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    TRC 817 Price and Stock

    FCL Ciomponents Limited FTR-C1CA005G

    Low Signal Relays - PCB SIGNAL
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    Mouser Electronics FTR-C1CA005G 938
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    FCL Ciomponents Limited FTR-C1CA012G

    Low Signal Relays - PCB SIGNAL
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    Mouser Electronics FTR-C1CA012G 900
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    FCL Ciomponents Limited FTR-C1GA003G

    Low Signal Relays - PCB Ultra Min 3VDC
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    Mouser Electronics FTR-C1GA003G 848
    • 1 $4.24
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    FCL Ciomponents Limited FTR-C2CA003G

    Low Signal Relays - PCB SIGNAL
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    Mouser Electronics FTR-C2CA003G 466
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    FCL Ciomponents Limited FTR-C1GA024G

    Low Signal Relays - PCB SIGNAL
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    Mouser Electronics FTR-C1GA024G 314
    • 1 $4.24
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    TRC 817 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH52256C-70LL

    Abstract: LH52256C
    Text: LH52256C/CH FEATURES • 32,768 x 8 bit organization • Access time: 70 ns MAX. CMOS 256K (32K × 8) Static RAM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SK-DIP 28-PIN SOP • Supply current: Operating: 45 mA (MAX.) 10 mA (MAX.) (tRC, tWC = 1 µs) Standby: 40 µA (MAX.)


    Original     		PDF LH52256C/CH 28-PIN LH52256C-70LL LH52256C

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Rev 1.21, June 2006 HYB18L512160BF-7.5 HYE18L512160BF-7.5 DRAMs for Mobile Applications 512-Mbit Mobile-RAM Mobile-RAM RoHS compliant Memory Products Edition 2006-05 Published by Qimonda AG, Am Campeon 10-12, 81726 München, Germany Qimonda AG 2006.


    Original     		PDF HYB18L512160BF-7 HYE18L512160BF-7 512-Mbit 01132005-06IU-IGVM 18L512160BF-7 PG-TFBGA-54

    Hitachi DSA00164

    Abstract: Nippon capacitors
    Text: HB56AW1672E-A Series 16777216-word x 72-bit High Density Dynamic RAM Module ADE-203-817A Z Rev. 1.0 Aug. 20, 1997 Description The HB56AW1672E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family, and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The


    Original     		PDF HB56AW1672E-A 16777216-word 72-bit ADE-203-817A 64-Mbit HM5164400A) 16-bit 74LVT16244) Hitachi DSA00164 Nippon capacitors

    NT-1/4-0-SP-CS5480

    Abstract: No abstract text available
    Text: 16 M DRAM DATA COLLECTION 4 M-word by 4-bit, Revision A 1997 Document No. M12205XJ1V0IF00 1st edition Date Published January 1997 N Printed in Japan DRAM PROCESS 1 DIE PHOTOGRAPH 2 DIFFERENCES BETWEEN REVISION A AND REVISION L 3 µPD42S16405L, 4216405L


    Original     		PDF M12205XJ1V0IF00 PD42S16405L, 4216405L PD42S17405L, 4217405L PD42S16405, PD42S17405, PD42S16400L, 4216400L PD42S17400L, NT-1/4-0-SP-CS5480

    Untitled

    Abstract: No abstract text available
    Text: Information 16M DRAM DATA COLLECTION 1M-word by 16-bit, Revision P Document No. M12824XJ1V0IF00 1st edition Date Published September 1997 N 1997 Printed in Japan [MEMO] 2 SUMMARY OF CONTENTS CHAPTER 1 DRAM PROCESS .


    Original     		PDF 16-bit, M12824XJ1V0IF00 PPD42S16165L, 4216165L.

    Untitled

    Abstract: No abstract text available
    Text: Information 16 M DRAM DATA COLLECTION 2M-word by 8-bit, Revision P Document No. M12859XJ1V0IF00 1st edition Date Published September 1997 N 1997 Printed in Japan [MEMO] 2 SUMMARY OF CONTENTS CHAPTER 1 DRAM PROCESS .


    Original     		PDF M12859XJ1V0IF00 PPD42S16805L, 4216805L. PPD42S17805L, 4217805L.

