MARKING rks
Abstract: BFR949F transistor bf 186
Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR949F
EHA07524
Jan-04-2002
MARKING rks
BFR949F
transistor bf 186
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3904 ic
Abstract: 3904 NPN k 4213 transistor k 4213 BFR340L3
Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BFR340L3
EHA07536
Jun-16-2003
3904 ic
3904 NPN
k 4213
transistor k 4213
BFR340L3
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fbs MARKING TRANSISTOR
Abstract: No abstract text available
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BFR360T
VPS05996
EHA07524
Jan-28-2003
fbs MARKING TRANSISTOR
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BFR360L3
Abstract: No abstract text available
Text: BFR360L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BFR360L3
EHA07536
Jul-01-2003
BFR360L3
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transistor k 4213
Abstract: BFR340T transitor RF 98 SC75 BFR34* transistor
Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BFR340T
VPS05996
EHA07536
Jul-01-2003
transistor k 4213
BFR340T
transitor RF 98
SC75
BFR34* transistor
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Untitled
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR380L3
EHA07536
Jan-24-2003
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MJE 131
Abstract: BFR340L3
Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BFR340L3
EHA07536
Dec-17-2001
MJE 131
BFR340L3
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BFP36
Abstract: No abstract text available
Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4 Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BFP360W
VPS05605
OT343
1E-14
Jan-28-2003
BFP36
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TRANSISTOR MARKING NK
Abstract: No abstract text available
Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996
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PDF
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BFR380T
VPS05996
EHA07524
Feb-18-2003
TRANSISTOR MARKING NK
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transistor 1107
Abstract: No abstract text available
Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996
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PDF
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BFR380T
VPS05996
EHA07524
Jan-29-2002
transistor 1107
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BFP36
Abstract: No abstract text available
Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4 Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BFP360W
VPS05605
OT343
Aug-20-2002
BFP36
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TRANSISTOR MARKING NK
Abstract: transistor bf 271 p 605 transistor equivalent BFR340T
Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR340T
VPS05996
EHA07536
Jan-29-2002
TRANSISTOR MARKING NK
transistor bf 271
p 605 transistor equivalent
BFR340T
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Untitled
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR380L3
EHA07536
Jan-29-2002
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BFP360W
Abstract: BFP36
Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4 Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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BFP360W
VPS05605
OT343
Jun-16-2003
BFP360W
BFP36
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Transistor BC 1078
Abstract: Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425
Text: BFP620F E7764 XYs NPN Silicon Germanium RF Transistor Preliminary data High gain low noise RF transistor 3 Small package 1.4 x 0.8 x 0.59 mm 2 4 Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz Maximum stable gain
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BFP620F
E7764
Jul-03-2003
Transistor BC 1078
Transistor BC 1078 transistor
transistor marking R2s
TRANSISTOR MARKING YB
BC 1078 transistor
BF 245 C equivalent
BI 425
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Untitled
Abstract: No abstract text available
Text: BFP620F XYs NPN Silicon Germanium RF Transistor Preliminary data High gain low noise RF transistor 3 Small package 1.4 x 0.8 x 0.59 mm 2 4 Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz Maximum stable gain
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BFP620F
Feb-20-2003
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Untitled
Abstract: No abstract text available
Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR949F
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BFR360T
Abstract: SC75
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR360T
VPS05996
EHA07524
Jun-16-2003
BFR360T
SC75
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Untitled
Abstract: No abstract text available
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR360T
VPS05996
EHA07524
Jan-29-2002
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transistor marking c1 ghz
Abstract: transistor marking c3 ghz
Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996
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Original
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PDF
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BFR380T
VPS05996
EHA07524
Jul-29-2002
transistor marking c1 ghz
transistor marking c3 ghz
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Untitled
Abstract: No abstract text available
Text: BFR360L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR360L3
210mA
EHA07536
Feb-25-2002
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BFR380L3
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFR380L3
EHA07536
Jun-16-2003
BFR380L3
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BFR380T
Abstract: SC75
Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996
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Original
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PDF
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BFR380T
VPS05996
EHA07524
Jul-01-2003
BFR380T
SC75
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K 3677
Abstract: No abstract text available
Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR340T
VPS05996
K 3677
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