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    TRANSISTOR QY Search Results

    TRANSISTOR QY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR QY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor equivalent table 557

    Abstract: 21045F
    Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F

    J148G

    Abstract: J148 MJD148 MJD148T4 MJD148T4G mjd1 NPN Silicon Power Transistor DPAK
    Text: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com POWER TRANSISTOR 4.0 AMPERES 45 VOLTS, 20 WATTS Features • High Gain − 50 Min @ IC = 2.0 A


    Original     		PDF MJD148 MJD148/D J148G J148 MJD148 MJD148T4 MJD148T4G mjd1 NPN Silicon Power Transistor DPAK

    J148G

    Abstract: j148 NPN Silicon Power Transistor DPAK MJD148 MJD148T4 MJD148T4G MS10 marking code QV transistor
    Text: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com POWER TRANSISTOR 4.0 AMPERES 45 VOLTS, 20 WATTS Features • High Gain − 50 Min @ IC = 2.0 A


    Original     		PDF MJD148 MJD148/D J148G j148 NPN Silicon Power Transistor DPAK MJD148 MJD148T4 MJD148T4G MS10 marking code QV transistor

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    b1009 transistor

    Abstract: B1009 ba656 ba9700-series BA6566
    Text: Regulator ICs Switching regulator for DC-DC converters BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF and BA9700AFV are switching regulators that use a pulse width modulation PWM system. They use a transistor switch to stabilize the output voltage. By the use of the transistor, power loss is decreased, fluctnation efficiency is improved, and the circuit is made more


    Original     		PDF BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF BA9700AFV 470kHz) BU8874lBU8874F BU8874 BU8874F 03iOl b1009 transistor B1009 ba656 ba9700-series BA6566

    diode AY 101

    Abstract: IPD50R520CP
    Text: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V฀*EL;HI฀<?=JG;฀E<฀C;G?I฀0IH฀M฀/Y V฀3BIG7฀BEL฀=7I;฀9>7G=; V"1฀9N\_Si //* P R>M#a`$&_Si * /,*  +- `= QY&ejb V฀#MIG;C;฀:K :I฀G7I;: V฀&?=>฀F;7A฀9JGG;DI฀97F78?B?IN


    Original     		PDF IPD50R520CP 97F78 799EG: 87BB7HI diode AY 101 IPD50R520CP

    diode EZD

    Abstract: diode AY 101
    Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V฀*EL;HI฀<?=JG;฀E<฀C;G?I฀0-,฀M฀/Y V฀3BIG7฀BEL฀=7I;฀9>7G=; V"1฀9N\_Si //* P R>M#a`$&_Si * -33  +1 `= QY&ejb V฀#MIG;C;฀:K :I฀G7I;: V฀&?=>฀F;7A฀9JGG;DI฀97F78?B?IN


    Original     		PDF IPD50R399CP 97F78 799EG: /L-33J diode EZD diode AY 101

    MARKING W2 SOT23 TRANSISTOR

    Abstract: sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR
    Text: 2SC2714 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS AM/FM ,RF,MIX,IF AMPLIFIER APPLICATIONS * High Current Gain Bandwidth Product fT=550MHz Package:SOT-23


    Original     		PDF 2SC2714 550MHz OT-23 CHARACTERIST12 600TYP 6614TYP 99221TYP 1102TYP MARKING W2 SOT23 TRANSISTOR sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR

    1w5301

    Abstract: 1n414b AN-944 1W530 high voltage gate drive transformer IC not gate data sheet DS0026 IRF130 AN944 transistor bipolar superficial
    Text: Application Note AN-944 Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs Table of Contents Page 1. Input behavior of a MOS-gated transistor . 1 2. Test Circuit. 1


    Original     		PDF AN-944 1w5301 1n414b AN-944 1W530 high voltage gate drive transformer IC not gate data sheet DS0026 IRF130 AN944 transistor bipolar superficial

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC2714 Pb Small reverse transfer capacitance: Lead-free Cre=0.7pF Typ. z Low noise Figure:NF=2.5dB(Typ.) f=100MHz. APPLICATIONS z High frequency amplifier applications.


    Original     		PDF 2SC2714 100MHz. OT-23 BL/SSSTC098

    NPN Silicon Epitaxial Planar Transistor

    Abstract: transistor marking PB 2SC4215W SOT323 Marking bl Audio Frequency General Purpose Amplifier sot323 transistor marking Marking qy marking BR SOT sot323 marking K MARKING K SOT323
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z 2SC4215W Pb Lead-free Power dissipation. PC=100mW APPLICATIONS z Audio frequency general purpose amplifier. SOT-323 ORDERING INFORMATION Type No. Marking Package Code


    Original     		PDF 2SC4215W 100mW) OT-323 BL/SSSTF041 NPN Silicon Epitaxial Planar Transistor transistor marking PB 2SC4215W SOT323 Marking bl Audio Frequency General Purpose Amplifier sot323 transistor marking Marking qy marking BR SOT sot323 marking K MARKING K SOT323

