drawings SCHOTTKY BARRIER DIODE — k?2 oa T 2.7 JEDEC : Features EIAJ Surface m ount device. m nm & m Connection Diagram S uper high speed sw itch in g . • 7 V - ; r H i f f i li Jr* fc 1 S 8 H ± High reliability by planer design
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TS808C06
500ns,
JII15
41-l231
95t/R89
Shl50
Diode GP 514
H125
T760
T810
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30A high speed diode
Abstract: TS808C06
Text: TS808C06 30A SCHOTTKY BARRIER DIODE • Outline Drawing H Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching ■ Maximum Ratings & Characteristics
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TS808C06
500ns,
30A high speed diode
TS808C06
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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5n fast recovery diodes
Abstract: 30A 45V SCHOTTKY BARRIER RECTIFIER GENERAL SEMICONDUCTOR SMD DIODES smd diode 0.5A fast 600v LOW LOSS FAST RECOVERY DUAL DIODES
Text: CONTENTS I. II. III. IV. V. SMD RECTIFIER DIODE LIST. SMD PACKAGE OUTLINE DRAWINGS.
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SC802-04
TS902C2
TS902C3
TS912S6
TS906C2
5n fast recovery diodes
30A 45V SCHOTTKY BARRIER RECTIFIER
GENERAL SEMICONDUCTOR SMD DIODES
smd diode 0.5A fast 600v
LOW LOSS FAST RECOVERY DUAL DIODES
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Untitled
Abstract: No abstract text available
Text: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04
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1c-79
c-85C
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Untitled
Abstract: No abstract text available
Text: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6
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TS802C06
TS802C09
TP802C04
TP802C06
TP802C09
ESAC82-004
ESAC82M-004
O-22QF15
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ERG81-004
Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Text: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *
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ERA82-004
ERA83-004
ERA81-004
ERA83-006
ERA84-009
ERA85-009
ERB83-004
ERB81-004
ERB83-006
ERB84-009
ERG81-004
ERB38-D
ESAC6
YG802C04
ESAD33-02
ERA18
era-84
YG811S0
YG802C06
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,
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ERA82-004
ERA83-004
ERA81-004
ERB83-004
ERC81-004
ERC81S-004
ERC80-004
ERC62-004
ERC80M-004
ERC62M-004
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