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    TRANSISTOR T462 Search Results

    TRANSISTOR T462 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T462 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor A131

    Abstract: BT124 T68A staking T46-2-9 T46-4-9 transistor t44 T441M TRANSISTOR R52 R53 CA
    Text: 69 Accessories Wire-Wrap Terminals for .042” Holes Terminals: Vector Wiring Terminals are useful for breadboarding or prototyping using Vectorbord plugbords TM and accessories. Individual stamped and/or machine terminals are provided in convenient package quantities. Tools for insertion and staking


    Original     		PDF T44/M T46-2-9/M T46-3-9/C T46-3-9/M T46-4-9/C T46-4-9/M T46-5-9/C T46-5-9/M T49/C T49/M Transistor A131 BT124 T68A staking T46-2-9 T46-4-9 transistor t44 T441M TRANSISTOR R52 R53 CA

    k3225

    Abstract: T68A Transistor A131 018DIAMETER K322M K322 vectorbord T42-1 P149A R53C r50 transistor
    Text: Wire-Wrap Terminals for .042" Holes T44, T68 Bifurcated Terminals: Vector Wiring Terminals are useful for breadboarding or prototyping using Vectorbord plugbords and accessories. Individual stamped and/or machine terminals are provided in convenient package quantities. Tools for insertion and staking are also available.


    Original     		PDF T124/M R32/C R32/M T124-040/500 k3225 T68A Transistor A131 018DIAMETER K322M K322 vectorbord T42-1 P149A R53C r50 transistor

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell


    OCR Scan     		PDF 353011M 00D0141 8808ACL 8808ACL 8808ACL-10 8808ACL-85 8808ACL-CMHR

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 4 ÔE L06IC/NEH0RY •=10=17240 D G S 5 D 7 S D ■lit! 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM PRELIMINARY DESCRIPTION The TC518129A-LV Fam ily is a 1M bit high speed CMOS Pseudo Static RAM organized a s 131,072 w ords b y 8 bits. The TC518129A-LV fam ily utilizing one transistor dynamic m em ory cell w ith CMOS


    OCR Scan     		PDF L06IC/NEH0RY TC518129A-LV TC518129APL/AFL/AFWLâ -10LV, -12LV TC518129AFTL/ATRLâ

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 4bE ì> HARRIS SEMICOND SECTOR £! m M3QS271 OGBTlôô E • H A S HM-65642/883 H L A J R F R IS S E M I C O N D U C T O R ~T~t4(a "2LS ~ 128K x 8 Asynchronous CMOS Static RAM January 1992 Features • Description This Circuit Is Processed In Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions of


    OCR Scan     		PDF M3QS271 HM-65642/883 Mll-Std883 150ns an42/883 T-46-23-12 MIL-STD-1835, GDIP1-T28 MIL-M38510

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    REGULATOR S 812

    Abstract: S-81250AG S81230AG S-2212R s812 S2212R S-81230AG
    Text: SE IK O INSTRUMENTS U H fil D E I Ö1S3M43 Q D D D IU 2 | T-46-23-08 ’ S NON-VOLATILE MEMORY/NON-VOLATILE RAM f g g g ★Under development APPLICATIONS The non-volatile RAM NV RAM) is a non-volatile CMOS • Constants setting memory combining a static CMOS RAM and a non-volatile


    OCR Scan     		PDF 1S3M43 T-46-23-08 38mV/° S-81230AG) S-80230AG S-80250AG S-81230AG S-81250AG S-81250HG TYP30 REGULATOR S 812 S81230AG S-2212R s812 S2212R

    Untitled

    Abstract: No abstract text available
    Text: H A RR IS S E M I C O N D S E C T O R 4bE D • 430E271 D 0 3 H 7 3 G HAS HM-65262/883 HARRIS S E M I C O N D U C T O R “ H G r 2 .3 -C ? e > 16Kx1 Asynchronous CMOS Static RAM January 1992 Features Pinouts • This Circuit is Processed in Accordance to Mil-Std-883 and is


    OCR Scan     		PDF 430E271 HM-65262/883 16Kx1 Mil-Std-883 70/85nsMax T-46-23-05 MIL-M38510 MIL-STD-1835, GDIP1-T20

