Untitled
Abstract: No abstract text available
Text: SRA2212M PNP Silicon Transistor PIN Connection Descriptions • Sw it ching applicat ion OUT • I nt erface circuit and driver circuit applicat ion Features IN • Wit h built- in bias resist or • Sim plify circuit design • Reduce a quant it y of part s and
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SRA2212M
KSD-R0B021-000
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rogers* 4403
Abstract: rogers 4403 HMC454 HMC454ST89
Text: V00.1004 PRODUCT APPLICATION NOTE Designing with the HMC454ST89 Amplifier Utilizing Small Signal S-parameters General Description The HMC454ST89 is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor HBT ½ watt MMIC amplifier operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain
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HMC454ST89
typically17
40dBm
rogers* 4403
rogers 4403
HMC454
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IC 74032
Abstract: IC 7403 datasheet IC 7403 2SA1745 CPH6516 ITR10434 ITR10435 ITR10436 ITR10437 ITR10438
Text: Ordering number : ENN7403 CPH6516 PNP Epitaxial Planar Silicon Composite Transistor CPH6516 Low-Frequency General-Purpose Amplifier Applications • unit : mm 2212 [CPH6516] B2 5 0.2 4 0.6 6 0.05 Electrical Connection C1 0.15 2.9 2.8 • Composite type with 2 transistors and in the CPH
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ENN7403
CPH6516
CPH6516]
CPH6516
2SA1745,
IC 74032
IC 7403 datasheet
IC 7403
2SA1745
ITR10434
ITR10435
ITR10436
ITR10437
ITR10438
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PDF
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CPH6517
Abstract: marking 3B 7385 2SC4555 ENN7385 ITR10442 ITR10443 ITR10444 ITR10445 ITR10446
Text: Ordering number : ENN7385 CPH6517 NPN Epitaxial Planar Silicon Composite Transistor CPH6517 Low-Frequency General-Purpose Amplifier Applications • unit : mm 2212 [CPH6517] B2 5 0.05 1 E2 2 3 0.95 0.7 0.9 TR2 TR1 0.4 Top view B1 E1 0.2 4 0.6 6 Electrical Connection
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ENN7385
CPH6517
CPH6517]
CPH6517
2SC4555,
marking 3B
7385
2SC4555
ENN7385
ITR10442
ITR10443
ITR10444
ITR10445
ITR10446
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PDF
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Application Hint 20
Abstract: direct pm modulation circuit SSB Modulator iqdc Siemens Halbleiter
Text: ICs for Communications Mixer DC - 1.6GHz and Vector Modulator with AGC 1.4-1.6GHz PMB 2212 Specification 05.99 GLWLRQ 3XEOLVKHG E\ 6LHPHQV $* %HUHLFK +DOEOHLWHU 0DUNHWLQJ .RPPXQLNDWLRQ %DODQVWUDH 0QFKHQ Siemens AG 1995. All Rights Reserved.
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445GHz,
100kHz
-10dBm,
441GHz,
10kHz
Application Hint 20
direct pm modulation circuit
SSB Modulator
iqdc
Siemens Halbleiter
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PDF
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ic 7475
Abstract: 2SA1813 CPH6520 ITR10596 ITR10597 ITR10598 ITR10599 marking 3G VEBO-15V
Text: Ordering number : ENN7475 CPH6520 PNP Epitaxial Planar Silicon Composite Transistor CPH6520 Low-Frequency General-Purpose Amplifier, Drivers Applications • • • unit : mm 2212 [CPH6520] 5 4 0.6 6 0.2 0.15 2.9 0.05 2.8 • Composite type with 2 transistors contained in the
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ENN7475
CPH6520
CPH6520]
CPH6520
2SA1813,
VEBO15V)
ic 7475
2SA1813
ITR10596
ITR10597
ITR10598
ITR10599
marking 3G
VEBO-15V
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PDF
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transistor 626
Abstract: BU626A transistor d 2213 Q68000-A4984
Text: 2SC D • 02 35b G S GDOMflHi S IE Û & BU 626 A NPN Silicon Power Transistor '-3 3 -/ 3 SIEM EN S A K T IE N G E S E L L S C H A F BU 626 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is
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0235bGS
Q68000-A4984
fi235bOS
transistor 626
BU626A
transistor d 2213
Q68000-A4984
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Untitled
Abstract: No abstract text available
Text: 2SD2212 / 2SD2143 / 2SD1866 / 2SD1764 2SD1856 Transistors Medium Power Transistor Motor relay or Solenoid drive I 2SD 2212 / 2SD 2143 / 2SD1866 / 2SD 1764 •F e a tu re s 1) 2) 3) 4 ) Built-in Strong Built-in Built-in •A b s o lu te maximum ratings (T a = 2 5 't )
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2SD2212
2SD2143
2SD1866
2SD1764
2SD1856
2SD2212
2SD2143
2SD1866
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Untitled
Abstract: No abstract text available
Text: ISOCOM COMPONENTS LTD 45E D • HfiûbSlO 0DÜD5Ô2 T « I S O | S F H 60 0-0X, S F H 60 0-1X, S F H 60 0 -2 X, S F H 6 0 0-3 X, S F H 600-4 X *iti ii; j. ¡jij • I. H l’iif '1'>•?• SM *-*’. | ISOCOM Hi OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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KD224503HB
Abstract: KS624550 powerex kd kd2245 kd2212 kd221K kd62 kd424520hbaa ks52 ksf220
Text: POÙJEREX I NC b4E D • 000LSS3 S^S « P R X m t/BÍEX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 HIGH-BETA DARLINGTON TRANSISTOR MODULES
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000LSS3
BP107,
KS524503H
KSF22005
KD224503HB
KS624550
powerex kd
kd2245
kd2212
kd221K
kd62
kd424520hbaa
ks52
ksf220
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PDF
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2sd1764
Abstract: 2SD1856 transistors 2sd 2500
Text: 2SD2212 / 2SD2143 / 2SD1866 / 2SD1764 2SD1856 Transistors I Medium Power Transistor Motor relay or Solenoid drive 2SD 2212 / 2SD 2143 / 2SD 1866 / 2SD 1764 •F e a tu re s 1 ) Built-in zener diode between coHector and base. 2 ) Strong protection against reverse surges due to low loads.
