Untitled
Abstract: No abstract text available
Text: KSA473 KSA473 Low Frequency Power Amplifier Power Regulator • Collector Current : IC= -3A • Collector Dissipation : PC = 10W TC=25°C • Complement to KSC1173 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSA473
KSC1173
O-220
Co220
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c1173Y
Abstract: C1173-Y TO220 Semiconductor Packaging C1173-O
Text: KSC1173 KSC1173 Low Frequency Power Amplifier Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W TC=25°C • Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSC1173
KSA473
O-220
KSC1173
O-220-3
KSC1173OTU
KSC1173YTSTU
KSC1173YTU
c1173Y
C1173-Y
TO220 Semiconductor Packaging
C1173-O
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KSA473
Abstract: No abstract text available
Text: KSA473 KSA473 Low Frequency Power Amplifier Power Regulator • Collector Current : IC= -3A • Collector Dissipation : PC = 10W TC=25°C • Complement to KSC1173 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSA473
KSC1173
O-220
KSA473
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Untitled
Abstract: No abstract text available
Text: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD73
O-220
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Untitled
Abstract: No abstract text available
Text: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD73
O-220
/new/html/KSD73
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Untitled
Abstract: No abstract text available
Text: GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features • VDS = 600 V RDS ON = 25 mΩ ID (Tc = 25°C) = 100 A hFE (Tc = 25°C) = 105 Package 225°C maximum operating temperature Gate Oxide Free SiC Switch
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GA50JT06-258
O-258
GA50JT06
00E-47
26E-26
3989E-9
026E-09
00E-3
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D2406 transistor
Abstract: D2406 2SD2406
Text: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SD2406
D2406 transistor
D2406
2SD2406
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Untitled
Abstract: No abstract text available
Text: GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1200 V 25 mΩ 100 A 95 Features • 250°C maximum operating temperature Gate Oxide Free SiC switch Exceptional Safe Operating Area
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GA50JT12-CAL
GA50JT12
00E-47
26E-28
398E-9
026E-09
00E-3
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Untitled
Abstract: No abstract text available
Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol
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MMBT2131T1
MMBT2132T1/T3)
AN569)
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B1557
Abstract: 2SB1557 2SD2386
Text: 2SB1557 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1557 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2386 Maximum Ratings (Tc = 25°C) Characteristics Symbol
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2SB1557
2SD2386
2-16C1A
B1557
2SB1557
2SD2386
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KSD288Y
Abstract: KSD288YTU
Text: KSD288 KSD288 Power Regulator Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO=80V • Collector Dissipation : PC=25W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD288
O-220
KSD288
KSD288Y
KSD288YTU
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Untitled
Abstract: No abstract text available
Text: KSD1944 NPN EPITAXIAL SILICON TRANSISTOR HIGHβ β POWER TRANSISTOR TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current TC=25°C Junction Temperature Storage Temperature
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KSD1944
O-220F
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Untitled
Abstract: No abstract text available
Text: KSA1614 KSA1614 Low Frequency Power Amplifier Power Regulator • Collector-Base Voltage : VCBO = - 80V • Collector Dissipation : PC=20W TC=25°C TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSA1614
O-220F
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h a 431 transistor
Abstract: transistor w 431 NPN Transistor TO220 VCEO 50v i 10A MJE13005 transistor TF 431 IC 431 TRANSISTOR a 1270 431 transistor
Text: DATA SHEET MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS TC=25°C unless otherwise noted SYMBOL
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MJE13005
O-220
MJE13005
O-220
h a 431 transistor
transistor w 431
NPN Transistor TO220 VCEO 50v i 10A
transistor TF 431
IC 431
TRANSISTOR a 1270
431 transistor
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ISV50
Abstract: No abstract text available
