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    TRENCH MOS Search Results

    TRENCH MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
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    TRENCH MOS Price and Stock

    Nexperia NX7002AK,215

    MOSFETs SOT23 N CHAN 60V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI NX7002AK,215 Reel 5,067,000 3,000
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    • 10000 $0.0138
    		Buy Now

    Nexperia 2N7002,215

    MOSFETs 2N7002/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002,215 Reel 4,866,000 3,000
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    • 10000 $0.026
    		Buy Now

    Nexperia 2N7002/HAMR

    MOSFETs SOT23 N CHAN 60V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002/HAMR Reel 3,081,000 3,000
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    • 10000 $0.0228
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    Nexperia BSS84AK,215

    MOSFETs SOT23 P CHAN 50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSS84AK,215 Reel 2,301,000 3,000
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    • 10000 $0.0198
    		Buy Now

    Nexperia 2N7002BK,215

    MOSFETs 2N7002BK/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002BK,215 Reel 528,000 3,000
    • 1 -
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    • 10000 $0.0218
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    Find more TRENCH MOS price and stock on Findchips.com

    TRENCH MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    QS6U24

    Abstract: TSMT6 QS6M4
    Text: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 2.9 (6) (4) (3) (5) (2) 0.4 (1) 1pin mark 0.85 0.16 zFeatures 1) The QS6U24 combines Pch Trench MOSFET with a Nch Trench MOSFET in a single TSMT6 package. 2) Pch Trench MOSFET and Nch Trench MOSFET


    Original     		PDF QS6U24 TSMT6 QS6M4

    FGH15T120

    Abstract: No abstract text available
    Text: FGH15T120SMD 1200 V, 15 A Field Stop Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum


    Original     		PDF FGH15T120SMD FGH15T120

    Untitled

    Abstract: No abstract text available
    Text: FGH25T120SMD 1200 V, 25 A Field Stop Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum


    Original     		PDF FGH25T120SMD

    diode TA 20-08

    Abstract: P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A Bi-Directional P-Channel mosfet
    Text: SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power


    Original     		PDF SPC4703 SPC4703combines -20V/-3 diode TA 20-08 P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A Bi-Directional P-Channel mosfet

    so8 footprint

    Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
    Text: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon


    Original     		PDF OT669) PSMN5R5-60YS) so8 footprint sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL

    ISL9N2357D3ST

    Abstract: N2357 n2357d
    Text: ISL9N2357D3ST Data Sheet June 2002 30V, 0.007 Ohm, 35A, N-Channel UltraFET Trench Power MOSFET UltraFET® Trench UltraFET® Trench from Fairchild is a new advanced MOSFET technology that achieves the lowest possible onresistance per silicon area while maintaining fast switching


    Original     		PDF ISL9N2357D3ST 5600pF ISL9N2357D3ST N2357 n2357d

    P-Channel MOSFET code 1A

    Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
    Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect


    Original     		PDF SPC6801 SPC6801combines -30V/-2 105ise P-Channel MOSFET code 1A P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V

    igbt 40a 600v

    Abstract: No abstract text available
    Text: FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate


    Original     		PDF FGA20N120FTD igbt 40a 600v

    Schottky Diode 20V 5A

    Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
    Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect


    Original     		PDF SPC6801 SPC6801combines -30V/-2 105ise Schottky Diode 20V 5A Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A

    Untitled

    Abstract: No abstract text available
    Text: FGL35N120FTD 1200 V, 35 A Field Stop Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.


    Original     		PDF FGL35N120FTD O-264 100oC

    tea1761

    Abstract: heat sink to220 Silicon controller rectifier TEA1750 package to220 PSMN1R6-30PL PSMN5R0-80PS PSMN2R0-30PL PSMN7R6-60PS PSMN3R0-60PS
    Text: New high-performance Trench 6 MOSFETs in a TO220 package for power management applications Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with new devices in the industry-standard TO220


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SNN0310Q Advanced N-Ch Trench MOSFET 100V, 3A N-Channel Power Trench MOSFET Features • Max. RDS ON = 150m at VGS = 10V, ID = 2A  Low gate charge: Qg=18nC (Typ.)  High performance trench technology for extremely low RDS(on)  100% avalanche tested


    Original     		PDF SNN0310Q OT-223 24-NOV-11 KSD-T5A012-000

    TO220 package

    Abstract: PSMN4R3-30PL PSMN trench PSMN012-80PS PSMN050-80PS PSMN1R6-30PL PSMN2R0-30PL PSMN2R2-40PS PSMN4R4-80PS
    Text: Ten new high-performance Trench 6 MOSFETs in a TO220 package for power supply and motion control Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with ten new devices in the industry-standard


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP15U50S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSP15U50S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309033

    Untitled

    Abstract: No abstract text available
    Text: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401021

    Untitled

    Abstract: No abstract text available
    Text: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1310024

    10U45

    Abstract: No abstract text available
    Text: TSP10U45S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309024 10U45

    Untitled

    Abstract: No abstract text available
    Text: TSF20U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF20U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311001

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023

    Untitled

    Abstract: No abstract text available
    Text: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311002

    Untitled

    Abstract: No abstract text available
    Text: TSP15U100S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSP15U100S J-STD-020 2011/65/EU 2002/96/EC O-277A D1309033

    Untitled

    Abstract: No abstract text available
    Text: TSF30H120C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF30H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311020

    Untitled

    Abstract: No abstract text available
    Text: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401022