ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology
Abstract: No abstract text available
Text: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA [email protected] Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have
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01AC09
ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology
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ATA6026
Abstract: ATA6026-PHQW JESD78 QFN32
Text: Features • PWM and Direction-controlled Driving of Four Externally Powered NMOS Transistors • Internal Charge Pump Provides Gate Voltages for High-side Drivers in Permanent ON Mode and Supplies the Gate of the External Battery Reverse Protection NMOS • 5V Regulator With External Power Device NPN and Current Limitation Function
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4865C
ATA6026
ATA6026-PHQW
JESD78
QFN32
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Untitled
Abstract: No abstract text available
Text: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has
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Untitled
Abstract: No abstract text available
Text: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320
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Untitled
Abstract: No abstract text available
Text: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA [email protected] Thin silicon nitride Si3N4 films deposited using plasma-enhanced
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300oC,
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2SC3465
Abstract: TRANSISTOR Outlines DDD4443 OCQ4444
Text: sanyo Sem icon ducto r 12E D I corp TTTPDTfc. 000444c! U | T -s¿-/ár 2SC3465 NPN Triple Diffused Planar Silicon Transistor 2017 Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed t^>: 0.1us typ.
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2SC3465
0QD444S
PW-300us
0DGB752
2SC3465
TRANSISTOR Outlines
DDD4443
OCQ4444
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L1606
Abstract: a 1201 sanyo 2SD1837
Text: SANYO SEM IC ON D UC TOR CORP 1HE D I ? tiT?Q?b DDDSEb4 2SD1837 T-33-2041 NPN Planar Silicon Darlington Transistor Driver Applications 2231A Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers Features
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2SD1837
T-33-
B1252
0DGB752
L1606
a 1201 sanyo
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1s126a
Abstract: 2SD1837 1S126
Text: SANYO SEM IC ON D UC TOR CORP 1HE D I ? tiT?Q?b DDDSEb4 T-33- 2SD1837 2041 NPN Planar Silicon Darlington Transistor Driver Applications 2231A Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers Features
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2SD1837
T-33-NPN
IS-126
1S-126A
IS-20MA
1s126a
2SD1837
1S126
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2SC2210
Abstract: 374F
Text: 1SE DI 7Ti7D7t. □□□4150" T SANYO SEM ICO NDUCTOR CORP 2SC2210 2003A NPN Epitaxial Planar Silicon Transistor AM R F Am p, Converter Applications 374F Features . Highly resistant to dielectric breakdown and suited for car use. . Good spurious characteristic due to low f<j>.
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2SC2210
B1252
2SC2210
374F
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Untitled
Abstract: No abstract text available
Text: 1SE DI 7Ti7D7t. □□□4150" T SANYO SEM ICO NDUCTOR CORP 2SC2210 2003A NPN Epitaxial Planar Silicon Transistor AM R F Am p, Converter Applications 374F Features . Highly resistant to dielectric breakdown and suited for car use. . Good spurious characteristic due to low f<j>.
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2SC2210
IS-126
1S-126A
IS-20MA
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2052A
Abstract: SILICON TRANSISTOR FS 2025
Text: SANYO SEM ICONDUCTO R IS E CORP D 2SK778 N -Channel M O S Silicon Field-Effect Transistor 2052A 2562 7 T i 7 G 7 t. □DGSMbS 1 T-Sl-oV Very High Speed Switching Applications Features . Low ON resistance, very high-speed switching Absolute Haxlaua Ratings at Ta=25°C
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2SK778
20VfVDs
IS-126
1S-126A
IS-20MA
IS-313
IS-313A
2052A
SILICON TRANSISTOR FS 2025
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Untitled
Abstract: No abstract text available
Text: D • SbMEEm MA42140 Series Description □ □ □ 1 4 4 fl m/a-com T H MIC \ Silicon Low Noise Bipolar Transistor t 31-17 sem icondtBrlngton - Nominal fT - 4.5 GHz Nominal Current Range - 1 to 10 mA Ip Max. - 50 mA Frequency Range - 300 MHz to 2.0 GHz Geometry - 63
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MA42140
MA42141
MA42142
MA42143
2N5651
2N5662
MIL-STD-750
cycles-65
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2005A
Abstract: VEBO-15V 2SC4389 PA 2027A TRANSISTOR IFW IC3100
