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    TRANSISTORS 2N3055 Search Results

    TRANSISTORS 2N3055 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS 2N3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UJT 2n3904

    Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
    Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24


    Original     		PDF

    DIAC DB2

    Abstract: BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF
    Text: Quick Reference Data Wafer Fabrication Surface Mounted Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors Power Transistors


    Original     		PDF C-120 OT-23 OT23-6L DO-213AB DO-214AC DO-214AA OT-223 O-252 DIAC DB2 BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF

    MJ15015

    Abstract: 2N3055A MJ15016 MJ15015G MJ15015 application note 2N3055AG MJ15016G 1N6073 2N3055 DC variable power with 2n3055
    Text: 2N3055A NPN MJ15015, MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


    Original     		PDF 2N3055A MJ15015, MJ15016 MJ15015 MJ15016 2N3055. 2N3055A/D 2N3055A MJ15015G MJ15015 application note 2N3055AG MJ15016G 1N6073 2N3055 DC variable power with 2n3055

    MJ15015 TRANSISTOR REPLACEMENT GUIDE

    Abstract: MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 2N3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power


    Original     		PDF 2N3055 MJ2955. 2N3055A MJ15015* MJ2955A MJ15016* TIP73B TIP74 TIP74A TIP74B MJ15015 TRANSISTOR REPLACEMENT GUIDE MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051

    mj150* darlington

    Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
    Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35


    Original     		PDF 2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp

    MJ15015

    Abstract: 2n3055a datasheet 2n3055AG MJ15016 MJ15015 TRANSISTOR MJ15015G MJ15015 application note 1N6073 2N3055 2N3055AG
    Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


    Original     		PDF 2N3055A MJ15015 MJ15016 MJ15015 MJ15016 2N3055. 2N3055A/D 2n3055a datasheet 2n3055AG MJ15015 TRANSISTOR MJ15015G MJ15015 application note 1N6073 2N3055 2N3055AG

    Untitled

    Abstract: No abstract text available
    Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


    Original     		PDF 2N3055A MJ15015 MJ15016 MJ15015 MJ15016 2N3055. 2N3055A/D

    MJ15016

    Abstract: 2N3055AG MJ15015 2N3055A MJ15015G MJ15016G 2N3055 NPN Transistor 2N3055 2N3055A 2n3055 MJ-15016
    Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


    Original     		PDF 2N3055A MJ15015 MJ15016 MJ15015 MJ15016 2N3055. O-204AA 2N3055AG 2N3055A MJ15015G MJ15016G 2N3055 NPN Transistor 2N3055 2N3055A 2n3055 MJ-15016

    2N3055

    Abstract: hfe 2n3055 2N3055 ST 2N3055 schematic diagram MJ2955 ST 2N3055 2N3055 MJ2955 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier
    Text: 2N3055 MJ2955 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 1 2 Description The devices are manufactured in epitaxial-base


    Original     		PDF 2N3055 MJ2955 2N3055 JESD97. hfe 2n3055 2N3055 ST 2N3055 schematic diagram MJ2955 ST 2N3055 2N3055 MJ2955 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier

    2N3055

    Abstract: 2n3055 malaysia MJ2955 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
    Text: 2N3055 MJ2955 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 1 2 Description The devices are manufactured in epitaxial-base


    Original     		PDF 2N3055 MJ2955 2N3055 2n3055 malaysia MJ2955 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955

    mje15033 replacement

    Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver


    Original     		PDF 2N3055 2N6576 2N6577 2N6578 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement

    2n3055 malaysia

    Abstract: Mj2955
    Text: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors Applications • General purpose 1 • Audio amplifier 2 Description TO-3 Figure 1.


