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    TRANSISTOR Y K 425 Search Results

    TRANSISTOR Y K 425 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Y K 425 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LXY Series

    Abstract: mitsubishi microcomputers 4-bit 20P2N-A M34250E2FP M34250E2-XXXFP M34250M2 M34250M2-XXXFP PU01 f1813
    Text: MITSUBISHI MICROCOMPUTERS 4250 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4250 Group is a 4-bit single-chip microcomputer designed with CMOS technology. Its CPU is that of the 720 series using a simple instruction set. The computer is equipped with one 8-bit


    Original     		PDF KI-9711 LXY Series mitsubishi microcomputers 4-bit 20P2N-A M34250E2FP M34250E2-XXXFP M34250M2 M34250M2-XXXFP PU01 f1813

    BLP05M7200

    Abstract: No abstract text available
    Text: BLP05M7200 Power LDMOS transistor Rev. 1 — 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425 MHz to 450 MHz. Table 1.


    Original     		PDF BLP05M7200 2002/95/EC, BLP05M7200

    AED02902

    Abstract: No abstract text available
    Text: Low Drop Voltage Tracker TLE 4251 Features • • • • • • • • • Output tracking tolerance ≤ ±0.2% 400 mA output current capability Enable Function Very low current consumption in OFF mode Wide operation range: up to 40 V Wide temperature range: -40 °C ≤ Tj ≤ 150 °C


    Original     		PDF P-TO252-5-1 P-TO252-5-1. AED02902

    Untitled

    Abstract: No abstract text available
    Text: BLP05M7200 Power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425 MHz to 450 MHz. Table 1.


    Original     		PDF BLP05M7200

    PMEG2020EA

    Abstract: smps repair circuit TEA1620P 40V NPN embedded package TEA1622 pecl clock so8 30v 3a schottky barrier type rectifiers TEA1623P smps repair smd transistor bq
    Text: New MultiMarket Products Quarterly highlights Semiconductors VOLUME 3 • ISSUE 2 M AY 2 0 0 4 ■ In this issue: Welcome to the latest issue of Philips’ New MultiMarket Products – Quarterly highlights. P 1 PCK12429 25 - 400 MHz differential PECL clock generator


    Original     		PDF PCK12429 PBSS5540X PCK111/PCK210/PCKEL14/PCKEP14 TDA9965A PMEG2020EA smps repair circuit TEA1620P 40V NPN embedded package TEA1622 pecl clock so8 30v 3a schottky barrier type rectifiers TEA1623P smps repair smd transistor bq

    Untitled

    Abstract: No abstract text available
    Text: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,


    OCR Scan     		PDF 2SK1123

    Untitled

    Abstract: No abstract text available
    Text: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8


    OCR Scan     		PDF CEN-A44 CEN-A45 CEN-A45A CEN-A44, EN-A45 MPS-A44, MPS-A45 100mA

    ME0412

    Abstract: 8822 TRANSISTOR me0411 ME0413 20MHZ 4102 transistor ME4103
    Text: SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO ELECTRONICS FEATURES • H ig h G a i n h p g . 1 0 0 - 6 0 0 • E x c e lle n t L i n e a r i t y F ro m lO ^ A • H ig h B re a k d o w n V o l t a g e B V


    OCR Scan     		PDF 60Vmin ME0411 ME0412 ME0413 200mW 425mW 8822 TRANSISTOR ME0413 20MHZ 4102 transistor ME4103

    yx 861

    Abstract: zener FR diode 2ao2 diode BAND
    Text: n 1. v ï — v - n Package List m Discrete Semiconductor Devices — □ - V 'à •+- I "N « A te irv u m « -£ o K S *- « > fa’ V •fr -w Panasonic - 219 - il H Item S M ini 5-pin S M ini(4-pin) U n it mm 2 UP 1 .1 0 4251 -i 1 25 îO 1_ 0 425


    OCR Scan     		PDF LN1871 tN1371GC6- LN1371 yx 861 zener FR diode 2ao2 diode BAND

    m28 transistor

    Abstract: 2SC2340 NE56900 NE56953E NE56954 NE56987 S21E
    Text: N E C / .CALIFORNIA 1SE D N E ' H b427414 DQ01331 3 NE56900 NE56953E NE56954 NE56987 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • A M P L IF IE R P E R F O R M A N C E : 550 mW with 11.5 d B Gain at 2 GHz 425 mW with 7.5 d B Gain at 4 G H z


    OCR Scan     		PDF b427414 NE56900 NE56953E NE56954 NE56987 NE569 NE56987 m28 transistor 2SC2340 S21E

    transistor T K 2056

    Abstract: K 2056 transistor transistor K 2056
    Text: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage


    OCR Scan     		PDF SS2SC4271 T0126 300mA, 100mA) SS2SC4272 1S-126A IS-20MA transistor T K 2056 K 2056 transistor transistor K 2056

    SOT103

    Abstract: BFR591 transistor SOT103 transistor 1038 SOT-103 BFR59 NPN planar RF transistor transistor k 425
    Text: Philips Semiconductors Preliminary specification " NPN 8 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES • BFR591 711Qfi2b ÜOM5Sfll 425 H P H I N PINNING High power gain PIN • Low noise figure • SbE 7 =3 3 -0 5 1 High transition frequency • Gold metallization ensures


    OCR Scan     		PDF BFR591 7110fl2fc, BFR591 OT103 USB037 OT103. IS21I* SOT103 transistor SOT103 transistor 1038 SOT-103 BFR59 NPN planar RF transistor transistor k 425