    HP 2531

    Abstract: HP 2531 optocoupler 2n3904 smd pin configuration HP RF TRANSISTOR GUIDE transistor rf type M 2530 gold detectors circuit HCPL-5501 TRANSISTOR SMD MARKING CODE pa optocoupler HP HCPL-653X
    Text: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-257K HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device


    Original     		PDF HCPL-553X HCPL-653X HCPL-257K HCPL-655X HCPL-550X MIL-PRF-38534 QML-38534, 6N135, 6N136, HCPL-2530/ HP 2531 HP 2531 optocoupler 2n3904 smd pin configuration HP RF TRANSISTOR GUIDE transistor rf type M 2530 gold detectors circuit HCPL-5501 TRANSISTOR SMD MARKING CODE pa optocoupler HP HCPL-653X

    Untitled

    Abstract: No abstract text available
    Text: FF 300 R 06 KF 2 Therm ische Eigenschaften Therm al properties 0,05 DC, pro Baustein / per module 0,10 DC, pro Zweig / per arm pro Baustein / per module 0,03 RthCK 0,06 pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties


    OCR Scan     		PDF 3403HT7

    tea 1402

    Abstract: TEA-1035 2SK1850 MEI-1202 2sk18 TEA-1034 TEA1035
    Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1850 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1850 is N-channel MOS Field Effect Transistor de­ PACKAGE DIMENSIONS in millim eters signed for solenoid, motor and lamp driver.


    OCR Scan     		PDF 2SK1850 2SK1850 IEI-1209) tea 1402 TEA-1035 MEI-1202 2sk18 TEA-1034 TEA1035

    Untitled

    Abstract: No abstract text available
    Text: FF 25 R 12 KF Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,25 0,5 DC, pro Zweig / per arm 0,06 RthCK pro Baustein /p e r module 0,12 Transistor Transistor Elektrische Eigenschaften Electrical properties H öchstzulässige W erte


    OCR Scan     		PDF 34D32CI7

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    motorola 304

    Abstract: MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075
    Text: Order this document by MRFG9801/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9801 MRFG9801R Advance Information The RF Line N-Channel Dual-Gate G a A s Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion mode dual-gate MES FET designed for high frequency amplifier


    OCR Scan     		PDF MRFG9801/D MRFG9801/9801R MRFG9801/D motorola 304 MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075

    mrf226

    Abstract: Allen-Bradley cb MRF-226 15MH K200 8-32NC-2 TRANSISTOR c 5568 TRANSISTOR motorola 838
    Text: Order this document by MRF226/D MRF226 The RF Line 13 W — 225 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt large-signal power am plifier applications in com m unication equipm ent operating at 225 MHz. Ideally suited


    OCR Scan     		PDF MRF226/D MRF226 MRF226/D mrf226 Allen-Bradley cb MRF-226 15MH K200 8-32NC-2 TRANSISTOR c 5568 TRANSISTOR motorola 838

    CMPT930

    Abstract: No abstract text available
    Text: Central" Sem iconductor Corp. CMPT930 NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL S E M IC O N D U C T O R C M P T 9 3 0 type is an N P N silicon transistor m anufactured by the epitaxial planar process, epoxy m olded in a surface mount package, designed for sm all signal general purpose


    OCR Scan     		PDF CMPT930 CMPT930 OT-23 10jxA 500mA, 30MHz DD01606

    1S1888X4

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1092 TOSHIBA TRANSISTOR SILICON NPN DOUBLE DIFFUSED TYPE PCT PROCESS 2 S D 1 092 Unit in mm PO W ER REGULATOR FOR LINE OPERATED TV. 15.9 m AX. Excellent Wide Safe Operating Area. (80W*$ at Tc = 25°C) Included Avalanche Diode : V z = 5 5 ^ J qy


    OCR Scan     		PDF 2SD1092 1S1888X4

    2SD1092

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1092 TOSHIBA TRANSISTOR 2 S D 1 092 SILICON NPN DOUBLE DIFFUSED TYPE PCT PROCESS Unit in mm PO W ER REGULATOR FOR LINE OPERATED TV. , 2.0 Excellent Wide Safe Operating Area. (80W-S at Te = 25°C) Included Avalanche Diode : V z = 5 5 ^ | qy High DC Current Gain : hFE = 500 (Min.) (Tc = 25°C)


    OCR Scan     		PDF 2SD1092 2SD1092

    design dielectric resonator oscillator

    Abstract: wide band rf reference designs DIELECTRIC COAXIAL RESONATOR varactor diode q factor measurement J048A
    Text: A COMPARISON OF MICROSTRIP & COAXIAL RESONATOR VOLTAGE CONTROLLED OSCILLATOR DESIGN APPROACHES APPLICATIONS single transistor driven into oscillation with positive feedback and frequency changed with a varactor tuned resonant circuit. The resonant element for the


    OCR Scan     		PDF 1920s. 10WBAN0 J048A KD-P-B81N8 design dielectric resonator oscillator wide band rf reference designs DIELECTRIC COAXIAL RESONATOR varactor diode q factor measurement