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    TRANSISTOR Q 667 Search Results

    TRANSISTOR Q 667 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Q 667 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Diode marking MFW

    Abstract: MFW diode 95rr DIODE S3K ZW 13 diode YQB marking Marking jx Diode MFW B651 WQ marking
    Text: SPB80N10L!M SIPMOSTMPower-Transistor Product Summary Feature RQQ w RetI••J RU Ž Ie YQ b S 2H mfssj q VDS J smfshj rj syrtij Qtln hQj {j q qNupSWTNT 6<: ´H tuj wfyn sl yj ruj wfyzwj F{fqfshmj wfyj i ivP… t wfyj i@M fqtlj s2kwj j fhhtwin sl yt NJ H ;679>27276


    Original
    SPB80N10L Diode marking MFW MFW diode 95rr DIODE S3K ZW 13 diode YQB marking Marking jx Diode MFW B651 WQ marking PDF

    transistor k702

    Abstract: transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230
    Text: ORDER NO. CPD0603076C0 Notebook Computer CF-18 This is the Service Manual for the following areas. Z …for PCPE /CPE Model No. CF-18JHUZBZZ 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.


    Original
    CPD0603076C0 CF-18 CF-18JHUZBZZ K1MN04B00073 K1KA07BA0014 C0EBH0000457 C1DB00001351 XP0431200L UNR9113J0L transistor k702 transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSR17A _ SILICON PLANAR EPITAXIAL TRANSISTORS N-PTM silicon transistor in a m icro m in ia tu re plastic package intended fo r sw itching and linear applica tions in th ic k and th in -film circuits. Q U IC K R EF E R E N C E D A T A Collector-base voltage open e m itte r


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    BSR17A PDF

    27e transistor

    Abstract: iSS TRANSISTOR bd277
    Text: P ow er Transistors File Number 667 HA RR IS S E M I C O N D S E C T O R BD277 27E D • 4 3 0 2 2 7 1 D02a].33 3 « H A S T - 3 3 - 2 -1 7-A, 70-W, Epitaxial-Base, Silicon P -N-P VERSAWATT Transistors For A pp lication s in Series and Shunt Regulators Features:


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    BD277 T0-220AB O-22QAB BD277 43G2271 QD2Q13S 27e transistor iSS TRANSISTOR PDF

    BD277

    Abstract: 1754-3 92CS-I8007
    Text: G E SOLI D 01 STATE 3875081 G E SOLID STATE _ 3075061 01E 0017S4H D •T^ 17542 ~ 7 2/ Pro Electron Pow er Transistors ' File Number 667 BD277 7-A, 70-W, Epitaxial-Base, Silicon


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    GG1754H BD277 BD277 O-220AB 92CS-iaooi 92CS-i80i2 92CS-I8007 1754-3 92CS-I8007 PDF

    6676 transistor

    Abstract: 6676 PTC6677 TO-247 NPN SILICON POWER TRANSISTORS ptc 870 PTC6676
    Text: 02E 00 43 2 .Y.! 61 159 50 M IC R O S E M I C O R P / P O W E R ¿.-i 02 DE |T , 115^ 50 D 00DD435 ö T"- / 3 - / J pJQ 6676P PTC 6677P PTC 6678P |~ Power Technology Components POWERMODE III S E R IE S NPN SILICON POWER > TRANSISTOR 15 AMPERES O 400 VOLTS


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    00DD435 6676P 6677P 6678P O-247 6676 transistor 6676 PTC6677 TO-247 NPN SILICON POWER TRANSISTORS ptc 870 PTC6676 PDF

    NPN power transistor 15A amperes 400 volt

    Abstract: PTC6674
    Text: V*. niCRO SEKi CORP/POIilER gg DE J h l l S T S D ODODMaü 1 | PTC 6674P PTC 6675P - f-'-i- V’ ‘.ïr=W - -S'; - V - v ; - - ••• • •:v -r,> -.v-.-iv.v •. v : / -V -V f. : • r , .- T E C H N O LO G Y Power Technology POWERMODE III SERIES


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    6674P 6675P 400Volts O-247 NPN power transistor 15A amperes 400 volt PTC6674 PDF

