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    TRANSISTOR T 023 Search Results

    TRANSISTOR T 023 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T 023 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor "micro-x" "marking" 102

    Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
    Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e


    Original     		PDF NE681 transistor "micro-x" "marking" 102 laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009

    BJT characteristics

    Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
    Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e


    Original     		PDF NE681 BJT characteristics NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE68100 NE68118 NE68119

    NE68135

    Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
    Text: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o


    Original     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    AF106

    Abstract: AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106
    Text: 5SC D • 023SbQS GGQHG47 S H S I E G ; PNP Germanium RF Transistor T '- lf- O l ' A F 106 SIEMENS A K T I E N G E S E L L S C H A F T 04047 D for input, mixer, and oscillator stages up to 260 MHz The AF 106 is a general-purpose germanium PNP high frequency mesa transistor in TO 72


    OCR Scan     		PDF 023SbOS GGGHG47 AF106 AKTIEN6ESELLSCHAF25C AF106 AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106

    AF4505

    Abstract: transistor BF 502 Q U 31U transistor s250
    Text: ESC D • 023SbOS ÛQQ45GS T BISIEG ; 7^-5/' 2 / NPN Silicon RF Transistor SIEMENS BF502 A K T I E N G E S E L L S C H A F >4505 0 - | BF 5 0 2 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 D I N 4 1 86 8 .


    OCR Scan     		PDF 023SbOS QQ45GS BF502 AF4505 transistor BF 502 Q U 31U transistor s250

    JE 800 transistor

    Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
    Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )


    OCR Scan     		PDF uPA76HA JE 800 transistor upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s

    Untitled

    Abstract: No abstract text available
    Text: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to


    OCR Scan     		PDF 023SbOS Q62702-F390

    Transistor C G 774 6-1

    Abstract: C G 774 6-1 1041T060
    Text: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low


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    NEC C3568

    Abstract: c3568 C3568 NEC AFT85 C0471 2SA1396 2SC3568 T460
    Text: '> >J =3 > s<*7— h Silicon P o w er Transistor 2SC3568 NPNX I = l> h + 9 x i f f l NPN Silicon Epitaxial Transistor High Speed Switching Industrial Use 2S C 3568 l i f t S i t X^í 7 f > 9’m t K^=I7 - DC —DC n > -FÿVyXj't, 9, PACKAGE DIMENSIONS U n it : mm)


    OCR Scan     		PDF C3568 2SA1396 24-lll 22-ft 25-fiSift 32-te 34-Ss 27-fe 29-ffiiE NEC C3568 C3568 NEC AFT85 C0471 2SA1396 2SC3568 T460

    MRF914

    Abstract: No abstract text available
    Text: MO T O R O L A SC X S T R S / R F MbE D • b3b72Sil GQTM'iMM S ■ noTb MOTOROLA T - 3 1 - 1*5 ■ SEMICONDUCTOR TECHNICAL DATA MRF914 The E F Line fy = 4.5 GHz @ 20 mA HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for applications requiring high-gain, low-noise and


    OCR Scan     		PDF b3b72Sil MRF914 MRF914

    AT41485

    Abstract: No abstract text available
    Text: Thal H E W L E T T * mLfiM P A C K A R D Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features diate sized transistor with imped­ ances that are easy to match for low noise and moderate power applications. Applications include


    OCR Scan     		PDF AT-41485 AT-41485 ionimpla27 Kn/50 DD17b43 AT41485

    transistor Siemens 14 S S 92

    Abstract: CBV2 BRY56 Q68000-A803 Q68000-A803-S1 Q68000-A803-S3 IW transistor BRY 56 A Programmable unijunction D 823 transistor
    Text: ESC D • 023StiOS 0004773 1 M S Ï E G , Programmable Unijunction Transistor BRY 56 T -3 - ^ - o f SIEMENS AKTIEN6ESELLSCHAF Programmable silicon planar unijunction transistor in TO 9 2 plastic package 10 A 3 DIN 4 1 8 6 8 . H8m ax Type O rdering cod e


    OCR Scan     		PDF 23SlaOS BRY561' Q68000-A803 Q68000-A803-S1 068000-A803-S2 Q68000-A803-S3 DQ04777 BRY56 transistor Siemens 14 S S 92 CBV2 BRY56 Q68000-A803 Q68000-A803-S1 Q68000-A803-S3 IW transistor BRY 56 A Programmable unijunction D 823 transistor

    2M4427

    Abstract: TRANSISTOR 2SC 635
    Text: 7 = 3 /- 2 3 MOTOROLA SC XSTRS/R F 4bE D b3b7ES4 00T404S <4 H I I O T b MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F Lin e 1 W - 175 MHz HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for amplifier, frequency multiplier, or oscillator


    OCR Scan     		PDF 00T404S 2M4427 2M4427 TRANSISTOR 2SC 635

    upa74ha

    Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
    Text: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )


    OCR Scan     		PDF uPA74HA UPA74 PA74H gw 348 PA74HA k 2445 transistor

    SC2334

    Abstract: fls09 1444 G 92-0151 2SA1010
    Text: NEC j \ f x > i / < 7 - Silicon Power Transistor A 2 P N P I t°i'+S'T./UJKS«' U 3 > h v S A 1 1 ^ S i i S J a iS W B E x - f ' y f v iS t ffl PNP Silicon Epitaxial Transistor High Speed High Voltage Switching Industrial Use 2 S A 1010 i i g J t i S i t B E X ^


    OCR Scan     		PDF 2SA1010 SC2334 SC2334 fls09 1444 G 92-0151 2SA1010

    2SK659

    Abstract: TC-6071
    Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #


    OCR Scan     		PDF 2SK659 2SK659Ã 2SK659 TC-6071

    2SC3115

    Abstract: 2SA1247 2sc311 JE720 8115, transistor i093 VCF5 K076 JE 720 transistor 8115 TRANSISTOR
    Text: NEC Silicon Transistor 2 S C 3 1 1 5 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier PA C K A G E D IM EN SIO N S 4 $ * / FEA TU RES o f t * r H - <7 ^ > h o - ;u T > 7^* M M J f l . ' < * 7 - T > - T n m z i s i im m m M W 'J ' 'fi o £ itì/± ,


    OCR Scan     		PDF 2SC3115 2SA1247 2SC3115 2sc311 JE720 8115, transistor i093 VCF5 K076 JE 720 transistor 8115 TRANSISTOR

    TRANSISTOR GB 558

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558

    MRF5175 transistor

    Abstract: MRF5175 transistor 2sc 546
    Text: MOT OR OL A SC CXSTRS/R F 4bE D • MOTOROLA b3b?2SM GOLOSO T -3 3 -0 5 ■ SEMICONDUCTOR TECHNICAL DATA MRF5175 T h e R F L in e 5 W - 400 MHi R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver


    OCR Scan     		PDF MRF5175 28-Volt, 400-M T-33-05 MRF5175 transistor MRF5175 transistor 2sc 546

    zo 107 NA P 611

    Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
    Text: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


    OCR Scan     		PDF fl23Sb05 QQQ4b43 Q62702-F655 023SbQS BFQ60 zo 107 NA P 611 TRANSISTOR 2SC 2026 642p 2sc 643

    2SA1462

    Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
    Text: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,


    OCR Scan     		PDF 2SA1462 o2SC3735 2SA1462 JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor