BLW87
Abstract: No abstract text available
Text: Qs.is.s.u £s,mL- -onau.etoi O' , U na. c/ 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLW87 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW87 is Designed for Class C, 12.5 V High Band Applications
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BLW87
BLW87
10dBat25W/175MHz
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S12237-02P
Abstract: No abstract text available
Text: NEWS 01 2013 ELECTRON TUBE PRODUCTS PAGE 21 From Macro to Micro OPTO-SEMICONDUCTOR PRODUCTS Photo ICs for MOST 150 Optical Link PAGE 16 ELECTRON TUBE PRODUCTS Compact 2 W Xenon Flash Lamp Modules PAGE 25 SYSTEMS PRODUCTS Digital Camera ORCA-Flash4.0 PAGE 36
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PF0310A
Abstract: PF0144 Hitachi PF0030 HE8807CL Hitachi Industry Laser Diodes HL7806
Text: Reliability 1 Reliability 1.1 Reliability Data for CODEC LSIs T his sectio n d isc u sse s the re lia b ility d ata for Hitachi communication devices. Although current data is u sed , the rap id pace o f sem ico n d u cto r device development means new data may be added
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AF106
Abstract: 40HHZ AF108
Text: TG~l :-LTTT^- IT- 1-— - 5SC D m 0 2 3 S b Q S G G G H G 4 7 S « S I E G ; PNP Germanium RF Transistor SIEMENS A K T I E N G E S E L L S C H A F T . „ ~ T ' - l f - * ! ' A F 106 D - 04047 for input, mixer, and oscillator stages up to 260 MHz
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Q60106-X106
120ms
23SbOS
AF106
40HHZ
AF108
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transistor tic 106 N
Abstract: No abstract text available
Text: S AMSUNG ELECTRONICS INC 42E MPSA42 D B OQG^ObS 1 E3SMÚK NPN EPITAXIAL SILICON TRANSISTOR s 2r \ - \ s ' HIGH VOLTAGE TRANSISTOR • C o lle c to r-E m ltte r V oltage: VCEo =300V • C o lle c to r D is s ip a tio n : P 0 m a x = 6 2 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MPSA42
transistor tic 106 N
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vane air flow sensor
Abstract: alnico alnico 9
Text: APPLICATIONS INFORMATION THE HALL-EFFECT SENSOR The basic Hall sensor is simply a small sheet of sem iconductor m aterial. A constant voltage source forces a constant bias current to flow in the sem iconductor sheet. The output, a voltage m easured across the width of the sheet, reads near zero if a magnetic field is not
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TZ 1167
Abstract: bu208D U/25/20/TN26/15/850/TZ 1167
Text: MOTOROL A SC XSTRS/R 15E F D I b3b75SM □0ÜM7Tfl 3 | T -3 3 ^ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AM PERES NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAM PER DIO DE NPN SILICON POWER TRANSISTORS . . . specifically designed fo r use in large scree n color d eflection
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b3b75SM
TZ 1167
bu208D
U/25/20/TN26/15/850/TZ 1167
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3004x
Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23SbOS
0G04737
Q60206-X55
BFX55
23SbOS
150mA
3004x
SIEMENS B 58 451
GE 639 transistor
2114D
transistor bfx 73
STATIC RAM 2114
Q2114
tic 2116 M
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DB 22 AR transistor smd
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 -2 .0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and
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MRF6401
MRF6401PHT/D
IS21I
IS12I
DB 22 AR transistor smd
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107
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TIP100/101/102
TIP101
TIP102
TIP100
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3606 Transistor U n it in m m Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Applications -El- F e a tu re s • Low Noise Figure, High Gain • N F = 1 .1 d B , IS21el2 = 1 1 d B f = 1GHz -EE- A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )
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2SC3606
IS21el2
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transistor mj3001
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MJ2501/D SEMICONDUCTOR TECHNICAL DATA PNP MJ2501 NPN M edium -Pow er Com plem entary Silicon Transistors MJ3001 Motorola Preferred Devices . . . for use as output devices in complementary general purpose amplifier applica
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MJ2501/D
MJ2501
MJ3001
80EATING
O-204AA
transistor mj3001
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transistor tic 106 N
Abstract: bly power transistor transistor tic 226 transistor SE 431
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA D e sig n e r’s Data Sheet M GW 1 2 N 1 2 0 D Insulated G ate Bipolar Transistor with Anti-Parallel Diode Motorola Prafarrad Davlca N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -247 12 A @ 90 C 20 A @ 25 C
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2N5552
Abstract: No abstract text available
Text: -Jfotttron r a t y © ¥ @ Ä ¥ Ä 1L ® LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP N U M BER Devices. Inc NPN EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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203mm)
2N5552.
