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    TRANSISTOR TOSHIBA K2611 Search Results

    TRANSISTOR TOSHIBA K2611 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TOSHIBA K2611 Datasheets Context Search

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    toshiba transistor k2611

    Abstract: K2611 toshiba K2611 transistor k2611 K2611 toshiba transistor Toshiba K2611 k2611 Transistor INFORMATION ON K2611 K261-1 k2611 a
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2611 toshiba transistor k2611 K2611 toshiba K2611 transistor k2611 K2611 toshiba transistor Toshiba K2611 k2611 Transistor INFORMATION ON K2611 K261-1 k2611 a PDF

    k2611

    Abstract: toshiba transistor k2611 transistor k2611 toshiba k2611 K2611 equivalent equivalent transistor k2611 2SK2611 INFORMATION ON K2611 K2611 toshiba SC-65
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2611 k2611 toshiba transistor k2611 transistor k2611 toshiba k2611 K2611 equivalent equivalent transistor k2611 2SK2611 INFORMATION ON K2611 K2611 toshiba SC-65 PDF

    K2611

    Abstract: toshiba transistor k2611 toshiba K2611 transistor k2611 K2611 toshiba k261 K2611 circuits 2sk2611 transistor transistor Toshiba K2611
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 1.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2611 K2611 toshiba transistor k2611 toshiba K2611 transistor k2611 K2611 toshiba k261 K2611 circuits 2sk2611 transistor transistor Toshiba K2611 PDF

    K2611

    Abstract: transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 2SK2611 k2611 Transistor
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2611 K2611 transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 2SK2611 k2611 Transistor PDF