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    TRANSISTOR W 4 Search Results

    TRANSISTOR W 4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR W 4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CMPT491E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT491E type is an Enhanced version of the industry standard 491 NPN silicon transistor. This device is manufactured by the


    Original     		PDF CMPT491E CMPT491E OT-23 CMPT591E 500mA 100MHz 27-January

    TRANSISTOR S 838

    Abstract: 339 marking code transistor TR13 339 marking code transistor manual
    Text: Package Details DPAK Transistor Case Mechanical Drawing Part Marking: Full Part Number Mounting Pad Geometry Dimensions in mm R3 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details DPAK Transistor Case Tape Dimensions and Orientation (Dimensions in mm)


    Original     		PDF EIA-481-2-A TRANSISTOR S 838 339 marking code transistor TR13 339 marking code transistor manual

    BC450

    Abstract: No abstract text available
    Text: BC450 PNF SILICON TRANSISTOR « w w w w w w iw iw iw im m w w w w w n n n n n n n n n n n w iw iw iw iw iw w w w w w w w w w w w in n í^ ^ DESCRIPTION P4.68CÛ.18J BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly


    OCR Scan     		PDF BC450 300mA 625mW 100mA 100MHz 300/iS.

    Untitled

    Abstract: No abstract text available
    Text: FF 400 R 06 KL 2 Thermal properties Therm ische Eigenschaften 0,0345°C/W DC, pro Baustein / per module 0,069 °C/W DC, pro Zweig / per Arm 0,02 °C/W pro Baustein / per module 0,04 °C/W pro Zweig / per Arm Transistor Transistor Elektrische Eigenschaften


    OCR Scan     		PDF 3HQ32W

    Untitled

    Abstract: No abstract text available
    Text: FF 400 R 06 KL 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Thermal properties 0,0345°C/W 0,069 °C/W 0,02 °C/W 0,04 °C/W DC, pro B a u ste in /p e r module DC, pro Zweig /p e r Arm pro Baustein / per module Electrical properties


    OCR Scan     		PDF PWWR60CKF6

    1BW TRANSISTOR

    Abstract: No abstract text available
    Text: 7=3 4’ 3 / FF 75 R 06 KF EUPEC S5E 34035^7 Rthjc Elektrische Eigenschaften 00Q 02G 5 Thermische Eigenschaften Transistor Transistor D Electrical properties RthCK 1 b 1! MUREC Thermal properties 0,175 °C/W 0,35 °C/W 0,06 °C/W 0,12 °C/W DC, pro Baustein / per module


    OCR Scan     		PDF 00Q02G5 34D32CI7 1BW TRANSISTOR

    FF150

    Abstract: No abstract text available
    Text: FF 150 R 06 KF 3 Thermische Eigenschaften Transistor Transistor R th jc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 600 V 150 A 0,08 CC/W 0,16 °C/W 0,03 C/W 0,06 °C/W 150 °C - 4 0 / + 150 °C - 40 / + 125 °C


    OCR Scan     		PDF FF150 34032T7

    W05BE

    Abstract: 2-32B1C
    Text: TOSHIBA MP4507 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4507 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE. LOAD SWITCHING


    OCR Scan     		PDF MP4507 W05BE 2-32B1C

    MCT8 opto

    Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
    Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR


    OCR Scan     		PDF MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35

    Untitled

    Abstract: No abstract text available
    Text: MP4513 TOSHIBA TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP451 3 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF MP4513 MP451

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MP4021 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4021 HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.


    OCR Scan     		PDF MP4021 100/is^

    Untitled

    Abstract: No abstract text available
    Text: MP4013 TOSHIBA TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP401 3 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm SWITCHING.


    OCR Scan     		PDF MP4013 MP401

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MP4504 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4504 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE INDUSTRIAL APPLICATIONS Unit in mm 31.5 ±0.2 LOAD SWITCHING.


    OCR Scan     		PDF MP4504

    7400A

    Abstract: 0200C
    Text: FF 400 R 06 KF 3 Therm ische Eigenschaften Thermal properties Rthjc DC, pro B austein/p e r module 0,0345°C/W DC, pro Zweig / per am 0,0690°C/W RthCK pro Baustein/p e r module 0,0200°C/W pro Zweig /p e r arm 0,0400°C/W Transistor Transistor Elektrische Eigenschaften


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TOSHIBA PO W ER TRANSISTOR M ODULE MP4503 SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4503 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF MP4503

    Untitled

    Abstract: No abstract text available
    Text: MP4301 TOSHIBA TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 M PZL 3 n 1 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.


    OCR Scan     		PDF MP4301 P4301

    FZ 300 R 06 KL

    Abstract: No abstract text available
    Text: FF 400 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V cE S Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,0345°C/W DC, pro Z w e ig /p e r arm


    OCR Scan     		PDF FFUHJR06KF FFUMR06 FZ 300 R 06 KL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MP4303 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 M P 4 3 fl 3 • v ■ ■ ■ v w mm HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD


    OCR Scan     		PDF MP4303

    Untitled

    Abstract: No abstract text available
    Text: MP4020 T O SH IB A TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4020 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.


    OCR Scan     		PDF MP4020

    Untitled

    Abstract: No abstract text available
    Text: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values


    OCR Scan     		PDF 00R600KF3 34G3SR7

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MP4305 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 M Pa i n ç • V ■ ■ ■ V w MT HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD


    OCR Scan     		PDF MP4305

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MP4507 TOSHIBA PO W ER TRANSISTOR M OD ULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4507 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE. LOAD SWITCHING


    OCR Scan     		PDF MP4507

    Untitled

    Abstract: No abstract text available
    Text: FZ 400 R 12 KL Transistor Thermische Eigenschaften Transistor RthJC Elektrische Eigenschaften Thermal properties DC, pro Baustein / per module 0,052 °C/W pro Baustein / per module 0,03 Electrical properties °C/W Maximum rated values V cES 1200 V 400 A Ic


    OCR Scan     		PDF

    L33 TRANSISTOR

    Abstract: transistor L33 FA1A4M 1A4M
    Text: DATA SHEET |\J P C " / SILICON TRANSISTOR FA1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS FEATURES » Resistors Built-in TY PE in millimeters W— 2 .8 ± 0.2 1.5 0.651c O— W V Ri -v w -4 * • - B 3- : ÒE


    OCR Scan     		PDF