    HY6116-10

    Abstract: HY6116 HY6116-12 HY6116-15 Hyundai Semiconductor
    Text: HYUNDAI ELECTRONICS A3 dË| 4675088 HYUNDAI ELEC TR ON IC S MbTSOSÖ 0000003 E 83D 00083 ^ 4 6 -2 3 -1 2 jy rs i» « ' A ti t iR « L S jg g iy FEBRUARY 1986 FEATURES DESCRIPTION The HY6116 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high


    OCR Scan     		PDF t-46-23-12 HY6116 2048-word HY6116-10 HY6116-12 HY6116-15 HY6116 100ns 120ns 150ns HY6116-10 HY6116-12 HY6116-15 Hyundai Semiconductor

    Untitled

    Abstract: No abstract text available
    Text: 43G2271 DGBTQÜÖ 7 • H A S HbE » HARRIS SEMICOND SECTOR CDP1822 CDP1822C T "4 ìé='2.'5 ■'OT ¡T I H A R R IS S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM February 1992 Features Description • Low Operating Current The CDP1822 and CDP1822C are 256-word by 4-bit static


    OCR Scan     		PDF 43G2271 CDP1822 CDP1822C 256-Word CDP1822 CDP1822C

    Untitled

    Abstract: No abstract text available
    Text: 13E D I TSOSBID □0G04t.l VITELIC CORP V s\ - Z 3 'O VITELIC ^ V61C67 FAMILY HIGH PERFORMANCE LOW POWER 16K x 1 BIT CMOS STATIC RAM Features Description • High Speed • Maximum access time of 2 5 /3 5 /4 5 /5 5 /7 0 ns The V61C67 is a high speed, low power, 16,384word by 1-bit CMOS static RAM fabricated using


    OCR Scan     		PDF 0G04t V61C67 384word V61C67

    CDM62256-10

    Abstract: No abstract text available
    Text: H A RR IS S E M I C O N D S E C T O R 37E D • 4 3 0 5 27 1 D D S a b S l 7 « H A S Random-Access Memories RAMs . T -4 6 -2 3 -1 4 CDM62256 A14- 1 28 — A t2 — 2 A7— Î 27 - W Ï 26 - At 3 AS — 4 A ft — 9 A 4 - 6 A3 — A2 — 7


    OCR Scan     		PDF CDM62256 A14----A 768-Word 28-pin CDM62256-10 CDMS2258-10I CDM62256-12I -40336R

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SENICOND SECTOR Œ\ MtiE ì> HARRIS S E M I C O N D U C T O R CDP1826C m M3GSB71 OOB'iDMO 3 « H A S 2 .3 - 12 ^ CMOS 64-Word x 8-Bit Static RAM February 1992 Features Description • Ideal for Small, Low-Power RAM Memory Requirements In Micropro­


    OCR Scan     		PDF CDP1826C M3GSB71 64-Word CDP1826C CDP1800-series M30E271 T--46-23--12

    TC55257

    Abstract: tc51832fl-10 tc51832fl 128X8 A12C TC51832 TC51832F TC51832P TC51832PL-10 TC51832SPL-10
    Text: ,_ J TOS H IB A : _ L O G I C / M E M O R Y 4SE D • llg r iHii ^0^7246 D025D11 32,768 WORD x 8 BIT CMOS PSEUDO STATIC RAM □ ■TOSS* - - iDESCRIPTIONl The TC51832 Family is a 256K bit high-speed CMOS Pseudo-Static RAM organized as 32,768


    OCR Scan     		PDF D025D11 TC51832 TC51832SP-85, TC51832SPL-85 TC51832SP-10, TC51832SPL-10 TC51832SP-12, TC51832SPL-12 TC55257 tc51832fl-10 tc51832fl 128X8 A12C TC51832F TC51832P TC51832PL-10

    HY61C16-70

    Abstract: HY61C16 61C16 k239
    Text: HYUNDAI ELE CTRO NI CS 03 «tO ^U O Q HTUNUA1 D Ë 1 4t.750ññ OOOOOñT 3 | tL fcU IK U N X C S Ö3 D 0 0 0 0 9 D T?4 b “2 3 -1 2 FEATURES DESCRIPTION The HY61C16 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high


    OCR Scan     		PDF HY61C16 2048-word HY61C16L K29793/4 K23955/7 DS01-02/86 HY61C16-70 61C16 k239

    cdm 316

    Abstract: CDM6264 CDM6264-3 ca 3161 e IC CDM6264-2 M6264
    Text: HARRIS SEMICOND SECTOR 37E P Random-Access Memories RAM s . H M3G2271 0023b45 1 Bi HAS - T-46-23-12 CDM6264 NC-AI2— AT — A6 — AS-A4-A3 — A2-A1 -AO— 1/01 — 1/02 — 1703-vss— r 2 3 4 5 6 7 8 9 10 II 12 IS 14


