Untitled
Abstract: No abstract text available
Text: TLP291 SE TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP291(SE Power Supplies Programmable Controllers Hybrid ICs Unit: mm TLP291(SE consists of photo transistor optically coupled to a gallium arsenide infrared emitting diode. TLP291(SE is housed in the SO4 package, very small and thin coupler.
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TLP291
3750Vrms)
11-3C1
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Untitled
Abstract: No abstract text available
Text: TLP290 SE TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP290(SE Programmable Controllers AC/DC-Input Module Hybrid ICs Unit: mm TLP290(SE consist of photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and can operate
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TLP290
3750Vrms)
11-3Citation,
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se
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XN04390
UNR212X
UN212X)
UNR2223
UN2223)
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2N3635
Abstract: No abstract text available
Text: 2N3635 GENERAL PURPOSE TRANSISTOR PNP SILICON 6.95 Tra. 1 of 1 Home Part Number: 2N3635 Online Store 2N3635 Diodes G ENERAL PURPO SE TRANSISTO R ( PNP SILIC O N) Transistors Enter code INTER3 at checkout.*
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2N3635
com/2n3635
2N3635
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Untitled
Abstract: No abstract text available
Text: BCX71H PNP EPITAXIAL SILICON TRANSISTOR G EN ERAL PURPO SE TRANSISTOR ABSO LUTE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Sym bol
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BCX71H
KST5086
-50mA
-10mA,
-50mA,
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BUK552
Abstract: BUK552-60A BUK552-60B T0220AB 42e0 TSLA
Text: PHILIPS INTERNATIONAL b SE ]> B 7110fiSb 00b421b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK552-60A/B
T0220AB
BUK552
BUK552-60A
BUK552-60B
T0220AB
42e0
TSLA
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BUK637-400A
Abstract: BUK637-400B P02S
Text: N AMER PHILIPS/DISCRETE E SE D ^53=131 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable
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BUK637-400A
BUK637-400B
BUK637
-400A
-400B
BUK637-400B
P02S
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DIODE T25 4 EO
Abstract: B44 transistor 711002b BUK456-60H T0220AB PHILIPS fw 373
Text: fc,SE i> PHILIPS INTERNATIONAL m 711Qfl2b QObMlll b4H « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711002b
BUK456-60H
T0220AB
DIODE T25 4 EO
B44 transistor
BUK456-60H
T0220AB
PHILIPS fw 373
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-200A/B GENERA L D ESCRIPTIO N N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope. The device is intended for u se in Switched
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BUK455-200A/B
BUK475-200A/B
BUK475
-200A
-200B
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it4142
Abstract: it414 BCX71H MMBT5086
Text: S A MS UN G SE MIC OND UCT OR INC BCX71H IME D | 0GQ7225 M | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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t4142
BCX71H
MMBT5086
OT-23
it4142
it414
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BUK446
Abstract: BUK446-1000A transistor k446 BUK446-1000B k446 diode t25 4 L0
Text: N AMER PHILIPS/DISCRETE 2 SE D • bbS3131 Q02042S M PowerMOS transistor BUK446-1000A BUK446-1000B T - 3 7 - 0 ? GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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bbS3131
Q02042S
BUK446-1000A
BUK446-1000B
T-37-Ã
BUK446
-1000A
-1000B
transistor k446
k446
diode t25 4 L0
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BUK627-450B
Abstract: tic 120 TIC 220
Text: N A ME R PHILIPS/DISCRETE 2 SE D • bbS3T31 OQSObSS PowerMOS transistor Fast Recovery Diode FET b ■ BUK627-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery
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BUK627-450B
BUK627-450B
tic 120
TIC 220
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mj6503 motorola
Abstract: MJ6503 mj6503 transistor MJ6502 MARK B3L MJ-6503
Text: MOTOROLA SC X S TR S /R F 1 SE D I b 3b ? 2 S4 QQÖMTÖS 2 | MOTOROLA SEMICONDUCTOR MJ6503 TECHNICAL DATA D e siS’ruM's D ata Sheet 8 AM PERE PNP SIUCON POWER TRANSISTOR SWITCHMODE SERIES PNP SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The MJ6503 transistor is designed for high-voltage, high-speed,
