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    TRANSISTOR Z4 51 Search Results

    TRANSISTOR Z4 51 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Z4 51 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor z3

    Abstract: TRANSISTOR Z4
    Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-max


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    PDF RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor z3 TRANSISTOR Z4

    TRANSISTOR Z4

    Abstract: transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z4 51 transistor z3 rt230pd IRF 1470
    Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max


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    PDF RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 TRANSISTOR Z4 transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z4 51 transistor z3 IRF 1470

    transistor C4

    Abstract: No abstract text available
    Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max


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    PDF RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor C4

    MRF644

    Abstract: MOTOROLA 381 equivalent NPN TRANSISTOR Z4 TRANSISTOR J214
    Text: MOTOROLA Order this document by MRF644/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line MRF644 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.


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    PDF MRF644/D MRF644 MRF644 MRF644/D* MRF644/D MOTOROLA 381 equivalent NPN TRANSISTOR Z4 TRANSISTOR J214

    transistor z9

    Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
    Text: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package


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    PDF RT240PD 40dBm 14GHz 900MHz IMT-2000 RT240PD IMT-2000, 14iminary transistor z9 transistor Z2 cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF

    MRF644

    Abstract: TRANSISTOR Z4 VK200 MOTOROLA 381 equivalent
    Text: MOTOROLA Order this document by MRF644/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF644 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.


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    PDF MRF644/D MRF644 MRF644/D* MRF644 TRANSISTOR Z4 VK200 MOTOROLA 381 equivalent

    MRF653

    Abstract: MRF653 circuit test
    Text: MOTOROLA Order this document by MRF653/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF653 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics


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    PDF MRF653/D MRF653 MRF653 MRF653 circuit test

    MRF641

    Abstract: 104B
    Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.


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    PDF MRF641/D MRF641 MRF641/D* MRF641 104B

    case 244-04

    Abstract: z3c8
    Text: MOTOROLA Order this document by MRF652/D SEMICONDUCTOR TECHNICAL DATA MRF652 Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics


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    PDF MRF652/D MRF652 MRF652 MRF652/D MRF652/D* case 244-04 z3c8

    mrf641

    Abstract: 1117 ADC
    Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.


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    PDF MRF641/D MRF641 mrf641 1117 ADC

    MOTOROLA 381 equivalent

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.


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    PDF MRF641/D MRF641 MRF641 MRF641/D MOTOROLA 381 equivalent

    mrf338 data sheet

    Abstract: MRF338 VK200
    Text: MOTOROLA Order this document by MRF338/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF338 Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics


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    PDF MRF338/D MRF338 mrf338 data sheet MRF338 VK200

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF338/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor MRF338 Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics


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    PDF MRF338/D MRF338 MRF338 MRF338/D

    CRITCHLEY 9003

    Abstract: siemens CNY17-2 TE 2161 CRITCHLEY 9004 BS6317 "Critchley 9003 Critchley step down transformer winding ratio critchley label Critchley transformers
    Text: ICs for Communications Analog Line Interface with the ARCOFI -BA PSB 2161 Application Note 06.96 PSB 2161 Revision History: Current Version: 06.96 Previous Version: Page Page in previous (in current Version Version) Subjects (major changes since last revision)


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    PDF BS6305; BS6317 B11-11 CRITCHLEY 9003 siemens CNY17-2 TE 2161 CRITCHLEY 9004 "Critchley 9003 Critchley step down transformer winding ratio critchley label Critchley transformers

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


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    PDF MMRF1021N MMRF1021NT1

    imd 5210

    Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


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    PDF MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL

    100B270JCA500X

    Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


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    PDF MRF282SR1 MRF282ZR1 100B270JCA500X 100B390JCA500X 100B201JCA500X GX03005522 MRF282

    microstrip

    Abstract: microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier


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    PDF MRF282SR1 MRF282ZR1 microstrip microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS

    100B201JT500XT

    Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


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    PDF MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz


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    PDF RT233 50MHz 33dBm 36dBm 900MHz IMT-2000 WP-22 RT233 IMT-2000,

    vk-200 ferrite choke

    Abstract: MRF641 transistor z4 n Allen-Bradley schematic transistor z5
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics —


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    PDF 16-Volt MRF641 vk-200 ferrite choke transistor z4 n Allen-Bradley schematic transistor z5

    transistor z5

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF653 Designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics


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    PDF MRF653 MRF653 transistor z5

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Voll UHF large-signal am plifier applications in industrial and com mercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics —


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    PDF MRF641

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ran sistor . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics —


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    PDF 16-Volt MRF641