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    TRANSISTORS MBI Search Results

    TRANSISTORS MBI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS MBI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30c53

    Abstract: 2SA1784 2SC4644 ITR04653
    Text: Ordering number:ENN3520 PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .


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    PDF ENN3520 2SA1784/2SC4644 VCEO400V) 2SA1784/2SC4644] 2SA1784 30c53 2SA1784 2SC4644 ITR04653

    ITR04653

    Abstract: 2SA1784 2SC4644
    Text: Ordering number:ENN3520 PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .


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    PDF ENN3520 2SA1784/2SC4644 VCEO400V) 2SA1784/2SC4644] 2SA1784 ITR04653 2SA1784 2SC4644

    2SA1784

    Abstract: 2SC4644 ITR04653
    Text: Ordering number:ENN3520 PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .


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    PDF ENN3520 2SA1784/2SC4644 VCEO400V) 2SA1784/2SC4644] 2SA1784 2SA1784 2SC4644 ITR04653

    smd marking BG

    Abstract: 2SB1124 br 39 SMD Bg marking
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1124 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Absolute Maximum Ratings Ta = 25 Parameter


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    PDF 2SB1124 -100mA smd marking BG 2SB1124 br 39 SMD Bg marking

    smd marking BJ

    Abstract: 2SB1302 BJ SMD IC
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1302 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. Very small size making it easy to provide highdensity,


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    PDF 2SB1302 -60mA smd marking BJ 2SB1302 BJ SMD IC

    2SB1121

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1121 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity,


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    PDF 2SB1121 -75mA 2SB1121

    wt smd

    Abstract: vebo Transistors marking WT SMD MARKING 2SC4694 WT SMD MARKING
    Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25


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    PDF 2SC4694 100mA wt smd vebo Transistors marking WT SMD MARKING 2SC4694 WT SMD MARKING

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25


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    PDF 2SC4694 100mA

    2SC5310

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC5310 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Large current capacitance. 0.55 Adoption of FBET, MBIT processes. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low collector-to-emitter saturation voltage.


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    PDF 2SC5310 OT-23 500mA 2SC5310

    MP14

    Abstract: SL2364C transistor 45 f 123 Monolithic Transistor Pair SL2364 6 "transistor arrays" ic Dual Long-Tailed Pair Transistor Array transistor array high speed
    Text: ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a monolithic integrated circuit manufactured on a very high


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    PDF SL2364 SL2364 SL2364C 200mW MP14 SL2364C transistor 45 f 123 Monolithic Transistor Pair 6 "transistor arrays" ic Dual Long-Tailed Pair Transistor Array transistor array high speed

    SL2364

    Abstract: Monolithic Transistor Pair
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a


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    PDF SL2364 SL2364 Monolithic Transistor Pair

    Monolithic Transistor Pair

    Abstract: dilmon mp14 SL2364 SL2364C Dual Long-Tailed Pair Transistor Array 6 "transistor arrays" ic
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a


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    PDF SL2364 SL2364 200mW Monolithic Transistor Pair dilmon mp14 SL2364C Dual Long-Tailed Pair Transistor Array 6 "transistor arrays" ic

    SL2364C

    Abstract: Dual Long-Tailed Pair Transistor Array Monolithic Transistor Pair SL2364 MP14
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a


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    PDF SL2364 SL2364 SL2364C Dual Long-Tailed Pair Transistor Array Monolithic Transistor Pair MP14

    2SC6043

    Abstract: No abstract text available
    Text: 2SC6043 Ordering number : ENN8326 2SC6043 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process.


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    PDF 2SC6043 ENN8326 2SC6043

    2SB1205

    Abstract: 2SB1143 2sc4675
    Text: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.


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    PDF 2SB764/2SD863 2SB892/2SD1207* 2SB927/2SD1247* 2SB985/2SD1347* 2SB1131* 2SD1145 2SA1641/2SC4306* 2SB1201/2SD1801* 2SB1202/2SD1802* 2SB1203/2SD1803* 2SB1205 2SB1143 2sc4675

    NPN POWER TRANSISTOR 2SD1878

    Abstract: transistor 2sD1880 D1879 sd1878
    Text: SAXYO TRANSISTO RS FOR CRT DISPLAY VIDEO O U TPUT A P PLICATIONS Transistors for High~Definition Monitor TV Applications Transistors for Video Output Applications The use of new technology, FBET Fold-Back Electrode Transistor and MBIT (Multi-Base Island Transistor), that are


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    PDF 50MHz. MT921226TR NPN POWER TRANSISTOR 2SD1878 transistor 2sD1880 D1879 sd1878

    Diode 1525

    Abstract: 2SC4769 to220ml
    Text: s tu m Transistors for Very H igh~Definition CRT Display Horizontal Deflection Output Use 1 Transistors for CRT horizontal deflection output use must be of high-breakdown voltage, high-current, high-speed switching type to provide higher frequency. We have the following lineup of transistors for various uses.


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    PDF 2SC3591 2SC4478 2SC444C 2SC4441 2SC3636 2SC3637 2SC3638 2SC3642 2SC3643 2SC3644 Diode 1525 2SC4769 to220ml

    Untitled

    Abstract: No abstract text available
    Text: SAMtYO TRANSISTORS FOR CRT DISPLAY VIDEO OUTPUT APPLICATIONS Transistors for High-Definition Monitor TV Applications Transistors for V i d e o O u t p u t A p p l i c a t i o n s Th e use of n e w te ch nology, e n t i r e l y or ig in al This makes FB ET


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    PDF 50MHz. S30617TR

    SL2364

    Abstract: SL2364C 6 "transistor arrays" ic transistor package- max ratings of T05 Monolithic Transistor Pair CM10 SL2363C dilmon
    Text: SL2363C & SL2364C VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to form a dual long-tailed pair with tail transistors, They are monolithic integrated circuits manufactured on a very high speed bipolar process which


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    PDF SL2363C SL2364C SL2363C SL2364C SL2363 SL2364 200mW 6 "transistor arrays" ic transistor package- max ratings of T05 Monolithic Transistor Pair CM10 dilmon

    SL2363C

    Abstract: dilmon CM10 SL2364 SL2364C 6 "transistor arrays" ic transistor package- max ratings of T05
    Text: SL2363C & SL2364C VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to form a dual long-tailed pair with tail transistors. They are monolithic integrated circuits manufactured on a very high speed bipolar process which


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    PDF SL2363C SL2364C SL2363C SL2364C SL2363 SL2364 200mW dilmon CM10 6 "transistor arrays" ic transistor package- max ratings of T05

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    dilmon

    Abstract: No abstract text available
    Text: GEC P L E S S E Y S i S I M I < <> \ I < l 1 l> H ADVANCE INFORMATION S DS 3305-2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a


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    PDF SL2364 SL2364 SL2364C 37bfl52E 200mW 37bfl522 0D21D70 dilmon

    2SB1123

    Abstract: 2sd1623
    Text: Ordering number: EN 1727B 2SB1123/2SD1623 N0.1727B PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features . Adoption of FBET, MBIT processes.


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    PDF 1727B 2SB1123/2SD1623 2SB1123 250inm2 2sd1623

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN 1030E _ 2SB926/2SD1246 PNP/ NPN Epitaxial Planar Silicon Transistors Large-Current Driving Applications Applications • Power supplies, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes


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    PDF 1030E 2SB926/2SD1246 2SB926 4077KI/2275MW/D282KI