    Original     		PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 malaysia Mj2955

    BU326

    Abstract: BU108 transistor BU 110 BDX54 2SC1943 2SD80 MJ15021 "cross reference" MJE2482 2SD675 2N3055A 2n3055
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ15015, MJ15016 See 2N3055A Advance Information NPN MJ15018 Complementary Silicon Power Transistors MJ15020* PNP MJ15019 . . . designed for use as high frequency drivers in Audio Amplifiers. • High Gain Complementary Silicon Power Transistors


    Original     		PDF MJ15015, MJ15016 2N3055A) MJ15018 MJ15020* MJ15019 MJ15021* TIP73B TIP74 TIP74A BU326 BU108 transistor BU 110 BDX54 2SC1943 2SD80 MJ15021 "cross reference" MJE2482 2SD675 2N3055A 2n3055

    2n3055

    Abstract: 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 MJ2955 300 watts amplifier
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc


    Original     		PDF 2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier

    2N3055

    Abstract: MJ2955 mj15015 MJ15016 MJ2955 mexico 1N6073 2N3055A MJ2955A
    Text: ON Semiconductort NPN 2N3055A Complementary Silicon High-Power Transistors MJ15015 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


    Original     		PDF 2N3055A MJ15015 2N3055 MJ2955. MJ2955A MJ15016 r14525 2N3055A/D MJ2955 mj15015 MJ15016 MJ2955 mexico 1N6073 2N3055A MJ2955A

    2n3055

    Abstract: mj2955 ST 2n3055
    Text: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors s ct Applications • Audio amplifier 2 r P e Description TO-3 Figure 1. u d o


    Original     		PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 mj2955 ST 2n3055

    power transistors cross reference

    Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
    Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products


    Original     		PDF MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE

    mj10016

    Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,


    Original     		PDF MJ10015 MJ10016 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent

    MJ15016

    Abstract: 2n3055a MJ15015 2N3055 NPN Transistor
    Text: ON Semiconductort NPN 2N3055A Complementary Silicon High−Power Transistors MJ15015 * PNP MJ15016 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


    Original     		PDF 2N3055. 2N3055A MJ15015 MJ15016 2N3055A MJ15015, MJ15015 MJ15016 2N3055 NPN Transistor

    2N3055G

    Abstract: MJ2955 2n3055 200 watts amplifier diagram MJ2955G OF transistor 2n3055 to-3 package MJ-20 TO-204AA transistor 2N30 2N3055 MJ2955 transistor npn 2n3055g
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −


    Original     		PDF 2N3055 MJ2955 O-204AA 2N3055G MJ2955 2n3055 200 watts amplifier diagram MJ2955G OF transistor 2n3055 to-3 package MJ-20 TO-204AA transistor 2N30 transistor npn 2n3055g

    mj15015g

    Abstract: No abstract text available
    Text: 2N3055AG NPN , MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


    Original     		PDF 2N3055AG MJ15015G MJ15016G 2N3055. 2N3055AG MJ15015G, MJ15016G 2N3055A/D mj15015g

    2N3055* motorola

    Abstract: mj15016 motorola 2n3055 motorola 1N6073 2N3055 2N3055A MJ15015 MJ15016 MJ2955 MJ2955A
    Text: MOTOROLA Order this document by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power


    Original     		PDF 2N3055A/D 2N3055A MJ15015* 2N3055 MJ2955. MJ2955A MJ15016* 2N3055A/D* 2N3055* motorola mj15016 motorola 2n3055 motorola 1N6073 2N3055A MJ15015 MJ15016 MJ2955 MJ2955A

    1N6073

    Abstract: 2N3055 2N3055A MJ15015 MJ15016 2N3055A-D 2N30
    Text: ON Semiconductort NPN 2N3055A Complementary Silicon High-Power Transistors MJ15015 * PNP MJ15016 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


    Original     		PDF 2N3055A MJ15015 MJ15016 2N3055. r14525 2N3055A/D 1N6073 2N3055 2N3055A MJ15015 MJ15016 2N3055A-D 2N30

    2n3055a

    Abstract: mj15015 3055a MJ15016 MJ15015 TRANSISTOR MJ-15015
    Text: MOTOROLA Order this document by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA I I D Complementary Silicon High-Power Transistors 2N3055A . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power


    OCR Scan     		PDF 2N3055A/D 2N3055 MJ2955. 2N3055A J15015* MJ2955A J15016* mj15015 3055a MJ15016 MJ15015 TRANSISTOR MJ-15015