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MJ6503
MJ6503
mj6503 motorola
mj6503 transistor
MJ6502
MARK B3L
MJ-6503
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transistor code 274
Abstract: CXT3019
Text: centrar C X T3019 Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C TO R CXT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose
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CXT3019
OT-89
150mA
500mA
transistor code 274
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BUK454
Abstract: BUK454-400A BUK454-400B T0220AB
Text: 2 SE D N AMER PHI LIP S/DISCRET E ^53*131 ODSQMbO 2 BUK454-400A BUK454-400B PowerMOS transistor r - 3?-n GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK454-400A
BUK454-400B
BUK454
-400A
-400B
T0220AB;
T0220AB
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BUK545-50A
Abstract: 1E05 BUK545 BUK545-50B
Text: N AMER PHILIPS/DISCRETE 5 SE D • fc.hS3T31 DDEOSTQ 4 ■ PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r - 3 7 -< 0 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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h53T31
BUK545-50A
BUK545-50B
BUK545
ID/100
1E05
BUK545-50B
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buk453
Abstract: BUK453-100B a1w* transistor SL 100B BUK453-100A T0220AB Ha 100b A1W TRANSISTOR
Text: N AMER PHILIPS/DISCRETE 2 SE D • b b 5 3 ,i31 0G204S0 T ■ PowerMOS transistor BUK453-100A BUK453-100B T -3<i-\i GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK453-100A
BUK453-100B
T-31-II
BUK453
-100A
-100B
-ID/100
BUK453-100B
a1w* transistor
SL 100B
T0220AB
Ha 100b
A1W TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR M ODULES QM30TB-2H MEDIUM POW ER SWITCHING U SE INSULATED TYPE • Ic • Vcex Collector current. 30A Collector-emitter voltage. 1000V DC current gain. 75 • hFE • Insulated Type
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QM30TB-2H
E80276
E80271
C-600V
4571CH
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BUK455-500A
Abstract: BUK455-500B RFTN-1 BUK455 25KW T0220AB
Text: N AMER PHI LI PS /D ISCR ET E 2 SE D o a a D s iD a BUK455-500A BUK455-500B PowerMOS transistor T “ £ 7 - IS GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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T-37-IS
BUK455
-500A
-500B
T0220AB;
BUK455-500A
BUK455-500B
RFTN-1
25KW
T0220AB
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2N3441
Abstract: transistor 7150 booc power transistors 7150 Transistor
Text: 2N3441 NPN Power transistor for AF amplifiers and switching applications 2 N 3 4 4 1 is a sin g le -d iffu se d N P N silic o n transistor in a T O - 6 6 case. T h e collector is electrically co n n e c te d to the case. T h e transistor 2 N 3 4 4 1 is particularly suitable for
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2N3441
Q62702-D
Q62902-B
Q62902-B11-B
2N3441
transistor 7150
booc power transistors
7150 Transistor
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Untitled
Abstract: No abstract text available
Text: j SAM SUNG SE M IC O N D U C T O R INC MPSL01 14E D | 7 ^ 1 4 3 00073^0 â J 'T NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em lttsr V ilta fl« : Vcio=120V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MPSL01
625mW
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philips ID 27
Abstract: hjb surface mount 100-P BUK482-60A
Text: PHILIPS INTERNATIONAL b SE T> • ?HDa2b DObmt.3 Philips Semiconductors N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device Is intended for use in automotive and general purpose
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BUK482-60A
OT223
711DfiSb
OT223.
35\im
philips ID 27
hjb surface mount
100-P
BUK482-60A
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Untitled
Abstract: No abstract text available
Text: SE M IC O N D U C T O R 2N5550S TECHN ICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. L B L D IM FEATURES • High Collector Breakdwon Voltage 2.93 ± 0.20 B 1.3040.20/-0.15 C : Vcbo=160V, Vceo=140V • Low Leakage Current.
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2N5550S
Ic-50mA
100MHz
300/iS,
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BUZ90A
Abstract: T0220AB K 3911
Text: PowerMOS transistor N AMER P H I L I P S / D I S C R E T E ObE BUZ90A. D 1^53=131 OOm SEÔ 2 • T -3 ^ 1 1 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ90A.
bbS3131
T0220AB;
0014S34
BUZ90A
T-39-11
BUZ90A
T0220AB
K 3911
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