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    TRANSISTOR P 0225 Search Results

    TRANSISTOR P 0225 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P 0225 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Voltage Regulators AN8013SH Single-channel step-up or step-down DC-DC converter control IC Unit: mm • Overview +0.1 0.15–0.05 SSOP010-P-0225 Note The package of this product will be changed to lead-free type SSOP010-P-0225A). See the new package dimensions section later of this


    Original     		PDF AN8013SH AN8013SH 10-pin

    Untitled

    Abstract: No abstract text available
    Text: 19-0225; Rev 3; 9/97 IT K ATION EVALU BLE AVAILA 5 V /3 .3 V /3 V or Adjust a ble , H igh-Effic ie nc y, Low I Q , St e p-Dow n DC-DC Cont rolle rs _Applic a t ions 5V-to-3.3V Green PC Applications High-Efficiency Step-Down Regulation


    Original     		PDF MAX649) MAX651) MAX652) 300kHz

    PACKAGE PANASONIC

    Abstract: AN90B01S DIP018-P transistor B42 AN90B22 AN90B60
    Text: General Purpose Linear ICs I Transistor Arrays >AN90B00/S Series V çe = 2 4 V , Iç =25m A (Note) Pin numbers in □ show those o f SO Package. Equivalent Circuits AN90B01S : 5 Circuits (SOP016-P-0225) è— -G aa Ä Ä AN90B10 : 8 Circuits (DIP018-P-0300E)


    OCR Scan     		PDF AN90B00/S AN90B01S OP016-P-0225) AN90B10 DIP018-P-0300E) AN90B20 AN90B20S AN90B21 PACKAGE PANASONIC AN90B01S DIP018-P transistor B42 AN90B22 AN90B60

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TPC8301 TOSHIBA FIELD EFFECT TRANSISTOR T P f SILICON P CHANNEL MOS TYPE L2- tt-MOSVI s i m LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC ORTABLE MACHINES AND TOOLS Low Drain-Source ON Resistance : Rd S (ON)= 95mO (Typ.) High Forward Transfer Admittance


    OCR Scan     		PDF TPC8301 --30V)

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR t p t f SILICON P CHANNEL MOS TYPE tt-MOSVI t 1 n ? LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance : Rj)g (ON) —34m il (Typ.) •


    OCR Scan     		PDF TPC8102 --10//A --30V) ----24V,

    YTA640

    Abstract: No abstract text available
    Text: TOSHIBA YTA640 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV YTA640 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF YTA640 YTA640

    MOTOROLA N-Channel MOSFET 3-334

    Abstract: 3-336 motorola MTH20N15 YI45M RF1MB Case 197A-02 VDE 0660 AN569 MTM20N15 S150
    Text: MOTOROLA SC IME D I b3b7254 QGôTiQG 4 I XSTRS/R F 7 ~~3 ? - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTH2 0 N15 MTM2 0 N15 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS T M O S P O W ER F E T s 20 A M P E R E S


    OCR Scan     		PDF 3b7254 MTH20N15 MTM20N15 to-218ac MOTOROLA N-Channel MOSFET 3-334 3-336 motorola YI45M RF1MB Case 197A-02 VDE 0660 AN569 MTM20N15 S150

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M05 TYPE L2- tt-MOSVI TPf«ift7 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : R d S (ON)= lOOmO (Typ.)


    OCR Scan     		PDF TPC8302 ----16V,

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA SSM3J02F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J02F POWER MANAGEMENT SWITCH U nit in mm HIGH SPEED SWITCHING APPLICATIONS + 0.5 2.5-0.3 + 0.25 1.5-0.15 Sm all Package Low on Resistance : Ron = 0.5 Cl Max. (@VQg = —4 V)


    OCR Scan     		PDF SSM3J02F

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR t p t SILICON N CHANNEL MOS TYPE tt-MOSVI f t ? n ? LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive Low Drain-Source ON Resistance : R ü g (ON) —41m n (Typ.)


    OCR Scan     		PDF TPC8202 20ki2) --16V,

    Untitled

    Abstract: No abstract text available
    Text: TPC8001 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI T P ffin m LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance : Rj)g (ON)= 15m£2 (Typ.) • High Forward Transfer Adm ittance: |Yfs| = IIS (Typ.)


    OCR Scan     		PDF TPC8001 --24V,

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND 8514019 SPRAGUE. GR OU P T3 D • S E M IC O N D S / IC S flS13flSD D D D 3 S 7 T b ■ 0 3 5 7 9 7 ^ ^ - ¿ S 'V 93D JUNCTION FIELD-EFFECT TRANSISTOR CHIPS_ _ N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C


    OCR Scan     		PDF flS13flSD THJ3369 THJ3370 THJ3458 THJ3459 THJ3460 THJ3819 THJ3B21 THJ3822 THJ3823

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    ic 8040

    Abstract: MPSH81C D29A4 MPSD52C
    Text: S P R A G U E/ S EM IC O N D \ GROUP 85 14 01 9 SPRAGUE, T3 Ô513050 000357 5 “J • D 93 D 0 3 5 7 5 2 ^ S E M I C O N D S / ICS \ BIPOLAR TRANSISTOR CHIPS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type


