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    TRANSISTOR R 53 Search Results

    TRANSISTOR R 53 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R 53 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5367

    Abstract: AH TRANSISTOR
    Text: 2N5367 R PNP SILICON TRANSISTOR TO-92B DESCRIPTION 2N 5367(R ) transistor is PNP use- in silicon general planar purpose consumer and industrial am plifier and switch i n g app 1ica t ioils . ABSOLl TÍ MAXIMUM RATINGS -Huge Ct>Ilecti >r-E'i n r '.<•*' 32V


    OCR Scan     		PDF 2N5367 O-92B 300mA 360mW IB50mA AH TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE fc.fc.53131 0015233 3 OLE » RZB12100Y L r-s s - i< r PULSED MICROW AVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications, It operates in pulsed conditions only and is recommended fo r IFF applications.


    OCR Scan     		PDF RZB12100Y bb53T31

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 0inE D ^53*131 0D1S5A7 □ RZB12250Y r- %-*>'- s' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.


    OCR Scan     		PDF RZB12250Y 100ps;

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear


    OCR Scan     		PDF DD3T433 BLW83

    Untitled

    Abstract: No abstract text available
    Text: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to


    OCR Scan     		PDF DD1411L BLY87A

    Transistor TT 2144

    Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
    Text: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).


    OCR Scan     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 Transistor TT 2144 Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09

    RX1214B300Y

    Abstract: No abstract text available
    Text: N AMER PH ILIP S/D ISCRETE ObE D ^53131 GOlSlô'ï □ • RX1214B300Y t r ^ 3 3 - / r PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor fo r use in common-base, class-C wideband amplifiers operating under pulsed conditions. It is recommended for L-band radar applications.


    OCR Scan     		PDF RX1214B300Y D01S113 RX1214B3 RX1214B300Y

    h a 431 transistor

    Abstract: transistor w 431 RZB12250Y transistor 431 N
    Text: N AMER PHILIPS/DISCRETE ObE D • ^53=131 OD1S5Ô7 D ■ RZB12250Y r - 'iZ '-is ' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.


    OCR Scan     		PDF RZB12250Y h a 431 transistor transistor w 431 RZB12250Y transistor 431 N

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    TRANSISTOR BI 243

    Abstract: vhf linear pulse power amplifier aanr BLV31 capacitor 224 J 332 DISC CAPACITOR d 331 Transistor WP380
    Text: t.SE D PHILIPS INTERNATIONAL • 711ÜÔEb DGfc.EBb3 534 IPHIN BLV31 V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers. Diffused em itter ballasting resistors and the application o f


    OCR Scan     		PDF BLV31 711002b 00b2671 7Z83384 7Z83385 7Z83386 TRANSISTOR BI 243 vhf linear pulse power amplifier aanr BLV31 capacitor 224 J 332 DISC CAPACITOR d 331 Transistor WP380

    UN 2911

    Abstract: No abstract text available
    Text: ¡si H a r r i <33 semiconductor HFA3046, HFA3096, HFA3127, HFA3128 s Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT .8GHz • NPN Current Gain (h FE) .70


    OCR Scan     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 UN 2911

    Untitled

    Abstract: No abstract text available
    Text: I I N AMER PHILIPS/DISCRETE MAINTENANCE TYPE DbE D bfc.53el31 00150 43 5 • J M06075B200Z T - ^ 3 - IM­ PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended fo r use in military and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications.


    OCR Scan     		PDF M06075B200Z

    x98c

    Abstract: No abstract text available
    Text: / r r SGS-THOMSON BUX98C HIGH POWER NPN SILICON TRANSISTOR . . • . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS: . HIGH FREQUENCY AND EFFICENCY CONVERTERS . LINEAR AND SWITCHING INDUSTRIAL


    OCR Scan     		PDF BUX98C BUX98C x98c

    BU808

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 5SE D ^53=131 QOlfibS? 0 • I _J B U 808 y r s i - i t r SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn switching transistor in a TO-3 envelope, intended for use in three-phase AC motor control systems.


