SMD M05 sot23
Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly
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SMD M05 sot23
NE5531
nE352
A3 smd sot-343
transistor smd m05
SMD transistor M05
transistor smd code 404
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BUK107-50GL
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50GL PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor
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BUK107-50GL
SC13a
SCA54
137087/1200/01/pp11
BUK107-50GL
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BC337
Abstract: BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor
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BUK107-50DS
SC13a
SCA54
137087/1200/02/pp12
BC337
BC337-10
mosfet 5130
BUK107-50DS
bc337 texas
4466 8 pin mosfet pin voltage
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4466 8 pin mosfet pin voltage
Abstract: 501 mosfet transistor BUK107-50DL
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DL PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor
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BUK107-50DL
SC13a
SCA54
137087/1200/02/pp12
4466 8 pin mosfet pin voltage
501 mosfet transistor
BUK107-50DL
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d2p01
Abstract: AN569 MMDF2P01HD MMDF2P01HDR2 SMD310
Text: MOTOROLA Order this document by MMDF2P01HD/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMDF2P01HD Medium Power Surface Mount Products TMOS P-Channel Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs
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MMDF2P01HD/D
MMDF2P01HD
MMDF2P01HD/D*
d2p01
AN569
MMDF2P01HD
MMDF2P01HDR2
SMD310
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s1308 diode
Abstract: S1308 diode s1308 MMSF1308R2 motorola an569 thermal AN569 MMSF1308 SMD310
Text: MOTOROLA Order this document by MMSF1308/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMSF1308 Low Power Surface Mount Products Single N-Channel MiniMOS Field Effect Transistor MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These
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MMSF1308/D
MMSF1308
s1308 diode
S1308
diode s1308
MMSF1308R2
motorola an569 thermal
AN569
MMSF1308
SMD310
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D2C01
Abstract: AN569 MMDF2C01HD MMDF2C01HDR2 SMD310
Text: MOTOROLA Order this document by MMDF2C01HD/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMDF2C01HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs
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MMDF2C01HD/D
MMDF2C01HD
MMDF2C01HD/D*
D2C01
AN569
MMDF2C01HD
MMDF2C01HDR2
SMD310
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pd 223
Abstract: AN569 MTU20N40E motorola MOSFET 935
Text: MOTOROLA Order this document by MTU20N40E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTU20N40E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 20 AMPERES 400 VOLTS RDS on = 0.19 OHM This high voltage MOSFET uses an advanced termination
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MTU20N40E/D
MTU20N40E
pd 223
AN569
MTU20N40E
motorola MOSFET 935
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and
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CGH35060F
CGH35060F
CGH3506
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TMOS E-FET
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP3055VL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet V MTP3055VL Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM
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MTP3055VL/D
MTP3055VL
MTP3055VL/D*
TMOS E-FET
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25P 03L
Abstract: 25P03L NTD25P03LG
Text: NTD25P03L Power MOSFET −25 A, −30 V, Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast
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NTD25P03L
NTD25P03L
0E-03
0E-02
0E-05
0E-04
0E-01
25P 03L
25P03L
NTD25P03LG
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MTP3055V
Abstract: TMOS E-FET transistor MJ 122
Text: MOTOROLA Order this document by MTP3055V/D SEMICONDUCTOR TECHNICAL DATA Data Sheet V MTP3055V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.15 OHM
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MTP3055V/D
MTP3055V
MTP3055V/D*
MTP3055V
TMOS E-FET
transistor MJ 122
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SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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734TL
UWEB-MODEM-34
HCS412/WM
TLV320AIC10IPFB
100MB
NEON250
GA-60XM7E
BLK32X40
BLK32X42
SKIIP 33 nec 125 t2
skiip 613 gb 123 ct
RBS 6302 ericsson
SKIIP 513 gb 173 ct
THERMISTOR ml TDK 150M
pioneer PAL 010a
Project Report of smoke alarm using IC 555 doc
SKiip 83 EC 125 T1
ericsson RBS 6000 series INSTALLATION MANUAL
Ericsson Installation guide for RBS 6302
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DS90CR216A
Abstract: DS90CR218A MAX9210 MAX9215 MAX9222
Text: 19-2864; Rev 4; 3/05 Programmable DC-Balance 21-Bit Deserializers The MAX9210/MAX9212/MAX9214/MAX9216/MAX9220/ MAX9222 deserialize three LVDS serial data inputs into 21 single-ended LVCMOS/LVTTL outputs. A parallel rate LVDS clock received with the LVDS data streams provides timing for deserialization. The outputs have a separate supply, allowing 1.8V to 5V output logic levels.
