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    TRANSISTOR SMD A6 K Search Results

    TRANSISTOR SMD A6 K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD A6 K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd transistor A6

    Abstract: smd transistor A6 3 TFDS3000 Telefunken ir receiver SMD a6 Transistor a6 smd transistor
    Text: TFDS3000 Integrated Infrared Transceiver Module IrDA SIR Description The TFDS3000 is an infrared transceiver for data communication systems. The transceiver is compatible to the IrDA standard which allows data rates up to 115 kB/s. An internal AGC (Automatic Gain Control) ensures


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    TFDS3000 TFDS3000 D-74025 15-Aug-96 smd transistor A6 smd transistor A6 3 Telefunken ir receiver SMD a6 Transistor a6 smd transistor PDF

    A7 SMD TRANSISTOR

    Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is


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    HS-6664RH HS-6664RH HS6664R A7 SMD TRANSISTOR SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor PDF

    transistor SMD p16

    Abstract: transistor SMD b22 ISL95901 smd TRANSISTOR code b6 CRCW06033162F
    Text: Application Note 1743 Author: Jun Xiao Wide VIN Dual Integrated Buck Regulator With 6A/6A Continuous Output Current and LDOs Specifications FSW POSITION SWITCHING FREQUENCY kHz FSW = GND 300 FSW = OPEN 500 FSW = VCC 1000 Quick Setup Guide VIN RANGE (V) VOUT


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    ISL95901EVAL1Z AN1743 transistor SMD p16 transistor SMD b22 ISL95901 smd TRANSISTOR code b6 CRCW06033162F PDF

    A7 SMD TRANSISTOR

    Abstract: SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8K x 8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process,


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    HS-6664RH HS-6664RH A7 SMD TRANSISTOR SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10 PDF

    smd code A9 3 pin transistor

    Abstract: smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9
    Text: High Speed Converter Evaluation Platform HSC-ADC-EVALC FEATURES PRODUCT HIGHLIGHTS Xilinx Virtex-4 FPGA-based buffer memory board Used for capturing digital data from high speed ADC evaluation boards to simplify evaluation 64 kB FIFO depth Parallel input at 644 MSPS SDR and 800 MSPS DDR


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    ADP3339AKCZ-3 SKHHAKA010 CBSB-14-01 DPS050300U-P5P-TK ADR512ART ERJ-2GEJ622X ERJ-2GE0R00X ERJ-2GEJ133X ERJ-2GEJ102X ECJ-0EB0J224K smd code A9 3 pin transistor smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9 PDF

    dynamic ram binary cell

    Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
    Text: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of


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    HS-65647RH HS-65647RH dynamic ram binary cell A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC PDF

    ta 6203

    Abstract: 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9 HM-65262
    Text: HM-65262 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris Advanced


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    HM-65262 70/85ns HM-65262 ta 6203 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9 PDF

    A16311

    Abstract: MARK 12LL diode M5M5V208FP A9 transistor SMD smd transistor a9
    Text: MITSUBISHI LSIs '97.3.21 M5M5V208FP,VP,RV,KV,KR -70L-W , -85L -W, -10L-W , -12L-W , -70LL-W, -85LL-W, -10LL-W, -12LL-W 2097152-BIT 262144-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M5V208 is 2,097,152-bit CMOS static RAM organized as


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    M5M5V208FP -70L-W -10L-W -12L-W -70LL-W, -85LL-W, -10LL-W, -12LL-W 2097152-BIT 262144-WORD A16311 MARK 12LL diode A9 transistor SMD smd transistor a9 PDF

    SMD a16 Transistor

    Abstract: DQ7-21 M5M5V108CFP 11A16 smd transistor A8 M5M5V108CRV M5M5V108CVP transistor smd tsu
    Text: MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70H, -10H, -70X, -10X 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and


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    M5M5V108CFP 1048576-BIT 131072-WORD M5M5V108CVP 32-pin SMD a16 Transistor DQ7-21 11A16 smd transistor A8 M5M5V108CRV transistor smd tsu PDF

    SMD a16 Transistor

    Abstract: DQ7-21 MARK S2 smd transistor A8 M5M5V108CFP M5M5V108CRV M5M5V108CVP
    Text: MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70HI, -10HI, -70XI, -10XI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and


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    M5M5V108CFP -70HI, -10HI, -70XI, -10XI 1048576-BIT 131072-WORD M5M5V108CVP SMD a16 Transistor DQ7-21 MARK S2 smd transistor A8 M5M5V108CRV PDF

    M5M51008CP

    Abstract: M5M51008CRV M5M51008CVP
    Text: MITSUBISHI LSIs M5M51008CP,FP,VP,RV,KV,KR -55H, -70H, -55X, -70X 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and


