30c53
Abstract: 2SA1784 2SC4644 ITR04653
Text: Ordering number:ENN3520 PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .
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ENN3520
2SA1784/2SC4644
VCEO400V)
2SA1784/2SC4644]
2SA1784
30c53
2SA1784
2SC4644
ITR04653
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ITR04653
Abstract: 2SA1784 2SC4644
Text: Ordering number:ENN3520 PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .
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ENN3520
2SA1784/2SC4644
VCEO400V)
2SA1784/2SC4644]
2SA1784
ITR04653
2SA1784
2SC4644
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2SA1784
Abstract: 2SC4644 ITR04653
Text: Ordering number:ENN3520 PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .
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ENN3520
2SA1784/2SC4644
VCEO400V)
2SA1784/2SC4644]
2SA1784
2SA1784
2SC4644
ITR04653
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smd marking BG
Abstract: 2SB1124 br 39 SMD Bg marking
Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1124 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Absolute Maximum Ratings Ta = 25 Parameter
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2SB1124
-100mA
smd marking BG
2SB1124
br 39 SMD
Bg marking
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smd marking BJ
Abstract: 2SB1302 BJ SMD IC
Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1302 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. Very small size making it easy to provide highdensity,
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2SB1302
-60mA
smd marking BJ
2SB1302
BJ SMD IC
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2SB1121
Abstract: No abstract text available
Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1121 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity,
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2SB1121
-75mA
2SB1121
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wt smd
Abstract: vebo Transistors marking WT SMD MARKING 2SC4694 WT SMD MARKING
Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25
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2SC4694
100mA
wt smd
vebo
Transistors marking WT
SMD MARKING
2SC4694
WT SMD MARKING
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25
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2SC4694
100mA
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2SC5310
Abstract: No abstract text available
Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC5310 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Large current capacitance. 0.55 Adoption of FBET, MBIT processes. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low collector-to-emitter saturation voltage.
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2SC5310
OT-23
500mA
2SC5310
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MP14
Abstract: SL2364C transistor 45 f 123 Monolithic Transistor Pair SL2364 6 "transistor arrays" ic Dual Long-Tailed Pair Transistor Array transistor array high speed
Text: ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a monolithic integrated circuit manufactured on a very high
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SL2364
SL2364
SL2364C
200mW
MP14
SL2364C
transistor 45 f 123
Monolithic Transistor Pair
6 "transistor arrays" ic
Dual Long-Tailed Pair Transistor Array
transistor array high speed
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SL2364
Abstract: Monolithic Transistor Pair
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a
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SL2364
SL2364
Monolithic Transistor Pair
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Monolithic Transistor Pair
Abstract: dilmon mp14 SL2364 SL2364C Dual Long-Tailed Pair Transistor Array 6 "transistor arrays" ic
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a
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SL2364
SL2364
200mW
Monolithic Transistor Pair
dilmon
mp14
SL2364C
Dual Long-Tailed Pair Transistor Array
6 "transistor arrays" ic
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SL2364C
Abstract: Dual Long-Tailed Pair Transistor Array Monolithic Transistor Pair SL2364 MP14
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a
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SL2364
SL2364
SL2364C
Dual Long-Tailed Pair Transistor Array
Monolithic Transistor Pair
MP14
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2SC6043
Abstract: No abstract text available
Text: 2SC6043 Ordering number : ENN8326 2SC6043 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process.
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2SC6043
ENN8326
2SC6043
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2SB1205
Abstract: 2SB1143 2sc4675
Text: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.
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2SB764/2SD863
2SB892/2SD1207*
2SB927/2SD1247*
2SB985/2SD1347*
2SB1131*
2SD1145
2SA1641/2SC4306*
2SB1201/2SD1801*
2SB1202/2SD1802*
2SB1203/2SD1803*
2SB1205
2SB1143
2sc4675
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NPN POWER TRANSISTOR 2SD1878
Abstract: transistor 2sD1880 D1879 sd1878
Text: SAXYO TRANSISTO RS FOR CRT DISPLAY VIDEO O U TPUT A P PLICATIONS Transistors for High~Definition Monitor TV Applications Transistors for Video Output Applications The use of new technology, FBET Fold-Back Electrode Transistor and MBIT (Multi-Base Island Transistor), that are
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50MHz.
MT921226TR
NPN POWER TRANSISTOR 2SD1878
transistor 2sD1880
D1879
sd1878
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Diode 1525
Abstract: 2SC4769 to220ml
Text: s tu m Transistors for Very H igh~Definition CRT Display Horizontal Deflection Output Use 1 Transistors for CRT horizontal deflection output use must be of high-breakdown voltage, high-current, high-speed switching type to provide higher frequency. We have the following lineup of transistors for various uses.
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2SC3591
2SC4478
2SC444C
2SC4441
2SC3636
2SC3637
2SC3638
2SC3642
2SC3643
2SC3644
Diode 1525
2SC4769
to220ml
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Untitled
Abstract: No abstract text available
Text: SAMtYO TRANSISTORS FOR CRT DISPLAY VIDEO OUTPUT APPLICATIONS Transistors for High-Definition Monitor TV Applications Transistors for V i d e o O u t p u t A p p l i c a t i o n s Th e use of n e w te ch nology, e n t i r e l y or ig in al This makes FB ET
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50MHz.
S30617TR
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SL2364
Abstract: SL2364C 6 "transistor arrays" ic transistor package- max ratings of T05 Monolithic Transistor Pair CM10 SL2363C dilmon
Text: SL2363C & SL2364C VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to form a dual long-tailed pair with tail transistors, They are monolithic integrated circuits manufactured on a very high speed bipolar process which
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SL2363C
SL2364C
SL2363C
SL2364C
SL2363
SL2364
200mW
6 "transistor arrays" ic
transistor package- max ratings of T05
Monolithic Transistor Pair
CM10
dilmon
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SL2363C
Abstract: dilmon CM10 SL2364 SL2364C 6 "transistor arrays" ic transistor package- max ratings of T05
Text: SL2363C & SL2364C VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to form a dual long-tailed pair with tail transistors. They are monolithic integrated circuits manufactured on a very high speed bipolar process which
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SL2363C
SL2364C
SL2363C
SL2364C
SL2363
SL2364
200mW
dilmon
CM10
6 "transistor arrays" ic
transistor package- max ratings of T05
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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dilmon
Abstract: No abstract text available
Text: GEC P L E S S E Y S i S I M I < <> \ I < l 1 l> H ADVANCE INFORMATION S DS 3305-2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a
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SL2364
SL2364
SL2364C
37bfl52E
200mW
37bfl522
0D21D70
dilmon
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2SB1123
Abstract: 2sd1623
Text: Ordering number: EN 1727B 2SB1123/2SD1623 N0.1727B PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features . Adoption of FBET, MBIT processes.
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1727B
2SB1123/2SD1623
2SB1123
250inm2
2sd1623
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN 1030E _ 2SB926/2SD1246 PNP/ NPN Epitaxial Planar Silicon Transistors Large-Current Driving Applications Applications • Power supplies, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes
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1030E
2SB926/2SD1246
2SB926
4077KI/2275MW/D282KI
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