    OCR Scan     		PDF MPSA92C MPSA93C MPSD51C MPSD52C MPSD53C MPSD54C MPSD55C MPSD56C MPSH81C MPSL51C ic 8040 D29A4

    pal 003a

    Abstract: powerex CLAMP JS0225A1 JS0230A1 KEE525B0 baker street T39 diode on 614 power transistor PAL 0LL A
    Text: POldEREX INC 7294621 POWEREX TflD D 7 S ci 4 b 2 1 IN C 98D fOHEWCt_ Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 * 0002431 0 2 4 3 1 D 3 ^ KEE525B0 In t e g r a l B ß k ß r C la m p Six-Darlington Transistor Module 8 Amperes/300 Volts


    OCR Scan     		PDF KEE525B0 Amperes/300 KEE525B0 pal 003a powerex CLAMP JS0225A1 JS0230A1 baker street T39 diode on 614 power transistor PAL 0LL A

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5460 TENTATIVE TO SH IBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE L f if i Unit in mm D Y N A M IC FOCUS APPLICATIONS 8.3MAX. HIGH VOLTAGE SW ITCHING APPLICATIONS w r ;n v n i T A n F H ig h a m p iif if r appi 0 3.1 ± 0.1 i r a t id n ç 3:


    OCR Scan     		PDF 2SC5460

    647 transistor

    Abstract: TA6206 cascode transistor array
    Text: H A RR IS S E M I C O N D S E C T O R ¡SjHARRIS blE D • 4 3 02 27 1 0 0 4 7 0 H b b46 « H A S 1A1197 Æ U S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features • Gain Bandwidth Product (fT Description .>1GHz


    OCR Scan     		PDF 1A1197 CA3127* CA3127 500MHz. CA3127 100MHz 647 transistor TA6206 cascode transistor array

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8201 T O SH IB A FIELD EFFECT TRANSISTOR SILICON N CH A N N EL M O S TYPE tt-M O SV I T P f » 7 fl 1 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE B O O K PC PORTABLE M A C H IN E S A N D TOOLS • Low Drain-Source ON Resistance • High Forward Transfer Adm ittance: |Yfs|= 6 S (Typ.)


    OCR Scan     		PDF TPC8201 10/iA --24V,

    Untitled

    Abstract: No abstract text available
    Text: 19-0225; Rev 1; 7/94 5V /3.3V /3V or Adjustable, High-Efficiency, Low IQ, Step-Down DC-DC Controllers These devices use m iniature external com ponents. Their high switching frequency up to 300kHz allows for less than 9mm diameter surface-mount inductors.


    OCR Scan     		PDF 300kHz) MAX649/MAX651/MAX652 AX649) MAX651) MAX652) MAX639/MAX640/MAX653 MAX651 MAX651CSA MAX651C/D MAX651EPA

    transistor IR 652 P

    Abstract: FS Series Miniature Power Film TH Resistor MAX649CSA
    Text: ykiyjxiw i 19-0225; Rev 1; 7/94 , 5 V /3 .3 V /3V or Adjustable High-Efficiency, Low IQ, Step-Down DC-DC Controllers T he se d e v ic e s use m in ia tu re e xte rn a l c o m p o n e n ts . Their high sw itch in g fre q u e n cy up to 300kHz allows for less than 9mm diam eter surface-m ount inductors.


    OCR Scan     		PDF 100nA MAX649) MAX651) MAX652) 300kHz AX649/MAX651/MAX652 MAX651 MAX651CSA MAX651C/D MAX651EPA transistor IR 652 P FS Series Miniature Power Film TH Resistor MAX649CSA

    ROE eb capacitor

    Abstract: No abstract text available
    Text: 7 ^ 2 3 7 G 0225b 4 T S G S - T H O M S O N ^ 0 g ^ ( s lL iÙ ir [ K M 0 S 30E D S G S-THOMSON 3.5A SWITCHING REGULATOR ADVANCE DATA • ■ ■ ■ ■ ■ ■ ■ . ■ ■ ■ ■ 3.5A OUTPUT CURRENT 5.1 V TO 40V OUTPUT VOLTAGE RANGE 0 TO 90% DUTY CYCLE RANGE


    OCR Scan     		PDF 0225b 200KHz L4974 10OKHz) V/12V L4970. L4974 100KHz ROE eb capacitor

    Untitled

    Abstract: No abstract text available
    Text: SynSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT5550LT1 TRANSISTOR NPN FEATURES Power dissipation Pcm : 0225 W (Tamb=25 °C) Collector current ICM: 0.6 A Collector base voltage 160 V Operating and storage junction temperature range


    OCR Scan     		PDF MMBT5550LT1 OT-23

    Diode LT 9250

    Abstract: diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19
    Text: S G S- TH OM SO N O STC D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) T H O M S O N -C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 02252 HIGH EFFICIENCY


    OCR Scan     		PDF 00G2252 CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 Diode LT 9250 diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19

    Motorola TE 2556

    Abstract: S9430 TE 2556 MAX649CSA 7411 3 INPUT AND gate 915 DCDC plv nichicon si9430 ic Siliconix mosfet guide dcdc smta resistor
    Text: 19-0225; Rev 3; 9/97 -•ssg T 5 V / 3 . 3 V / 3 V or Adjustable, High-Efficiency, Low IQ, S te p-D ow n DC-DC Controllers T hese d e v ic e s use m in ia tu re e xte rn a l co m p o n e n ts . Their high sw itching freq u e n cy up to 300kHz allows for less than 9mm diam eter surface-m ount inductors.


    OCR Scan     		PDF MAX649/MAX651 /MAX652 300kHz) Motorola TE 2556 S9430 TE 2556 MAX649CSA 7411 3 INPUT AND gate 915 DCDC plv nichicon si9430 ic Siliconix mosfet guide dcdc smta resistor