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    M5M51008CP 1048576-BIT 131072-WORD M5M51008CVP 32-pin M5M51008CRV PDF

    SMD a16 Transistor

    Abstract: M5M51008CP M5M51008CRV M5M51008CVP 55-HI
    Text: MITSUBISHI LSIs M5M51008CP,FP,VP,RV,KV,KR -55HI, -70HI, -55XI, -70XI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and


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    M5M51008CP -55HI, -70HI, -55XI, -70XI 1048576-BIT 131072-WORD M5M51008CVP SMD a16 Transistor M5M51008CRV 55-HI PDF

    MARK 12LL diode

    Abstract: M5M5V208FP m5m5v208 SMD a16 Transistor 2097152-BIT
    Text: MITSUBISHI LSIs '97.3.21 M5M5V208FP,VP,RV,KV,KR -70L , -85L, -10L , -12L, -70LL, -85LL, -10LL, -12LL 2097152-BIT 262144-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance


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    M5M5V208FP -70LL, -85LL, -10LL, -12LL 2097152-BIT 262144-WORD M5M5V208 152-bit 144-words MARK 12LL diode SMD a16 Transistor 2097152-BIT PDF

    smd transistor A6

    Abstract: SMD a6 Transistor IS852 smd transistor A6 3 E91231 a6 smd transistor smd 4-pin DUAL DIODE
    Text: IS852 IS852X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 2.54 'X' SPECIFICATION APPROVALS 7.0 6.0 l VDE 0884 in 3 available lead form : - STD - G form FEATURES l Options :10mm lead spread - add G after part no.


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    IS852 IS852X E91231 100mA DB92688m-AAS/A6 smd transistor A6 SMD a6 Transistor IS852 smd transistor A6 3 E91231 a6 smd transistor smd 4-pin DUAL DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: HS-6664RH-T Semiconductor December 1998 Data Sheet File Num ber Radiation Hardened 8 K x 8 CMOS PROM Features Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    HS-6664RH-T 100kRAD MIL-PRF-38535 HS-6664RH-T 1-800-4-HARRIS PDF

    HM1-65262-9

    Abstract: No abstract text available
    Text: HARRIS S E M ICON SECTOR f Ì> H U U S E M I C O N D U C T O R A R R MbE D • M3G2271 DD3Tlb7 5 * H A S HM-65262 I S 2 3 - 0 5 1 6 K x 1 Asynchronous CMOS Static RAM January 1992 Pinouts Features Fast A ccess T im e . . 70/85nsM ax


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    M3G2271 HM-65262 70/85nsM HM1-65262-9 PDF

    Untitled

    Abstract: No abstract text available
    Text: ACS05MS Semiconductor N o vem ber 1998 D ata S h eet Radiation Hardened Hex Inverter with Open Drain Outputs The Radiation Hardened ACS05MS is a Hex Inverter with open drain outputs. This device inverts a HIGH level on each input to a LOW level on the corresponding Y output. A LOW


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    ACS05MS ACS05MS MIL-PRF-38535 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: ACTS541T D a ta s h e e t Ju ly 1999 Radiation Hardened Octal Three-State Buffer/Line Driver Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    ACTS541T 100kRAD MIL-PRF-38535 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: ACTS541T Semiconductor January 1999 Data Sheet Radiation Hardened Octal Three-State Buffer/Line Driver Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    ACTS541T 100kRAD MIL-PRF-38535 1-800-4-HARR PDF

    Untitled

    Abstract: No abstract text available
    Text: ACTS245T Semiconductor January 1999 Data Sheet Radiation Hardened Octal Non-inverting Bidirectional Bus Transceiver Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended


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    ACTS245T 100kRAD MIL-PRF-38535 1-800-4-HARR PDF

    Untitled

    Abstract: No abstract text available
    Text: ACTS245T July 1999 Data Sheet Radiation Hardened Octal Non-inverting Bidirectional Bus Transceiver Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended


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    ACTS245T 100kRAD MIL-PRF-38535 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: HCTS245T Data Sheet July 1999 Radiation Hardened Octal Bus Transceiver, Three-State, Non-inverting Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    HCTS245T 100kRAD MIL-PRF-38535 HCTS245T 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: HCTS245T Semiconductor D ecem b er 1998 D ata S h eet Radiation Hardened Octal Bus Transceiver, Three-State, Non-inverting Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    HCTS245T 100kRAD MIL-PRF-38535 1-800-4-HARR PDF

    Untitled

    Abstract: No abstract text available
    Text: HCTS245T Semiconductor D e c e m b e r 1998 D a ta S h e e t Radiation Hardened Octal Bus Transceiver, Three-State, Non-inverting H arris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    HCTS245T 100kRAD HCTS245T 1-800-4-HARR PDF