Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR P0903BDG Search Results

    TRANSISTOR P0903BDG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P0903BDG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P0903BDG

    Abstract: p0903bd Niko Semiconductor p0903bdg transistor p0903bdg niko-sem p0903bdg P0903BDG transistor SEP-24-2004 P0903b P0903 P09*3bdg
    Text: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P0903BDG TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P0903BDG O-252 Temperature2004 SEP-24-2004 P0903BDG p0903bd Niko Semiconductor p0903bdg transistor p0903bdg niko-sem p0903bdg P0903BDG transistor SEP-24-2004 P0903b P0903 P09*3bdg

    P0903BDG

    Abstract: p0903bd p0903 ELM32424LA-S
    Text: Single N-channel MOSFET ELM32424LA-S •General description ■Features ELM32424LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=50A Rds(on) < 9.5mΩ (Vgs=10V) Rds(on) < 16mΩ (Vgs=4.5V)


    Original     		PDF ELM32424LA-S ELM32424LA-S P0903BDG O-252 SEP-24-2004 P0903BDG p0903bd p0903

    P0903BDG

    Abstract: ELM32424LA-S
    Text: Single N-channel MOSFET ELM32424LA-S •General description ■Features ELM32424LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=50A Rds(on) < 9.5mΩ (Vgs=10V) Rds(on) < 16mΩ (Vgs=4.5V)


    Original     		PDF ELM32424LA-S ELM32424LA-S P0903BDG O-252 SEP-24-2004 P0903BDG

    P0903BDG

    Abstract: ELM32424LA-S p0903bd p0903b
    Text: シングル N チャンネル MOSFET ELM32424LA-S •概要 ■特長 ELM32424LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=50A ・ Rds on < 9.5mΩ (Vgs=10V) ・ Rds(on) < 16mΩ (Vgs=4.5V)


    Original     		PDF ELM32424LA-S P0903BDG O-252 SEP-24-2004 P0903BDG ELM32424LA-S p0903bd p0903b

    ELM32424LA

    Abstract: ELM32424LA-S
    Text: 单 N 沟道 MOSFET ELM32424LA-S •概要 ■特点 ELM32424LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=50A ·Rds on < 9.5mΩ (Vgs=10V) ·Rds(on) < 16mΩ (Vgs=4.5V) ■绝对最大额定值 项目


    Original     		PDF ELM32424LA-S P0903BDG O-252 SEP-24-2004 ELM32424LA ELM32424LA-S