Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTPS717MC ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A
|
Original
|
PDF
|
ZXTPS717MC
ZX3CD1S1M832
|
4420 Transistor
Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
|
Original
|
PDF
|
ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
transistor b 622
pnp transistor d 640
Schottky Diode 40V 5A
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
0118 transistor
High voltage fast switching power transistor pnp
DSA003748
|
4420 Transistor
Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
|
Original
|
PDF
|
ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
Schottky Diode 40V 5A
Schottky diode Die IR
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
transistor MV sot23
|
transistor pnp VCEO 12V Ic 1A
Abstract: ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak
Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very
|
Original
|
PDF
|
ZXTD6717E6
OT23-6
OT23-6
transistor pnp VCEO 12V Ic 1A
ZXTD6717E6
ZXTD6717E6TA
ZXTD6717E6TC
transistor pnp 12V 1A Continuous Current Peak
|
P12D
Abstract: P12D marking ZXT13P12DE6 ZXT13P12DE6TA ZXT13P12DE6TC marking p12d DSA0037465
Text: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
|
Original
|
PDF
|
ZXT13P12DE6
OT23-6
OT23-6
P12D
P12D marking
ZXT13P12DE6
ZXT13P12DE6TA
ZXT13P12DE6TC
marking p12d
DSA0037465
|
ZXT10P12DE6
Abstract: ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437
Text: ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
|
Original
|
PDF
|
ZXT10P12DE6
OT23-6
OT23-6
ZXT10P12DE6
ZXT10P12DE6TA
ZXT10P12DE6TC
Marking 717
DSA0037437
|
MLP832
Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC 0001M10
Text: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
|
Original
|
PDF
|
ZX3CD1S1M832
500mV
MLP832
ZX3CD1S1M832
ZX3CD1S1M832TA
ZX3CD1S1M832TC
0001M10
|
T14P12DX
Abstract: MO-187 ZXT14P12DX ZXT14P12DXTA ZXT14P12DXTC DSA003747
Text: ZXT14P12DX SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 16m ; IC= -6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
|
Original
|
PDF
|
ZXT14P12DX
ZXT14P12DXTA
T14P12DX
MO-187
ZXT14P12DX
ZXT14P12DXTA
ZXT14P12DXTC
DSA003747
|
Untitled
Abstract: No abstract text available
Text: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
|
Original
|
PDF
|
ZXT13P12DE6
OT23-6
OT23-6
|
MLP832
Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC
Text: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
|
Original
|
PDF
|
ZX3CD1S1M832
500mV
MLP832
ZX3CD1S1M832
ZX3CD1S1M832TA
ZX3CD1S1M832TC
|
MO-187
Abstract: ZXT12P12DX ZXT12P12DXTA ZXT12P12DXTC t12p12dx DSA0037452
Text: ZXT12P12DX SuperSOT4 DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 47m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
|
Original
|
PDF
|
ZXT12P12DX
MO-187
ZXT12P12DX
ZXT12P12DXTA
ZXT12P12DXTC
t12p12dx
DSA0037452
|
Untitled
Abstract: No abstract text available
Text: ZXT1M322 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION Packaged in the innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation transistor offers extremely low on state
|
Original
|
PDF
|
ZXT1M322
|
MLP322
Abstract: ZXT1M322 ZXT1M322TA ZXT1M322TC
Text: ZXT1M322 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION Packaged in the innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation transistor offers extremely low on state
|
Original
|
PDF
|
ZXT1M322
MLP322
ZXT1M322
ZXT1M322TA
ZXT1M322TC
|
ZXTC6717MC
Abstract: marking DA1 DFN3020B-8 ZXTC6717MCTA
Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 15V • RSAT = 45mΩ • IC = 4.5A PNP Transistor
|
Original
|
PDF
|
ZXTC6717MC
100mV
DFN3020B-8
J-STD-020
MIL-STD-202,
DS31926
ZXTC6717MC
marking DA1
DFN3020B-8
ZXTC6717MCTA
|
|
|
Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTD717MC ZXTD1M832 MPPS Miniature Package Power Solutions DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP Micro Leaded Package
|
Original
|
PDF
|
ZXTD717MC
ZXTD1M832
|
ZXT1M322T
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTP717MA ZXT1M322 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION Packaged in the innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation transistor offers extremely low on state
|
Original
|
PDF
|
ZXTP717MA
ZXT1M322
ZXT1M322T
|
MLP832
Abstract: ZXTD1M832 ZXTD1M832TA ZXTD1M832TC
Text: ZXTD1M832 MPPS Miniature Package Power Solutions DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual transistors offer
|
Original
|
PDF
|
ZXTD1M832
MLP832
ZXTD1M832
ZXTD1M832TA
ZXTD1M832TC
|
Untitled
Abstract: No abstract text available
Text: 2SB1697 Datasheet PNP -2A -12V Middle Power Transistor lOutline Parameter Value VCEO IC -12V -2A MPT3 Base Collector Emitter 2SB1697 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2661 3) Low VCE(sat) VCE(sat)= -0.18V(Max.)
|
Original
|
PDF
|
2SB1697
SC-62)
OT-89>
2SD2661
-50mA)
R1102A
|
Untitled
Abstract: No abstract text available
Text: 2SD2661 Datasheet NPN 2A 12V Middle Power Transistor lOutline Parameter Value VCEO IC 12V 2A MPT3 Base Collector Emitter 2SD2661 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1697 3) Low VCE(sat) VCE(sat)=0.18V(Max.)
|
Original
|
PDF
|
2SD2661
SC-62)
OT-89>
2SB1697
A/50mA)
R1102A
|
Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTD717MC ZXTD1M832 MPPS Miniature Package Power Solutions DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual transistors offer
|
Original
|
PDF
|
ZXTD717MC
ZXTD1M832
|
ZXTD717MC
Abstract: DFN3020B-8 ZXTD717MCTA
Text: A Product Line of Diodes Incorporated ZXTD717MC DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • • • • VCEO = -12V RSAT = 60 mΩ IC = -4A Continuous Collector Current Low Equivalent On Resistance
|
Original
|
PDF
|
ZXTD717MC
-140mV
DFN3020B-8
J-STD-020
MIL-STD-202,
DS31934
ZXTD717MC
DFN3020B-8
ZXTD717MCTA
|
Flyback Transformers SANYO TV
Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)
|
Original
|
PDF
|
CDMA2000]
Flyback Transformers SANYO TV
RD1004
2SC5707
uhf 150w mosfet 12v
bfl4006
2SC5706 equivalent
Si sw diode 20V 0.2A SOT323
SSFP package
BBS3002
tv tube charger circuit diagrams
|
CHINA TV FBT
Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: [email protected] Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV
|
Original
|
PDF
|
O-92M
KRC102M
KRC112M
O-92L
KTN2369,
KTC3194
KTC3197,
KTC3198
KTC945B
KIA431
CHINA TV FBT
transistor 2N3906 smd 2A SOT23
TS4B05G
transistor 2N3904 smd 2A SOT23
fbt tv
KIA7812API
KIA431A transistor
transistor KIA431A
CHINA TV uoc
2N60 MOSFET SMPS
|
2SA1488
Abstract: 2SA1488A 2SC3851A transistor pnp 12v 1a
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1488A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·DC Current Gain: hFE= 40(Min)@ IC= -1A ·Complement to Type 2SC3851A APPLICATIONS ·Designed for audio and general purpose applications.
|
Original
|
PDF
|
2SA1488A
2SC3851A
-25mA;
2SA1488
2SA1488A
2SC3851A
transistor pnp 12v 1a
|