SDT06523,
SDT06623
2N5552
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transistor NEC D 822 P
Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters
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2SC4226
2SC4226
SC-70
2SC4226-T1
2SC4226-T2
transistor NEC D 822 P
transistor number D 2498
702 mini transistor
NEC D 822 P
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BLW10
Abstract: BLW40 mcd202 philips Film-dielectric Trimmer Capacitors 808 RF POWER TRANSISTOR NPN vhf sot120 LA 4451 philips Trimmer 60 pf QDST337 BLw vhf
Text: Philips Semiconductors M b b S B 1^ ! DTT • AP X Productspecification VHF power tr a n s is to r _ BLW40 AMER PHILIPS/DISCRETE b^E » FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
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BLW40
OT120
-SOT120
MBA451
BLW10
BLW40
mcd202
philips Film-dielectric Trimmer Capacitors 808
RF POWER TRANSISTOR NPN vhf
sot120
LA 4451
philips Trimmer 60 pf
QDST337
BLw vhf
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transistor ft 960
Abstract: smd transistor 2x5 tj3b 3b BLT81
Text: N AMER PHILIPS/DISCRETE fc.'ìE D bbS3^31 □ÜSÖ7S'i E71 B i APX _ rro u u m apwiHwm ivn i-iiiiip» ovm iconauciors BLT81 UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA
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BLT81
OT223
OT223
MBA451
MRC089
transistor ft 960
smd transistor 2x5
tj3b 3b
BLT81
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4-1070
Abstract: 45N10E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r T O -2 4 7 w ith Is o la te d M ounting H ole MTW45N10E M otorola Preferred Device TMOS POWER FET 45 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate
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EM- 546 motor
Abstract: 2N6545 2N6545 Motorola 2N6544
Text: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,
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b3b72S4
2N6545
EM- 546 motor
2N6545 Motorola
2N6544
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TI3028
Abstract: TI3027 TI-3027 TI-3028 TI3028 transistor T13027 T-13027 Germanium Transistor Texas Germanium Germanium power
Text: TYPES TI3027, TI3028 P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS 30 CD H m c< HIGH-POWER TRANSISTORS < i" 2 «m » for CONSUMER APPLICATIONS ££S so d <o«og 0 00 m echanical d a ta These transistors a re in a resistan ce -w elded , h e rm e tic a lly se a le d enclosure. The m ou n tin g b a se pro vid es
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TI3027,
TI3028
I3027
TI3028.
TI3027
TI-3027
TI-3028
TI3028 transistor
T13027
T-13027
Germanium Transistor
Texas Germanium
Germanium power
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Untitled
Abstract: No abstract text available
Text: HA13460FP— Preliminary Brushless DC Fan Motor Driver D e sc rip tio n P m A ssig n m e n t T he H A 1 3 4 6 0 F P is a tw o -p h ase h a lf-w a v e b ru sh less m o io r d river for 12-V and 2 4 -V fans. 1o Alarm { Revolution i— rat* output l _ Z F e a tu re s
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HA13460FPâ
HA13460FP
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KAG TRANSISTOR
Abstract: No abstract text available
Text: MOTOROLA IRF440 IRF441 TECHNICAL DATA IM-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V DSS rDS on •d IRF440 500 V 0.85 n 8.0 A T h e s e T M O S P o w e r FETs are d es ig n e d fo r high v o ltag e, high sp e ed p o w e r s w itch in g a p p licatio n s such as s w itch in g regulators,
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IRF440
IRF441
KAG TRANSISTOR
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transistor LT 5222
Abstract: transistor LT 5221 lt 5221 3503H
Text: f ïl H H A -5 2 2 1 /2 2 A R R I S Low Noise, W ideband Precision O perational Am plifier ju iy 1989 F e a tu re s A p p lic a tio n s • G ain B an d w id th P r o d u c t. 1 00M H z • • U nity G ain B an d w id th . 3 5M H z
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Untitled
Abstract: No abstract text available
Text: 6427525 N E C N E C ELECTRONICS INC 98D ELECTRONICS INC 1 fìfìfì7 n t.427S25 ODlflflflV 4 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK704 D E SC R IPTIO N The 2SK704 is N-Channel MOS Field Effect Power Transistor PACAKGE D IM EN SIO N S designed for solenoid, motor and lamp driver.
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427S25
2SK704
2SK704
T-39-11
10-Dram
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