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2SD2212
2SD2143
2SD1866
2SD1764
2SD1856
-220PP
2SD1856
transistors 2sd 2500
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G eneral Purpose Transistor BCW72LT1 NPN Silicon COLLECTOR 3 % 2 EMITTER MAXIMUM RATINGS 2 C A S E 3 18-0 8, S T Y L E 6 Rating C ollector-E m itter Voltage Sym bol Value Unit VCEO 45 Vdc C ollector-Base Voltage v CBO
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BCW72LT1
--236AB)
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Untitled
Abstract: No abstract text available
Text: 45E D ISOCOM COMPONENTS LTD • MflfibSlO □□□□274 T « I S O . IS 204X I»},.lu,■K-'n»."s *«»»■■g».$'ji 'r * v H » ^ ^ ^ ^ I* .i£ ï OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT DESCRIPTION The IS 204X is a optically coupled isolator consisting
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d2396
Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .
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2SK2503
RK7002
TC363TS
DTC314TS
TC114G
100mA
TA124G
DTC144G
d2396
TRANSISTOR PNP B1443
D2396 equivalent
B1569A
TRANSISTORS PNP 50 V 1 A B1443
B1186A
transistor c5147
b1344
transistor equivalent b1443
K2460
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MPS901
Abstract: TDB O 117 SP BR901 MMBR901LT1 RF901 MMBR901
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor Designed prim arily for use in high-gain, low -noise s m all-signal am plifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.
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MRF9011LT1)
MMBR901
MMBR901LT1,
MRF901
MPS901
MRF9011LT1
TDB O 117 SP
BR901
MMBR901LT1
RF901
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PDF
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Untitled
Abstract: No abstract text available
Text: 45E D ISOCOM COMPONENTS LTD L X >!• 'Û S ■ MfifibSlO 0 0 GD570 2 m i S O IS-201X, IS-202X, IS-203X, Hn, ¡-a"" f i 11 ft *1 ' Ml1;'1’!!1' ‘i i W ' M “» ,Vi-i! H f M ^ W "’WÜ-tiENil 'li 11 »*»■ OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT
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GD570
IS-201X,
IS-202X,
IS-203X,
IS201X
IS202X
IS203X
IS-203X
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Untitled
Abstract: No abstract text available
Text: 4SE » ISOCOn COMPONENTS LTD • T ^ -Ì5 4flflb510 0000312 3 « I S O MOC 8080X 1 »ff ft,'Uiußib^k kCB » I‘4~>'■ / 'f W V ”> \ ■^ ^ « " V * - ! . p ^ ^ .: 1! ' . J|^à^p ^ p .». MffVI ■ SlP ?M OPTICALLY COUPLED ISOLATOR DARLINGTON TRANSISTOR OUTPUT
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4flflb510
8080X
8080X
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Untitled
Abstract: No abstract text available
Text: I l4flflb51D 0 0 0 0 2 ^ 0 û • ISO MSE D IS OC OM C O M P O N E N T S LTD IS 205X, IS 206X~ '•»t.ïSïS <¿5 ism oM OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT PACKAGE DIMENSIONS IN MM DESCRIPTION The IS205X, IS206X are optically coupled isolators
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4flflb51D
IS205X,
IS206X
IS206X
10mAf
VCE-10V
-100R,
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PDF
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D-42
Abstract: KD221275A7 reverse forward control diagram KD221K75 kd221275a kd2212
Text: mmn sK KD 221275A 7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DUcil DdfHnCjtOn T ran sis to r M o d u le 75 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD221275A7
Amperes/1200
D-42
KD221275A7
reverse forward control diagram
KD221K75
kd221275a
kd2212
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PDF
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BP107
Abstract: ID221205 Scans-007799
Text: POWEREX INC m 3=JE D t /a ta c • 7 2 1 4 b 2 1 0DG47Ô7 fi mP RX _ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 ID 221205
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0DG47Ã
ID221205
BP107,
Amperes/1200Volts
ID221205
Amperes/1200
428AvenueG.
BP107
Scans-007799
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PDF
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1I101
Abstract: 0to125 powerex nd
Text: P O UJ E RE X 3=1E D INC • 7 2 ^ 2 1 mmwEX. OGGMTD? 3 *P R X IQ 221205 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S. A. 428 A venue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 ' f-Z l'Z L Chopper IGBTMOD
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OCR Scan
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BP107,
Amperes/1200
1I101
0to125
powerex nd
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PDF
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Untitled
Abstract: No abstract text available
Text: <WEHEX KD221203 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U dl DdrHflQtOfl Transistor Module 30 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD221203
Amperes/1200
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PDF
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Untitled
Abstract: No abstract text available
Text: POUEREX INC 3RE D • 73^21 OO OMlTb 1 B P R X T - 3 3 - J S " m Ê Ê B Œ KD221205HB X Po w e rex, Inc., Hlllis Street, Youngw ood, Pennsylvania 15697 41 Z 925-7272 Powerex Europe, S.A., 4 2 8 Avenue G. Durand, B P 1 0 7 ,72003 Le Mans, France (4 3 )4 1 .1 4 .1 4
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KD221205HB
Amperes/1200
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PDF
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