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21-Bit
MAX9210/MAX9212/MAX9214/MAX9216/MAX9220/
MAX9222
MAX9209/MAX9211/MAX9213/
MAX9215
MAX9210/MAX9212/MAX9214/MAX9216
DS90CR216A
DS90CR218A
MAX9210
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EPS17
Abstract: MAX9220EUM
Text: 19-2864; Rev 1; 10/03 Programmable DC-Balance 21-Bit Deserializers The MAX9210/MAX9212/MAX9214/MAX9216/MAX9220/ MAX9222 feature programmable DC balance, which allows isolation between a serializer and deserializer using AC-coupling. A deserializer decodes data transmitted by a MAX9209/MAX9211/MAX9213/MAX9215
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21-Bit
MAX9210/MAX9212/MAX9214/MAX9216/MAX9220/
MAX9222
MAX9209/MAX9211/MAX9213/MAX9215
MAX9210/MAX9212/MAX9214/MAX9216
T4877-1
EPS17
MAX9220EUM
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Ultrasonic Distance lc
Abstract: NPN Monolithic Transistor Pair
Text: DIONICS INC. 6 5 R U SH M O R E ST., W E S TB U R Y , N .Y . 11590 Dl 4044 • 4878 Dl 4100 • 4879 Dl 4045 • 4880 Dl 4045-1 516 « 9 9 7 * 7474 NPN SILICON MATCHED PAIR TRANSISTOR CHIPS WITH MATCHING CHARACTERISTICS 100% PROBED 20.0 I«—4 0 . — »I
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00GCI430
00D0431
Ultrasonic Distance lc
NPN Monolithic Transistor Pair
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7474 ic chip
Abstract: 7474 ic IC 7414 IC 7474 D1404 7474 NPN Monolithic Transistor Pair Monolithic Transistor Pair ultrasonic bond Ultrasonic Distance lc
Text: DIONICS INC. 6 5 R U SH M O R E ST., W E S TB U R Y , N .Y . 11590 Dl 4044 • 4878 Dl 4100 • 4879 Dl 4045 • 4880 Dl 4045-1 516 « 9 9 7 * 7474 NPN SILICON MATCHED PAIR TRANSISTOR CHIPS WITH MATCHING CHARACTERISTICS 100% PROBED 20.0 I«—4 0 . — »I
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00DD430
00D0431
7474 ic chip
7474 ic
IC 7414
IC 7474
D1404
7474
NPN Monolithic Transistor Pair
Monolithic Transistor Pair
ultrasonic bond
Ultrasonic Distance lc
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EL 817 c337
Abstract: transistor c337 c337 transistor C337 W 61 DS4005
Text: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification
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BUK107-50DS
SC13a
BUK107-50
SCA54
137087/1200/02/pp12
EL 817 c337
transistor c337
c337 transistor
C337 W 61
DS4005
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servomotor
Abstract: power amplifier for servomotor driver sanyo sled 2SB815 2SC3650 LB8106M "Up Converter" D1694
Text: Ordering number: EN 4105A Monolithic Digital IC LB8106M N o. 4 1 0 5 A SAIÊYO i Actuator Driver for Portable CD Players Overview Pin Assignment The LB8106M is a four-channel actuator driver for driving the focus coil, tracking coil, spindle motor and sled motor in portable CD players.
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EN4105A
LB8106M
LB8106M
44-pin
servomotor
power amplifier for servomotor driver
sanyo sled
2SB815
2SC3650
"Up Converter"
D1694
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TH 2190 Transistor
Abstract: 30p06v 30P06 P06V TH 2190 mosfet transistor 4413
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet M T B 3 0 P 06 V TM O S V™ P o w er Field E ffe c t T ran sisto r D 2PAK for S u rfa c e M ount M o to ro la P r e fe r re d D e v ic e TMOS POWER FET 30 AMPERES 60 VOLTS P-Channel Enhancement-Mode Silicon Gate
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commuta14
0E-05
1OE-04
0E-02
TH 2190 Transistor
30p06v
30P06
P06V
TH 2190 mosfet
transistor 4413
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wn 537 a fet
Abstract: wn 537 transistor ty 542 smd transistor 410F2
Text: SIEMENS PROFET BTS 410 F2 Smart Highside Power Switch Features Product Summary • • • • • • • • Overvoltage protection • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump
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CM05I8S
BTS307/308
O-22QAB/5,
E3043
Q67060-S6103-A3
wn 537 a fet
wn 537 transistor
ty 542 smd transistor
410F2
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SK4100
Abstract: No abstract text available
Text: V i» * * :» J ;j i\l t ! Y , HAL= , , '_^-o l.J B R ID G E >OWEh< u i U O t H Y B R ID 4100 8170 Thompson Road Cícera N.Y. 13039 > MIL-STD-1772 CERTIFIED FEATURES: • • • • • • • 315) 689-9201 600V, 30 Amp Capability Ultra Low Thermal Resistance - Junction to Casa - 0.5°C/W
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MIL-STD-1772
MSK4100
MSK4100B
SK4100
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMDF2P01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2P01 HD Medium Power Surface Mount Products M otorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs
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MMDF2P01HD/D
F2P01
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bu2527dx
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
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BU2527DX
IE-06
1E-04
1E-02
bu2527dx
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