Text: SANYO SEMICONDUCTOR [-W-'-s " -«?*'/? 6,/îj1 L:'~~~ CORP | 32E 7 cH 7 0 7 fcj O O C H l l l • 2006A —« -• • - D 2 E3 T -2 ? -2 3 N P N Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications 2957 Features
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h707fci
T-2f23
T-91-20
SC-43
2005A
VEBO-15V
2SC4389
PA 2027A
TRANSISTOR IFW
IC3100
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SS9014
Abstract: No abstract text available
Text: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 • High total power dissipation. PT=450mW • High hFE and good linearity • Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Symbol Collector-Base Voltage
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SS9014
450mW)
SS9015
SS9014
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ATI Research
Abstract: MIL-STD-750b
Text: Reliability of semiconducto in a sta b ilized condition. T he ab ility of p ro d u c tion p ro cesses is confirm ed and p rio rity item s a re estab lish ed to rea lize ideal pro cess control, th u s p av in g th e w ay fo r su b se q u en t m ass p ro
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168Hrs
500Hre
2SK643
500H-S
100n-
500Hrs
700650J,
ATI Research
MIL-STD-750b
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Untitled
Abstract: No abstract text available
Text: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE T O -9 2 • High total pow er dissipation. PT=450mW • High hpE and good linearity • C om plem entary to S S 9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol
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SS9014
450mW
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transistor jt
Abstract: M558-01 M-558
Text: MOTOROLA 6367254 SC MOTOROLA ÍX ST R S /R SC F> Tb D Ë J bBbVSSM 0005412 D 96D 8 2 4 1 2 <X S T R S / R F - M A X I M U M R A T IN G S Sym bol Value Unit V C EO 60 Vdc Coltector-Base Voltage VC B 60 Vdc Emitter-Base Voltage V e b 5.0 Vdc ic 600 mAdc Rating
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M558-01
M558-02
M558-02
558-02Total
Mil-Std-750,
MH-Std-750,
transistor jt
M-558
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Untitled
Abstract: No abstract text available
Text: Ordering number :EN 2420B _._ 2SB1131 NO.2420B PN P Epitaxial Planar Silicon Transistor SA\YO Strobe, High-Current Switching _ Applications Applications . Strobes, power supplies, relay drivers, lamp drivers Features . . . .
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2420B
2SB1131
8270MH/5217TA,
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2SD1981
Abstract: Sicc 4227ta
Text: Ordering number : EN 2 5 3 4 No.2534 SANYO _ 2SD1981 NPN Epitaxial Planar Silicon Darlington Transistor Driver Applications Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection on-chip bias resistance, damper diode
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2SD1981
Sicc
4227ta
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IR 2353
Abstract: 2SD1854
Text: Ordering number: EN 2353 ‘ 2SD1854 No.2353 SANYO- N P N Epitaxial Planar Silicon Darlington Transistor i Driver Applications Applications Motor drivers, hammer drivers, relay drivers Features . High DC current gain . Darlington connection Absolute Maximum Ratings at Ta=25°C
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2SD1854
IR 2353
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2005A
Abstract: 2SC4002
Text: Ordering num ber: EN 2 9 6 0 r. 2SC4002 No.2960 S AïYOi NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F e a tu re s . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity A b so lu te M axim um R atin g s at Ta = 25°C
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2SC4002
2034/2034A
SC-43
7tlt17D7b
2005A
2SC4002
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 1857B 2SA 1438 N 0.1857B I PN P Epitaxial P lanar Silicon Transistor SA I YO i H igh hpE, Low-Frequency General-Purpose Amp Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of MBIT process
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1857B
VgB0-15V)
rO-92
3C-43
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2SA1802
Abstract: 2SC4681
Text: TOSHIBA 2SA1802 2 S A 1 802 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • Excellent hEE Linearity : hFE l = 200-600 (Vce = -2 V , Ic = -0 .5 A) : hFE (2) = 140 (Min.) (VCE = -2 V , IC = - 3 A)
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2SA1802
2SC4681
2SA1802
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2SC3779
Abstract: U40j 2SC3779 transistor
Text: Ordering number : EN 1954C 2SC 3779 NPN Epitaxial Planar Silicon Transistor S A \ Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . OHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NF=1.5dB typ f=0.9GHz . . High power gain: MAG*l4dB typ(f=0.9GHz).
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1954C
2SC3779
SC-51
rO-92
3C-43
2SC3779
U40j
2SC3779 transistor
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