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MC33468/D MOTOROLA M C 33468 V ariable Frequency M icropow er S tep-up DC-DC Converter The MC33468 is a micropower ste p -u p switching voltage regulator, specifically designed for handheld and pager applications, to provide a regulated output voltage using a minimum of external parts. This device


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    MC33468/D MC33468 MC33468 T-23-5 PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc PDF

    L2 SOT-23-5

    Abstract: sot-23-5 marking cy motorola step down voltage regulator
    Text: Order this document by MC33468/D M M O TO R O LA V ariable Freq u en cy M icropow er Step -u p D C -D C C onverter The MC33468 is a micropower step-up switching voltage regulator, specifically designed for handheld and pager applications, to provide a regulated output voltage using a minimum of external parts. This device


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    MC33468/D MC33468 L2 SOT-23-5 sot-23-5 marking cy motorola step down voltage regulator PDF

    10N100E

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TW 10N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TW 10N 100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 10 AMPERES


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    10N100E/D 340K-01 10N100E PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder th is docum ent by MTY10N1OOE/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T Y IO N IO O E TMOS E-FET ™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FET


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    MTY10N1OOE/D MTY10N100E/D PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2-Phase Stepper-Motor Driver TLE 4728 Prelim inary Data Bipolar-IC Features • • • • • • • • • • 2 x 1 amp. full bridge outputs Integrated driver, control logic and current control chopper Fast free-wheeling diodes Max. supply voltage 45 V


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    P-DSO-24-1 Q6700-A9077 PDF

    SMPS 666

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Powerll/IOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies SMPS ,


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    BUK474-60H OT186A SMPS 666 PDF

    kbr 4.0M

    Abstract: TM 511720 TI 51173 transistor LC6523
    Text: Ordering number: EN%5117 CMOS LSI No. * 5117 LC6529N, 6529F, 6529L 4-Bit Microcomputer for Small-Scale Control Applications Preliminary Overview The LC6529N/F/L provides the basic architecture and instruction set of the Sanyo LC6500 Series of 4-bit single­


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    LC6529N, 6529F, 6529L LC6529N/F/L LC6500 LC6529F LC6529H. kbr 4.0M TM 511720 TI 51173 transistor LC6523 PDF

    BFQ42

    Abstract: SI 3105 A choke 663 transistor t07 BLW29 ferroxcube wideband hf choke
    Text: 711002t. Q0b31ôl G7Q BIPHIN bSE D BLW29 J PHILIPS V. INTERNATIONAL V.H.F. POW ER TRAN SISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power


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    711002t. BLW29 BFQ42 7Z77686 7Z77587 SI 3105 A choke 663 transistor t07 BLW29 ferroxcube wideband hf choke PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor PDF

    smd npn 2n2222

    Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
    Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.


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    2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200 PDF

    4728

    Abstract: No abstract text available
    Text: SIEMENS 2-Phase Stepper-Motor Driver TLE 4728 Preliminary Data Bipolar-IC Features • 2 x 1 amp. full bridge outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Overvoltage cut-out


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    P-DSO-24-1 Q6700-A9077 4728 PDF

    BLX92A

    Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
    Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


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    BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944 PDF

    Untitled

    Abstract: No abstract text available
    Text: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


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    BLX93A tbS3T31 PDF

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


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    PDF

    M51143AL

    Abstract: No abstract text available
    Text: MITSUBISHI SOUND PROCESSORS M51143AL TAPE PROGRAM SELECTOR CIRCUIT DESCRIPTION The M51143AL is an integrated circuit designed for use as a tape program selector. PIN CONFIGURATION TOP VIEW 8 | Vcc It consists of a limiter amplifier, a signal detector circuit,


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    M51143AL M51143AL PDF

    transistor tt 2222

    Abstract: 9 BJE 53 mj 1504 transistor BFQ42 mj 1504 BLW29 tt 2222 transistor l5
    Text: • bbSBTBl OOSTSflM ÔG7 H A P X N AtlER PHILIPS/DISCRETE BLW29 b*ÎE T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power


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    BLW29 BFQ42 bb531Bl 7Z77586 7Z77587 transistor tt 2222 9 BJE 53 mj 1504 transistor mj 1504 BLW29 tt 2222 transistor l5 PDF