    OCR Scan     		PDF T-33-T5 T-33-75 7Z81799 BU808

    transistor marking T2

    Abstract: TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor
    Text: • ^53^31 GGEMSSM HAPX N AMER PHILIPS/DISCRETE BCV64 BCV64B b7E D SILICON PLANAR TRANSISTOR Double P N-P transistor in a plastic SOT-143 envelope. Intended fo r Schmitt-trigger applications. N-P-N complement is the BCV63. QUICK REFERENCE DATA transistor Collector-emitter voltage open base


    OCR Scan     		PDF BCV64 BCV64B OT-143 BCV63. DDEU55b transistor marking T2 TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor

    D2C17

    Abstract: BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf
    Text: N AMER P H I L I P S / D I S C R E T E bTE T> • ^ 53^31 T 1 3 ■ APX 002*1732 A BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF BLY92C OT-120. 7Z68949 D2C17 BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF BLX95 7Z66943

    MMBR536

    Abstract: No abstract text available
    Text: 1EE § b3h72 SM MOTOROLA MOTOROLA SC QQ&75&S XSTRS/R □ I r-u-i r ' F SEM ICONDUCTOR TECHNICAL DATA MPS536 MMBR536 The RF Line PIMP Silico n High Frequency Transistor L O W N O IS E HIGH R F G A IN . this high current gain-bandwidth transistor makes an excellent RF amplifier and


    OCR Scan     		PDF b3h72 MPS536 MMBR536 OT-23 A/500 IS22I MMBR536

    marking S3 amplifier

    Abstract: MS6075B800Z
    Text: I I N AMER P H I L I P S / D I S C R E T E GtE D • ^^53^31 X MAINTENANCE TYPE | ' OOlSObS 4 MS6075BB00Z T -33-/ir PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended fo r use in m ilitary and professional applications. It operates only in


    OCR Scan     		PDF

    MS 1117 ADC

    Abstract: 1117 ADC TRANSISTOR 2SC 733 BUS51 1117 20 ADC 1117 S Transistor K1119 TRANSISTOR 2SC 635 100-C 25CC
    Text: MOTOROLA SC X S T R S /R iaE D I b3b?25M GoaMaaT T I F MOTOROLA SEM ICONDUCTOR BUS51 TECHNICAL DATA ADVANCED INFORMATION 50 A M PER ES SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR NPN SIUCON POWER TRANSISTOR 200 V O L T S V b r c E O 350 W A T TS The BUS51 transistor is designed for low voltage, high-speed, power


    OCR Scan     		PDF BUS51 MS 1117 ADC 1117 ADC TRANSISTOR 2SC 733 1117 20 ADC 1117 S Transistor K1119 TRANSISTOR 2SC 635 100-C 25CC

    Untitled

    Abstract: No abstract text available
    Text: ^53=131 0025510 'i El H A P X BSP121 L7E » N AMER PH IL IP S/ DI SC R ET E 7 V. N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed fo r use as a line current interrupter in telephone sets and fo r application in relay, high-speed and


    OCR Scan     		PDF BSP121 OT223 0Q25514 MCB331

    2n4427 MOTOROLA

    Abstract: 2N4427
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4427 The R F Line 1 W - 1 7 5 MHz NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH FREQUENCY TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator N PN SILIC O N applications in m ilita ry and industrial equipm ent. Suitable fo r use


    OCR Scan     		PDF 2N4427 2n4427 MOTOROLA 2N4427

    BUK455-500B

    Abstract: BUK455 BUK455-500A 25KW T0220AB RFTN-1
    Text: N A ME R 2se d PHILIPS/DISCRETE • b t 53T 3i oa a D s i D a ■ PowerMOS transistor B U K 455-500A B U K 455-500B r - ^ 7 - GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF T-37-IS BUK455 -500A -500B BUK455-500B BUK455-500A 25KW T0220AB RFTN-1

    BLX95

    Abstract: TRIMMER capacitor 10-40 pf G0b35 ptfe trimmer philips 100 pf International Power Sources PHILIPS 4312 amplifier IEC134 uhf trimmer capacitor Miniature Ceramic Plate Capacitors 2222 philips philips 2222 trimmer
    Text: b5E D 711DÖ2b 0Db353fl 523 « P H I N BLX95 PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transm itting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF 0Db353fl BLX95 VCC-28V BLX95 TRIMMER capacitor 10-40 pf G0b35 ptfe trimmer philips 100 pf International Power Sources PHILIPS 4312 amplifier IEC134 uhf trimmer capacitor Miniature Ceramic Plate Capacitors 2222 philips philips 2222 trimmer