    RAS 0510

    Abstract: as4c14400-60jc AS4C14400-40JC alliance as4C14405 AS4C14405-50JC AS4C14405-60JC AS4C14400 AS4C14405 4C14400-70 alliance promotion
    Text: High Performance 1Mx4 CMOS DRAM AS4C14400 AS4C14405 1M-bit × 4 CMOS DRAM Fast page mode or EDO Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words × 4 bits • High speed - RAS-only or CAS-before-RAS refresh


    Original     		PDF AS4C14400 AS4C14405 20/26-pin AS4C14400) AS4C14405) RAS 0510 as4c14400-60jc AS4C14400-40JC alliance as4C14405 AS4C14405-50JC AS4C14405-60JC AS4C14400 AS4C14405 4C14400-70 alliance promotion

    28-pin SOJ SRAM

    Abstract: 32K8 AS7C3256-12JC AS7C3256L ci 741 AS7C3256-20JC AS7C3256 AS7C3256-10JC AS7C3256-10PC
    Text: High Performance 32Kx8 3.3V CMOS SRAM AS7C3256 AS7C3256L Low voltage 32K×8 CMOS SRAM Features • Organization: 32,768 words × 8 bits • Single 3.3 ± 0.3V power supply • 5V tolerant I/O specification • High speed - 10/12/15/20 ns address access time


    Original     		PDF AS7C3256 AS7C3256L 28-pin 28-pin SOJ SRAM 32K8 AS7C3256-12JC AS7C3256L ci 741 AS7C3256-20JC AS7C3256 AS7C3256-10JC AS7C3256-10PC

    TAA 621

    Abstract: MD 202 TAA 621 applications AS7C1026-15JC AS7C1026 AS7C31026 7C1026 AS7C31026-25JC AS7C1026-25JC J-Squared Technologies
    Text: High Performance 64Kx16 CMOS SRAM AS7C1026 AS7C31026 64K×16 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 16 bits • High speed - 12/15/20/25 ns address access time - 6/8/10/12 ns output enable access time • Low power consumption


    Original     		PDF AS7C1026 AS7C31026 44-pin 85titute TAA 621 MD 202 TAA 621 applications AS7C1026-15JC AS7C1026 AS7C31026 7C1026 AS7C31026-25JC AS7C1026-25JC J-Squared Technologies

    AS7C1024-20PC

    Abstract: AS7C1024 7C256
    Text: High Performance 128Kx8 CMOS SRAM AS7C1024 AS7C1024L 128K×8 CMOS SRAM Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20/25/35 ns address access time - 3/3/4/5/6/8 ns output enable access time • Low power consumption - Active: 770 mW max 10 ns cycle


    Original     		PDF AS7C1024 AS7C1024L 32-pin 7C256 7C512 AS7C1024-20PC AS7C1024

    TAA 621 applications

    Abstract: TAA 521 A taa 621 63RD MD 202 Concord Electronics SW 3395 6V TAA 761 A AS7C3513 AS7C513
    Text: High Performance 32Kx16 CMOS SRAM AS7C513 AS7C3513 32K×16 CMOS SRAM Advance information Features • Organization: 32,768 words × 16 bits • High speed - 12/15/20 ns address access time - 6/8/10 ns output enable access time • Low power consumption


    Original     		PDF AS7C513 AS7C3513 44-pin AS7C3513) TAA 621 applications TAA 521 A taa 621 63RD MD 202 Concord Electronics SW 3395 6V TAA 761 A AS7C3513 AS7C513

    Untitled

    Abstract: No abstract text available
    Text: DEVICE OPERATIONS CMOS SDRAM SDRAM Device Operations * Samsung Electronics reserves the right to change products or specification without notice. ELECTRONICS DEVICE OPERATIONS CMOS SDRAM A. MODE REGISTER FIELD TABLE TO PROGRAM MODES Register Programmed with MRS


    Original     		PDF A10/AP

    AS7C3512-15PC

    Abstract: AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465
    Text: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 AS7C3512L Low voltage 64K×8 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • 5V tolerant I/O specification • High speed - 12/15/20/25/35 ns address access time


    Original     		PDF AS7C3512 AS7C3512L 32-pin AS7C3512-15PC AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465

    GH17L

    Abstract: cx171 GM71C17403B gm71c18163b 8011S GM71C17403 7011s gm71c18163
    Text: GM7lCl6403B/BL LG Semicon Co.,Ltd. 4,194,304 WORDS x 4 BIT CbIOS DYNAMIC RAM Features Description The GM71 C 16403BIBL is the new generation d y n a m i c R A M organized 4,194,304 words x 4 b i t . GM71 C 16403B/BL h a s realized h i g h e r density, higher performance and various functions