    Helipot

    Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
    Text: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used


    OCR Scan     		PDF MIL-S-19500/425 JAN2N5431, JANTX2N5431 pulse-repe0/425 MIL-S-19500, MIL-S-19500 Helipot JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note

    0.2MF CAPACITOR

    Abstract: TIL111 equivalent til111 DI-425
    Text: D DIONICS INC. DI-425 65 RU SH M O RE S T R E E T W EST B U R Y , NEW Y O R K 11590 5161 997-7474 HIGH VOLTAGE Dl 425 SW ITC H ED A.C. B R ID G E C IR C U IT Monolithic Silicon Dielectrically Isolated Integrated Circuits The Dl 425 is a high voltage, monolithic dielec­


    OCR Scan     		PDF DI-425 0.2MF CAPACITOR TIL111 equivalent til111 DI-425

    L3317

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r: E 42589 CMOS LEI F SA\YO I LC7365N, 7366N N a2SB y L i D T M F T o n e G e n e r a to r fo r P u s h b a tto n T e le p h o n e T h e LC 7 3 G 5 N , 73G6N ere D T M F lone g en erato r L S t s for use in pushbuLton telephones. T h e LC 73G 5N con tains * k eyb o ard scan c irc u it Bnd the L C 7 3 S 6 N c a n d ire c t accept the Output from 0


    OCR Scan     		PDF LC7365N, 7366N 73G6N L3317

    2N4256

    Abstract: 2N4425 NPN, PNP for 500ma, 30v 2b0-b 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N 4256 2N4424 2N 4425 N PN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N32mA, NPN, PNP for 500ma, 30v 2b0-b 2N5305

    ST2165

    Abstract: No abstract text available
    Text: C î'ii SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB866N51/OPB866N55 PACKAGE DIMENSIONS SEE NOTE 3 125 3.18 OPTICAL CENTERLINE .345 (8.78) I_ -.4 85 (12.32) r .110 (2.79) ft .425 (1 0.al) MIN i~~r .425 (10.79) ^ PIN 1 IDENTIFICATION 220 (5.59) DESCRIPTION


    OCR Scan     		PDF OPB866N51/OPB866N55 OPB866N OPB866N51 OPB866N55 ST2165

    Untitled

    Abstract: No abstract text available
    Text: 375Vin / 48Vout / 600Watts DC-DC Converter Module Model Number V375A48C600A Features • • • • • • • • • • • DC input range: 250 - 425V Input surge withstand: 550V for 100ms DC output: 48V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load


    OCR Scan     		PDF 375Vin 48Vout 600Watts 100ms 20W/cubic V375A48C600A

    Untitled

    Abstract: No abstract text available
    Text: 375Vin / 28Vout / 600Watts DC-DC Converter Module Model Number V375A28C600A Features • • • • • • • • • • • DC input range: 250 - 425V Input surge withstand: 550V for 100ms DC output: 28V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load


    OCR Scan     		PDF 375Vin 28Vout 600Watts 100ms 20W/cubic V375A28C600A

    BCM 4359

    Abstract: transistor 4287 AB transistor 3901
    Text: 6091788 MICRO ELECTRONICS CORJP_ ña 82D 006^8 DEI bCm 7flfl D 7^* D 0 0 Gb 4 fl □ "7 J " TYPE V C E SA T FE C ASE Pd (mW) 'c (mA) V CEO (V) min max 'c (mA) max (V) ‘c (mA) fT min (MHz) Cob N.F. max max (pF) (dB) 3694 4249 4250 5138 N P P P T O -92A


    OCR Scan     		PDF O-237 MELF-002, MELF006 L0T17aa O-181LOW BCM 4359 transistor 4287 AB transistor 3901

    Untitled

    Abstract: No abstract text available
    Text: 375Vin / 5Vout / 400Watts DC-DC Converter Module Model Number V375A5C400A Features • • • • • • • • • • • DC input range: 250 - 425V Input surge withstand: 550V for 100ms DC output: 5V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load


    OCR Scan     		PDF 375Vin 400Watts 100ms V375A5C400A

    Untitled

    Abstract: No abstract text available
    Text: 375Vin / 28Vout / 600Watts DC-DC Converter Module Features • DC input range: 250 - 425V • Input surge withstand: 550V for 100ms • DC output: 28V • Programmable output: 10 to 110% • Regulation: ±0.2% no load to full load • Efficiency: 89% • Maximum operating temperature:


    OCR Scan     		PDF 375Vin 28Vout 600Watts 100ms 20W/cubic V375A28C600A L9088

    Untitled

    Abstract: No abstract text available
    Text: 375Vin / 5Vout / 400Watts DC-DC Converter Module Features • DC input range: 250 - 425V • Input surge withstand: 550V for 100ms • DC output: 5V • Programmable output: 10 to 110% • Regulation: ±0.2% no load to full load • Efficiency: 83.5% • Maximum operating temperature:


    OCR Scan     		PDF 100ms 20W/cubic 375Vin 400Watts V375A5C400A

    N13634

    Abstract: No abstract text available
    Text: 375Vin / 24Vout / 600Watts DC-DC Converter Module Model Number V375A24C600A Features • • • • • • • • • • • DC input range: 250 - 425V Input surge withstand: 550V for 100ms DC output: 24V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load


    OCR Scan     		PDF 375Vin 24Vout 600Watts 100ms 20W/cubic V375A24C600A N13634