MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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12vdc motor forward reverse control diagram
Abstract: star delta wiring diagram motor start y VFAS1 igbt based induction furnace circuit diagram toshiba electric motor data sheet 90kW treadmill motor controller free circuit diagram of treadmill 5kw inverter circuit diagram 12-pulse induction furnace diagram wiring mitsubishi elevator
Text: Transistor Inverter High-performance Inverter TOSVERT Flexible for you For your Commercial facilities, offices and factories • Feature: Reduce high-frequency noise*1, Reduce harmonics*1 • Applications: Washing machines, Treadmill, Showcase refrigerators, Medical equipment,
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TPC6103
Abstract: 2A103
Text: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)
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TPC6103
TPC6103
2A103
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TPC6103
Abstract: No abstract text available
Text: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)
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TPC6103
TPC6103
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TPC6103
Abstract: No abstract text available
Text: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) · High forward transfer admittance: |Yfs| = 13 S (typ.)
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TPC6103
TPC6103
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TPC6103
Abstract: No abstract text available
Text: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)
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TPC6103
TPC6103
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Untitled
Abstract: No abstract text available
Text: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)
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TPC6103
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transistor 2sc5353
Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000
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DP0540001
200kHz
200kHz
280ns
transistor 2sc5353
2sa2035
TRANSISTOR SMD 13W
HA2003
Bjt 60 w 600v .5A
pnp transistor 800v
TPC6D02
VS6 SOT23
400V dvc to 5V DC Regulator
MSTM TOSHIBA
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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TPC6103
Abstract: No abstract text available
Text: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)
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TPC6103
TPC6103
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Untitled
Abstract: No abstract text available
Text: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)
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TPC6103
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Untitled
Abstract: No abstract text available
Text: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)
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TPC6103
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germanium transistor pnp
Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
Text: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies
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WiOO/25A
2N240
uG-491A/U,
MIL-S-19500/25B
15SUE.
10UAL
germanium transistor pnp
GERMANIUM TRANSISTOR
2N240
S236
de-01 germanium transistor
boonton 91-6c
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transistor c1850
Abstract: Samsung tv remote control circuit diagram k27 transistor KS5191 D560 transistor SMCS-51 S3C1850 C1850 transistor k58
Text: 2. S3C1850 S3C1850 DESCRIPTION S3C1850, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. Eight input pins and 11 output pins provide the flexibility for various I/O requirements. Auto reset circuit generates reset pulse every certain period, and every halt mode termination time. The S3C1850
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S3C1850
S3C1850,
SMCS-51
S3C1850
fxx/12
S3C1840/C1850/C1860/P1860
0800h
transistor c1850
Samsung tv remote control circuit diagram
k27 transistor
KS5191
D560 transistor
C1850
transistor k58
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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S3C2410A-20
Abstract: S3C2410A26 S3C2410A-26 S3C2410A20 S3C2410A 272-FBGA uart protocol touch screen Internal ROM Booting TOUCH SCREEN MCU ARM920T
Text: S3C2410A 1 PRODUCT OVERVIEW PRODUCT OVERVIEW INTRODUCTION This manual describes SAMSUNG's S3C2410A 16/32-bit RISC microprocessor. This product is designed to provide hand-held devices and general applications with cost-effective, low-power, and high-performance microcontroller solution in small die size. To reduce total system cost, the S3C2410A includes the following
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S3C2410A
S3C2410A
16/32-bit
10-bit
64-Byte
64-Byte)
200MHz
S3C2410A-20)
266MHz
S3C2410A-20
S3C2410A26
S3C2410A-26
S3C2410A20
272-FBGA
uart protocol touch screen
Internal ROM Booting
TOUCH SCREEN MCU
ARM920T
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Samsung tv remote control circuit diagram
Abstract: C185 transistor k54 KS5191 S3C1860 S3P1860 SMCS-51 transistor k52 S3C1840
Text: 3. S3C1860 S3C1860 DESCRIPTION S3C1860, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. The S3C1860 is the microcontroller which has 1024 bytes mask-programmable ROM. The S3P1860 is the microcontroller which has 1024 bytes one-time-programmable EPROM. In the S3P1860, the
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S3C1860
S3C1860,
SMCS-51
S3C1860
S3P1860
S3P1860,
S3C1840/C1850/C1860/P1860
0800h
Samsung tv remote control circuit diagram
C185
transistor k54
KS5191
transistor k52
S3C1840
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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EZ 707
Abstract: 2SC3544 EZ 0710 EZ 728
Text: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry
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NE944
EZ 707
2SC3544
EZ 0710
EZ 728
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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TRANSISTOR S3C
Abstract: DIODE S3c S3C marking
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U—MOSIII NOTE BOOK PC APPLICATIONS PORTABLE EQUIPMENTS APPLICATIONS TPC6103 UNIT:mm •Low Drain - Source ON Resistance : R DS(oN)= 29mQ(Typ.) • High Forward Transfer Admittance : | Y f s | = 13 S (Typ.)
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TPC6103
-10/zA
TRANSISTOR S3C
DIODE S3c
S3C marking
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1736d
Abstract: No abstract text available
Text: 6DI75M-050 75A 'U ± '< h - y < 7 _ Y = 7 > '> ^ ^ ì>d. - ì V l £ f ' :£ ï > d , - ) v O utline Draw ings POWER TRANSISTOR MODULE F e a tu r e s • f f ih FE H igh DC C u rre n t Gain • H ig h S peed S w itc h in g : A p p lic a tio n s • ? G eneral P urpose Inverter
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6DI75M-050
e9Ti30S3
1736d
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