Text: DTC125TU/DTC125TK/DTC125TS/DTC125TF DTC125TL/DTC125TA/DTC125TV h -y > v * £ /T ra n s is to rs D TC 125TU /D TC 125TK /D TC 125TS D TC 125TF/D TC 125TL/D TC 125TA DTC125TV suut-7>->'*$ ^ • », 'AM'O.Vvti-r 7 ^/Transistor Switch Digital Transistors Includes Resistors
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DTC125TU/DTC125TK/DTC125TS/DTC125TF
DTC125TL/DTC125TA/DTC125TV
125TU
125TK
125TS
125TF/D
125TL/D
125TA
DTC125TV
DTC125T
ISV50
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Untitled
Abstract: No abstract text available
Text: DTC314TK/DTC314TS/DTC314TF DTC314TL/DTC314TA/DTC314TV h 7 > y ^ ^ / T ransistors D TC 314TK /D TC 314TS /D TC 314TF D TC 314TL/D TC 314TA /D TC 314TV ^ a — t - -f > v £ JU h 7 > V S U a r t i E 7 ^-/Transistor Switch Digital Transistors (Includes Resistors
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DTC314TK/DTC314TS/DTC314TF
DTC314TL/DTC314TA/DTC314TV
314TK
314TS
314TF
314TL/D
314TA
314TV
-71-JfJ
50mA/
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Untitled
Abstract: No abstract text available
Text: DTC144TU/DTC144TK/DTC144TS/DTC144TF DTC144TL/DTC144TA/ DTC144TV /T ra n sisto rs D TC 144T U /D TC 144T K /D T C 144TS D TC 144T F/D TC 144TL/D TC 144TA DTC144T V 5s $h t-7 > 7- 9 mtnftM h > v * 9 7 ^/Transistor Switch Digital Transistors Includes Resistors)
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DTC144TU/DTC144TK/DTC144TS/DTC144TF
DTC144TL/DTC144TA/
DTC144TV
144TS
144TL/D
144TA
DTC144T
DTC144TL/DTC144TA/DTC144TV
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DTC114WS
Abstract: No abstract text available
Text: DTC114WU/DTC114WK/DTC114WS/DTC114WF DTC114WL/DTC114WA/DTC114WV Is ~7 > v 7. $ / T ransistors DTC114W U /D TC 114W K /D TC 114WS D TC 114W F/D TC 114W L/D TC 114WA DTC114W V ^-/Transistor Switch Digital Transistors Includes Resistors • f7 • $\-MT f& H /D im e n s io n s (Unit : mm)
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DTC114WU/DTC114WK/DTC114WS/DTC114WF
DTC114WL/DTC114WA/DTC114WV
DTC114W
114WS
114WA
DTC114WS
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SI-8020
Abstract: str7103 ic 8022 SI 122 D transistor 152 M SI-8021 STR7003 SI-8023 STR7101 SI-8020
Text: SWITCHING-TYPE 2-PACK TYPE REGULATORS M axim um Ratings (TA=25°C) Type No. Power Transistor Collector Current Power Dissipation W ithstand Voltage (V) Ic (A) 60 (peak 7.5) 60 (peak 15) STR7001 Operating Temperature (Tc=25°C) (Tc) PD (W) Ta (“ C) 100
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STR7001
STR7002
STR7003
STR7101
STR7102
STR7103
SI-8020
SI-8021
SI-8022
SI-8023
ic 8022
SI 122 D
transistor 152 M
STR7101 SI-8020
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Untitled
Abstract: No abstract text available
Text: DTA144VU A / D TA144VKA / D TA144VSA Transistors D TC 144V U A / D TC 144V K A / D TC 144V SA Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA I •Features •A bsolu te maximum ratings (T a = 2 5 t:) 1 ) Built-in bias resistors enable the configuration of an inverter
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DTA144VU
TA144VKA
TA144VSA
DTA144VUA
DTA144VKA
DTA144VSA
0Dlb713
O-220FN
O-220FN
O220FP
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Untitled
Abstract: No abstract text available
Text: o re TIP31C NPNEXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The U TC TIP31C is a NPN expitaxial planar transistor, designed fo r using in general purpose am plifier and switching applications. FEATURE ‘ C om plem ent to tip32C
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TIP31C
TIP31C
tip32C
QW-R203-010
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2SD2449
Abstract: 2-21F1A 2SB1594 2sb15
Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 High Breakdown Voltage : Vqe O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO
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2SD2449
2SB1594
2SD2449
2-21F1A
2SB1594
2sb15
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Untitled
Abstract: No abstract text available
Text: m 2N6660 \ \ MOS N-CHANNEL TRANSISTOR DESCRIPTION: The 2N6660 is an N-Channel Enhancement-Mode MOS Transistor for General Purpose Switching Applications. MAXIMUM RATINGS A @ Tc = 25 °C 800 m A @ T c = 100 °C VDs= 60 V VGS = ±20 V 6.25 W @ 25 °C 2.5 W @ 100 °C
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2N6660
2N6660
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Untitled
Abstract: No abstract text available
Text: m 2N6338 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6338 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO- 3/TO-204AA U I *J MAX. I MAXIMUM RATINGS 25 A lc 50 A PEAK 100 V V ce 200 W @ Tc = 25 °C
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2N6338
2N6338
3/TO-204AA
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