    OCR Scan     		PDF M3G2271 0023b45 T-46-23-12 CDM6264 1703-vss-- 8192-Word 28-pin cdm 316 CDM6264 CDM6264-3 ca 3161 e IC CDM6264-2 M6264

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS FU JITSU 23E D 374T7L5 0007042 1 I MOS 262144-BIT DYNAMIC RANDOM ACCESS MEMORY MB 81464-10 MB 81464-12 MB 81464-15 June 1987 Edition 4.0 65,536 x 4 DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB 81464 is fu lly decoded, dynam ic random access m em ory


    OCR Scan     		PDF 374T7L5 262144-BIT 20-LEAD ZIP-20P-M01) Z2Q001S-3C 0GD70k3 18-LEAD DIP-18C-A01) D18014S-4C

    u31c

    Abstract: ASG TRANSISTOR
    Text: N E C ELECTRONICS INC 3ÖE 3> b4a?525 d ü b i ^ h 0 * n e c e PPD424102 4,194,304 X 1-Bit Dynamic CMOS RAM N EC E lectronics Inc. Description Pin Configurations The /JPD424102 is a static-oolumn dynamic RAM orga­ nized as 4,194,304 words by 1 bit and designed to


    OCR Scan     		PDF uPD424102 /JPD424102 u31c ASG TRANSISTOR

    TfiS SEMICONDUCTOR GROUP

    Abstract: MSM514400 MSM514400-10 S4240 24B4G
    Text: 4b E D • b7S4240 O K I QODTbDS TfiS B O K I J SEMICONDUCTOR M S M 5 1 4 4 0 0 7 - GROUP V * - 2 3 1,048,576-WORD X 4-BIT DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 5 1 4 4 0 0 isa new generation dynamic R A M organized as 1,048,576 w ords by 4 bits.


    OCR Scan     		PDF b724240 MSM514400 576-WORD MSM514400isa 26-pin 20-pin msm5144oo- b75424Q TfiS SEMICONDUCTOR GROUP MSM514400-10 S4240 24B4G

    CA10

    Abstract: MSM514100-10 MSM514100-8A msm514100
    Text: 4bE D O K I M S M s e m i c o • b724SMQ 0 0 0 S S 7 7 2*10 « O K I J n d u c t o r T O K I 5 1 4 1 0 0 - y t - z t ' / SEMICONDUCTOR GROUP 4,19 4 ,3 0 4 -W Q R D x 1-BIT D YN A M IC RA M : FAST PAGE M O D E TYPE G EN ER A L DESCRIPTION The MSM514100 is a new generation dynamic RAM organized as 4,194,304 words by 1 bit.


    OCR Scan     		PDF 24SM0 MSM514100 304-WORDx1-BIT 26-pin 20-pin 18-pin T-46-23-15 b7242M0 CA10 MSM514100-10 MSM514100-8A

    FZJ 131

    Abstract: MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS dynamic ram binary cell
    Text: O K I semiconductor MSM51C256RS/JS • 7= - a .* - A S " * 262, 144 W ORD X 1-BITS DYNAM IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The


    OCR Scan     		PDF MSM51C256RS/JS MSM51C256 DIP/18 MSM51C256-8 MSM51C256-10 MSM51C256-12 FZJ 131 MSM51C256RS dynamic ram binary cell

    Untitled

    Abstract: No abstract text available
    Text: 4bE D rtTTT - • b72424D ODD'mûô I T S H O K I J I O K I SEMICONDUCTOR GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 2 6 2 ,1 4 4 W O RD X1-BITS D Y N A M IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit.


    OCR Scan     		PDF b72424D MSM51C256_ MSM51C256 DIP/18 MSM51C256-80 MSM51C256-10

    Untitled

    Abstract: No abstract text available
    Text: VITELIC CORP V 1BE D | ^502310 U o q q ^ VITELIC V61C16 FAMILY HIGH PERFORMANCE LOW POWER 2K 8 BIT CMOS STATIC RAM 4 | J M io 'Z y~ x Features Description • High Speed • Maximum access time of 25/35/45/55/70 ns • Equal access and cycle times The V61C16 is a high speed, low power, 2048-word


    OCR Scan     		PDF V61C16 2048-word 015A060 064U00