TRANSISTOR TRW Search Results

TRANSISTOR TRW Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR TRW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DSP56300 Abstract: DSP56303 G38-87 AA0482 Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or	Original	PDF	DSP56303 AA0500 DSP56303/D DSP56300 G38-87 AA0482
Response AA0482 Abstract: AA0463 AA0470 AA0482 284 278 DSP56300 DSP56302 G38-87 AA-0481 AA0460 Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56302 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56302 specifications are preliminary and are from design simulations, and may not be fully tested or	Original	PDF	DSP56302 AA0500 DSP56302/D Response AA0482 AA0463 AA0470 AA0482 284 278 DSP56300 G38-87 AA-0481 AA0460
TRW53601 Abstract: No abstract text available Text: TRW53601 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE DESCRIPTION: The ASI TRW53601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz. FEATURES: • Diffused Ballast Resistors • Omnigold Metalization System • Common Emitter MAXIMUM RATINGS	Original	PDF	TRW53601 TRW53601
TRW54601 Abstract: No abstract text available Text: TRW54601 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI TRW54601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz. FEATURES: • Diffused Ballast Resistors • Omnigold Metalization System • Common Emitter	Original	PDF	TRW54601 TRW54601
TRW3005 Abstract: TRW300 Text: TRW3005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI TRW3005 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 4.5 dB min. at 5 W / 3,000 MHz	Original	PDF	TRW3005 TRW3005 TRW300
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan	PDF
Response AA0482 Abstract: 49/Response AA0482 Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this	OCR Scan	PDF	DSP56303 Response AA0482 49/Response AA0482
D1571 Abstract: AA0463 st cpcap zy 406 D157 DSP56300 DSP56301 G30-88 G38-87 series T212 data Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56301 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56301 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this	OCR Scan	PDF	DSP56301 AA0500 b3b72MA D1571 AA0463 st cpcap zy 406 D157 DSP56300 G30-88 G38-87 series T212 data
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF

trw RF POWER TRANSISTOR Abstract: trw rf transistor Text: T BFP181T/BFP181TW/BFP181 TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.	OCR Scan	PDF	BFP181T/BFP181TW/BFP181 BFP181TW BFP181TRW BFP181T 20-Jan-99 1-408-97echnical D-74025 trw RF POWER TRANSISTOR trw rf transistor
CA2850R Abstract: trw RF POWER TRANSISTOR ELECTRONIC BALLAST 236 trw rf transistor trw rf hybrid amp trw hybrid 100MHZ Text: JL T R ü ELEK CMPNT/ R F DË\| 0025054 GOOBTIO 4 \| RF Devices Division TRW Electronic Components Group T CA2850R - " 7 * - 0 9 - 0 1 CA2850RThin Film RF Linear Hybrid Amplifier All Gold Monometallic) Metallization System Featuring Gold Transistor Die with Diffused Emitter	OCR Scan	PDF	GOOHI10 CA2850R CA2850R 40dBm CA28S0R -32dB trw RF POWER TRANSISTOR ELECTRONIC BALLAST 236 trw rf transistor trw rf hybrid amp trw hybrid 100MHZ
Untitled Abstract: No abstract text available Text: TMS664414, TMS664814, TMS664164 64M-BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS69Q - DECEMBER 1996 High-Speed, L ow -N o ise Low-Voltage x 16 x 4 B a n k s 2M x 8 x 4 B a n k s Transistor-Transistor Logic LVTTL 4M x 4 x 4 B a n k s Interface 3.3-V P o w e r S u p p l y ( ± 1 0 % Toler ance)	OCR Scan	PDF	TMS664414, TMS664814, TMS664164 64M-BIT SMOS69Q
trw RF POWER TRANSISTOR Abstract: trw rf transistor TRW J03037 J03037 trw rf trw transistor trw J03037 RF POWER TRANSISTOR transistor TRW TRW POWER J0303 Text: 8825024 T R W ELEK CMPNT, DE \| ö f l 5 S 0 E 4 R F OODiaTti S RF Devices Division TRW Electronic Components Group T-33-13 J03037 U H F R F Power Transistor • 20:1 V S W R • Common Emitter • Isolated Package • Internally Matched • 37 Watts • 12.5 VCC	OCR Scan	PDF	T-33-13 J03037 470MHz 470MHz trw RF POWER TRANSISTOR trw rf transistor TRW J03037 J03037 trw rf trw transistor trw J03037 RF POWER TRANSISTOR transistor TRW TRW POWER J0303
trw RF POWER TRANSISTOR Abstract: trw rf transistor trw resistors trw rf semiconductors TRW MICROWAVE TRW2307 TRW CAP TRW2304 TRW 2003 transistor TRW Text: DE I RF Devices Division ôfl55GE4 0D035fl7 1 TRW Electronic Components Group 8825024 T R W ELEK CMPNT, R F 89D 03587 D TRW2307 Microwave Power Transistor • * • • • C o m m o n B a se G o ld M etalized H erm etic 1 to 3 G H z “T X ” Screenabie	OCR Scan	PDF	fl55G24 TRW2307 50j/F, TRW2304 50fjF, trw RF POWER TRANSISTOR trw rf transistor trw resistors trw rf semiconductors TRW MICROWAVE TRW2307 TRW CAP TRW2304 TRW 2003 transistor TRW
transistor 500v Abstract: 2SC3990 DDHD137 2247T Text: Ordering number : EN 2234C 2SC3990 N0.2234C NPN Triple Diffused P lanar Silicon Transistor SA\YO 500V/35A Switching Regulator Applications Features • High breakdown voltage, high reliability. • F ast switching speed. • WideASO. •Adoption of MBIT process.	OCR Scan	PDF	EN2234C 2234C 2SC3990 00V/35A 300ns Cut07b D05D13a transistor 500v 2SC3990 DDHD137 2247T
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	PDF	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Untitled Abstract: No abstract text available Text: DESCRIPTION FEATURES The 2690 is fabricated with double-poly nchannel silicon gate technology for high performance and high functional density. It uses a single transistor dynamic storage cell and dynamic circuitry to achieve high speed and low power dissipation.	OCR Scan	PDF	16-pin
TRW62601 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F 1ZE 0 I T -'33- 3 I b3fc,?2SM O G f l f l m S MOTOROLA SEMICONDUCTOR s e s : TECHNICAL DATA TRW62601 The RF Line M icrowave Power O scillator Transistor M ICROW AVE POW ER O SCILLATO R TR A N SISTO R . . . designed for use as power oscillators at frequencies to 3 GHz with typical output	OCR Scan	PDF	TRW62601 TRW62601
TRW63601 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F 12E D \| b3b725M 0000451 T -'b 'b -V l T \| MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW63601 The RF Line M ic ro w a v e P o w e r O s c illa to r T ra n s is to r MICROWAVE POWER OSCILLATOR TRANSISTOR . designed for use as power oscillators at frequencies to 3.5 GHz with guaranteed	OCR Scan	PDF	b3b725M TRW63601 TRW63601

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TRANSISTOR TRW Search Results

TRANSISTOR TRW Result Highlights (5)

TRANSISTOR TRW Datasheets Context Search

DSP56300

Response AA0482

TRW53601

TRW54601

TRW3005

2sb504

2N2222A 338

y51 h 120c

sx3704

Response AA0482

D1571

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

trw RF POWER TRANSISTOR

CA2850R

Untitled

trw RF POWER TRANSISTOR

trw RF POWER TRANSISTOR

transistor 500v

ksd 302 250v, 10a

Untitled

TRW62601

TRW63601