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    TRANSISTOR P58 Search Results

    TRANSISTOR P58 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P58 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XC6SLX16-CSG324

    Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
    Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller


    Original     		PDF DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL

    FCX458

    Abstract: FCX558 FZT558 DSA003685
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		PDF FCX558 FCX458 -50mA, -100mA, -10mA, 20MHz -100V FCX458 FCX558 FZT558 DSA003685

    FCX558TA

    Abstract: FCX458
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		PDF FCX458 FCX558 -10mA* -320V; -20mA, -50mA, -100mA, FCX558TA

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		PDF FCX558 FCX458 -50mA, -100mA, -10mA, 20MHz -100V

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL VALUE UNIT Collector-Base Voltage


    Original     		PDF FCX558 FCX458 -100m -100V FZT558

    SEM 2004

    Abstract: P5806NVG
    Text: P5806NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 60 58mΩ 4.5A P-Channel -60 90mΩ -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)


    Original     		PDF P5806NVG Oct-01-2004 SEM 2004 P5806NVG

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FCX555 150V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • BVCEO > -150V BVCEV > -180V IC = -700mA high Continuous Collector Current Low saturation voltage VCE sat < -300mV @ -100mA


    Original     		PDF FCX555 -150V -180V -700mA -300mV -100mA FCX495 AEC-Q101 J-STD-020

    marking P58

    Abstract: FCX558TA transistor p58 sot89 package
    Text: A Product Line of Diodes Incorporated FCX558 400V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > -400V IC = -200mA high Continuous Current Low saturation voltage VCE sat < -200mV @ -20mA


    Original     		PDF FCX558 -400V -200mA -200mV -20mA FCX458 AEC-Q101 J-STD-020 MIL-STD-202, FCX558 marking P58 FCX558TA transistor p58 sot89 package

    transistor c3909

    Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor

    transistor p98

    Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57

    V23990-P588-A

    Abstract: V23990-P588 tyco igbt 1200V
    Text: V23990-P588-A target datasheet nd flow PIM 1 2 gen. , 1200V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode


    Original     		PDF V23990-P588-A 52Ohm thikness50um Dicke50um D81359 V23990-P588-A V23990-P588 tyco igbt 1200V

    V23990-P586-A

    Abstract: No abstract text available
    Text: V23990-P586-A target datasheet flow PIM 1 2nd gen. , 600V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode


    Original     		PDF V23990-P586-A 40-limited 68Ohm D81359 thikness50um Dicke50um V23990-P586-A

    V23990-P585-A

    Abstract: V23990-P585
    Text: V23990-P585-A target datasheet nd flow PIM 1 2 gen. , 600V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode


    Original     		PDF V23990-P585-A 40-limited 68Ohm D81359 thikness50um Dicke50um V23990-P585-A V23990-P585

    V23990-P584

    Abstract: V23990-P584-A
    Text: V23990-P584-A target datasheet nd flow PIM 1 2 gen. , 600V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode


    Original     		PDF V23990-P584-A 68Ohm D81359 thikness50um Dicke50um V23990-P584 V23990-P584-A

    V23990-P589-A

    Abstract: tyco igbt 1200V 36Ohm ND transistor igbt tyco
    Text: V23990-P589-A target datasheet nd flow PIM 1 2 gen. , 1200V version 05/03 Maximum Ratings / Höchstzulässige Werte Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode


    Original     		PDF V23990-P589-A 40-limited 52Ohm thikness50um Dicke50um D81359 V23990-P589-A tyco igbt 1200V 36Ohm ND transistor igbt tyco

    V23990-P589-A41-PM

    Abstract: V23990-P589-A vinco flowpim V23990-P589-A41 061W vincotech flowPIM
    Text: V23990-P589-A41-PM target datasheet flowPIM 1 3rd gen 1200V/25A Features flowPIM1 housing ● 3~ rectifier, BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour Target Applications


    Original     		PDF V23990-P589-A41-PM 200V/25A V23990-P589-A41-PM V23990-P589-A vinco flowpim V23990-P589-A41 061W vincotech flowPIM

    Untitled

    Abstract: No abstract text available
    Text: V23990-P589-A31-PM preliminary datasheet flowPIM 1 3rd gen 1200V / 25A Features flowPIM1 housing ● 3~ rectifier, BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT2 phantom speed / EmCon4 technology ● Lower losses than IGBT3 or 4 for fsw > 8kHz


    Original     		PDF V23990-P589-A31-PM 30kHz 16kHz)

    Industrial Drives

    Abstract: Embedded Drives P586A
    Text: V23990-P586-*2*-PM flow PIM 1 600V/50A Features flow 1 housing ● 3~rectifier, optional BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT! / EmCon4 technology for low saturation losses Solder pins and improved EMC behaviour Target Applications


    Original     		PDF V23990-P586- 00V/50A V23990-P586-A20-PM V23990-P586-A20Y-PM V23990-P586-A208-PM V23990-P586-C20-PM V23990-P586-C20Y-PM Industrial Drives Embedded Drives P586A

    P589A41

    Abstract: P589A4 P589A
    Text: V23990-P580-*4*-PM flow PIM 1 1200V/35A Features flow 1 housing ● 3~rectifier, optional BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT! / EmCon4 technology for low saturation losses and improved EMC behaviour 12mm housing Solder pins


    Original     		PDF V23990-P580- 200V/35A V23990-P580-A41-PM V23990-P580-A41Y-PM V23990-P580-A418-PM V23990-P580-C41-PM V23990-P580-C41Y-PM P589A41 P589A4 P589A

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -MARCH 1996 FEATURES * 400 V o lt V,CEO * P, 1 W a tt CO M PLEM ENTARY TYPE - FCX458 PARTM ARKING DETAIL - P58 ABSOLUTE MAXIMUM RATINGS, SYMBOL PARAMETER Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF FCX458 -100nA -320V; -50mA, -10mA, VrE---20V 20MHz

    tlp582

    Abstract: No abstract text available
    Text: TO SHIBA TLP582 TOSHIBA PHOTOCOUPLER GaA€As IRED & PHOTO 1C T L P58 2 MOS FET GATE DRIVER U n it in mm TRANSISTOR INVERTER The T O S H IB A TLP582 consists of a G aA €A s lig h t em itting diode and 18,9 ±0.3 integrated high gain, high speed photodetector.


    OCR Scan     		PDF TLP582 TLP582 Transi20

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SIUCON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSU E 3 -M ARCH 1996_ FEA TU R ES * 400 V o lt VCE0 * Ptot= 1 W att C O M PLEM EN TA R Y T Y P E - FC X458 PA RTM A RKIN G D ET A IL - P58 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL


    OCR Scan     		PDF FCX558 -50mA, VCE--10V* idth-300 FZT558 00DT2S7 -20mA, -100mA, -10mA,

    P5* RF SOT89

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSU E 3 -M A R C H 1996 _ FEATURES * 400 V olt V,CEO P,or 1 W att C O M P LEM EN T A R Y TYPE - FCX458 P A R T M A R K IN G D E T A IL - P58 ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage


    OCR Scan     		PDF FCX558 FCX458 -320V; -20mA, -50mA, FZT558 P5* RF SOT89

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


    OCR Scan     		PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922