    Original     		PDF 16403BIBL 16403B/BL 6403B/BL GM71Vl8163B GM71VSl8163BL GH17L cx171 GM71C17403B gm71c18163b 8011S GM71C17403 7011s gm71c18163

    AS7C512-20JC

    Abstract: AS7C512 AS7C512-15pc transistor sb 772 AS7C512-12JC AS7C512L-20JC ES 95 SB Plastic 32-pin 300 mil SOIC 7C256 AS7C512-12PC
    Text: High Performance 64Kx8 CMOS SRAM AS7C512 AS7C512L 64K×8 CMOS SRAM Features • Organization: 65,536 words × 8 bits • High speed - 12/15/20/25/35 ns address access time - 3/4/5/6/8 ns output enable access time • Low power consumption - Active: 688 mW max 12 ns cycle


    Original     		PDF AS7C512 AS7C512L 32-pin 7C256 7C1024 AS7C512-20JC AS7C512 AS7C512-15pc transistor sb 772 AS7C512-12JC AS7C512L-20JC ES 95 SB Plastic 32-pin 300 mil SOIC AS7C512-12PC

    AS7C1024

    Abstract: AL205 AS7C31024 IN317
    Text: Hi gh Per for m an ce 128K 128 K x8 C M OS S R A M A S 7C1024 A S 7C31024 1288K ×8 CMOS S R A M 12 Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time • Low power consumption


    Original     		PDF 7C1024 7C31024 32-pin 7C512 AS7C1024 AL205 AS7C31024 IN317

    taa 723

    Abstract: concord
    Text: High Performance 32Kx9 CMOS SRAM AS7C259 AS7C259L 32K×9 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words × 9 bits • 2.0V data retention (L version) • High speed • Equal access and cycle times – 12/15/20/25/35 ns address access time


    Original     		PDF AS7C259 AS7C259L 32-pin taa 723 concord

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56AW1672E-A Series 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-817A Z Rev. 1.0 Aug. 20, 1997 Description The HB56AW1672E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family, and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The


    OCR Scan     		PDF HB56AW1672E-A 16777216-word 72-bit ADE-203-817A 64-Mbit HM5164400A) 16-bit 74LVT16244) Nippon capacitors

    HY51V18164B

    Abstract: No abstract text available
    Text: «HYUNDAI HY51V18164B Series 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V18164B 16-bit 16-bit. 04711-20Cf) 1AD60-10-MAY95 HY51V18164BJC

    HY51V18164B

    Abstract: No abstract text available
    Text: H Y 51V 18164BSeries •HYUNDAI 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF 16-bit HY51V18164B 16-bit. 470C11 10X168} 4b750Ã 1AD60-10-MAY95

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT _ MC-422000A32BA,422000A32FA 2M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-422000A32BA /FA series is a 2 097 152 words by 32 bits dynamic RAM module on which 4 pieces of 16M DRAM uPD 4218160 are assembled.


    OCR Scan     		PDF MC-422000A32BA 422000A32FA 32-BIT 422000A32-60 0055b3b

    HM401

    Abstract: BSC MML command
    Text: .uv ii y n Ai HY51V17400A Series 4M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400Ais the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17400A HY51V17400Ais HY51V17400Ato 1AD35-00-MAY94 HY51V17400AJ HY51V17400ASU HY51V17400AT HY51V17400ASLT HM401 BSC MML command

    SIT8103AC-13-33E-24.00000T

    Abstract: No abstract text available
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT _ I1PD42S1780QL, 42178QQL 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The jUPD42S17800L, 4217800L are 2,097,152 w ords by 8 bits CMOS dynamic RAMs. The fast page mode


    OCR Scan     		PDF uPD42S1780QL 42178QQL jUPD42S17800L, 4217800L PD42S17800L 28-pin jiPD42S17800L-A60 4217800L-A60 /JPD42S17800L-A70, SIT8103AC-13-33E-24.00000T

    RE300

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /fPD42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The/iPD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode _ _ capability realize high speed access and low pow er consumption.


    OCR Scan     		PDF uPD42S17800L uPD4217800L The/iPD42S17800L, 4217800L pPD42S17800L 28-pin 17800L 7800L-A uPD42Sl RE300