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    TRANSISTOR OF BLOCK DIAGRAM Search Results

    TRANSISTOR OF BLOCK DIAGRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR OF BLOCK DIAGRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CHT-TIT9570A

    Abstract: sic normally on fet
    Text: The Leader in High Temperature Semiconductor Solutions Version: 1.2 22-Apr-11 Last Modification Date CHT-THEMIS Power Transistor Driver Controller General description Features CHT-THEMIS is the controller block of the Power Transistor Driver solution CHTTHEMIS and CHT-ATLAS. The chipset is


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    PDF 22-Apr-11 DS-100782 CHT-TIT9570A sic normally on fet

    darlington pair transistor

    Abstract: 6LF6 common collector amplifier circuit designing micro-x mhz ghz microwave GRM188R71E473K Amplifier SOT-89 c4 0603CS-33NX_LU SKY65014 sky65015-70lf transistor Common Base configuration
    Text: APPLICATION NOTE Gain Block Bias Networks Introduction Skyworks gain block amplifiers are InGaP/GaAs HBT integrated circuits. They use a Darlington-pair transistor configuration with bias and feedback resistors properly selected to determine the gain, input and output impedances and bias parameters. A schematic representation of the amplifier is shown in Figure 1.


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    Untitled

    Abstract: No abstract text available
    Text: TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 3A 0.17V @ IC=1A, IB=0.2A Block Diagram ● Low spread of dynamic parameters ● High switching speed ●


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    PDF TS13005CK O-126 TS13005CK 50pcs

    Untitled

    Abstract: No abstract text available
    Text: MN34041PL 1.1 Product Summary • Outline This is a MOS-type sensor of 1/3 type offering 2.1 mega pixels. This product consists of embedded photodiode, pixel block by MOS transistor, column AD converter, built-in timing generator TG , high speed serial output I/F and functional


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    PDF MN34041PL 12-bit

    Untitled

    Abstract: No abstract text available
    Text: MN34041PL 1.1 Product Summary • Outline This is a MOS-type sensor of 1/3 type offering 2.1 mega pixels. This product consists of embedded photodiode, pixel block by MOS transistor, column AD converter, built-in timing generator TG , high speed serial output I/F and functional


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    PDF MN34041PL 12-bit

    relay omron G2

    Abstract: DRT2-MD16TA-1 DRT2-ID16TA omron limit switch Omron G2 DC24V IEC61000-4-4 Solenoid valve solenoid block valve omron solenoid valve
    Text: Transistor Remote I/O Terminals with 3-tier Terminal Blocks DRT2-@D16TA -1 A Smart Slave with a 3-tier Terminal Block That Means Wiring Locations Are Easy to Understand with No Sharing of Terminals. • Easy wiring with no sharing of terminals. Easy-to-understand wiring


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    PDF D16TA relay omron G2 DRT2-MD16TA-1 DRT2-ID16TA omron limit switch Omron G2 DC24V IEC61000-4-4 Solenoid valve solenoid block valve omron solenoid valve

    Untitled

    Abstract: No abstract text available
    Text: TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer


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    PDF TS13005CK O-126 TS13005CK 50pcs

    FX-16EYT-TB

    Abstract: FRC5-C20S53T-OL FRC5-AO20-3TOS mitsubishi FX on 16EYT what is com1 com2 on A 177 transistor fx2 mitsubishi FX-HOT001A FRC2-AO20-3OS
    Text: FX-HOT001A DATE: JULY 1993 PAGE: 1 OF 1 TM SPECIFICATIONS OF THE FX-16EYT-TB Introduction The FX-16EYT-TB is a remote termination block for use with all FX2C base units. This particular model has 16 transistor outputs and can be mounted up to 5 meters 16 feet, 4.85 inches from the base unit depending on


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    PDF FX-HOT001A FX-16EYT-TB FX-16EYT-TB FX-16E-150/ 500CAB 16EYT FRC5-C20S53T-OL FRC2-C20S13-OL HIF3BA-20PA2 HIF38A-20D-2 FRC5-C20S53T-OL FRC5-AO20-3TOS mitsubishi FX on what is com1 com2 on A 177 transistor fx2 mitsubishi FX-HOT001A FRC2-AO20-3OS

    Untitled

    Abstract: No abstract text available
    Text: XC9515 Series ETR0706-010 2 channel Synchronous Step-Down DC/DC Converter with Manual Reset •GENERAL DESCRIPTION The XC9515 series consists of 2 channel synchronous step-down DC/DC converters and a voltage detector with delay circuit built-in. The DC/DC converter block incorporates a P-channel 0.35Ω TYP. driver transistor and a synchronous N-channel


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    PDF XC9515 ETR0706-010 800mA.

    Untitled

    Abstract: No abstract text available
    Text: XC9515 Series ETR0706-011 2 channel Synchronous Step-Down DC/DC Converter with Manual Reset •GENERAL DESCRIPTION The XC9515 series consists of 2 channel synchronous step-down DC/DC converters and a voltage detector with delay circuit built-in. The DC/DC converter block incorporates a P-channel 0.35Ω TYP. driver transistor and a synchronous N-channel


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    PDF XC9515 ETR0706-011 800mA.

    Untitled

    Abstract: No abstract text available
    Text: XC9515 Series ETR0706-012b 2 channel Synchronous Step-Down DC/DC Converter with Manual Reset GENERAL DESCRIPTION The XC9515 series consists of 2 channel synchronous step-down DC/DC converters and a voltage detector with delay circuit built-in. The DC/DC converter block incorporates a P-channel 0.35 TYP. driver transistor and a synchronous N-channel


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    PDF XC9515 ETR0706-012b 800mA.

    CDRH4D28C

    Abstract: QFN-20 XC9515B
    Text: XC9515 Series ETR0706-012 2 channel Synchronous Step-Down DC/DC Converter with Manual Reset •GENERAL DESCRIPTION The XC9515 series consists of 2 channel synchronous step-down DC/DC converters and a voltage detector with delay circuit built-in. The DC/DC converter block incorporates a P-channel 0.35Ω TYP. driver transistor and a synchronous N-channel


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    PDF XC9515 ETR0706-012 800mA. CDRH4D28C QFN-20 XC9515B

    Untitled

    Abstract: No abstract text available
    Text: XC9515 Series ETR0706-009 2 channel Synchronous Step-Down DC/DC Converter with Manual Reset •GENERAL DESCRIPTION The XC9515 series consists of 2 channel synchronous step-down DC/DC converters and a voltage detector with delay circuit built-in. The DC/DC converter block incorporates a P-channel 0.35Ω TYP. driver transistor and a synchronous N-channel


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    PDF XC9515 ETR0706-009 800mA.

    XC9515

    Abstract: rh4d28 XC9515B
    Text: XC9515 Series ETR0706-012b 2 channel Synchronous Step-Down DC/DC Converter with Manual Reset •GENERAL DESCRIPTION The XC9515 series consists of 2 channel synchronous step-down DC/DC converters and a voltage detector with delay circuit built-in. The DC/DC converter block incorporates a P-channel 0.35Ω TYP. driver transistor and a synchronous N-channel


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    PDF XC9515 ETR0706-012b 800mA. rh4d28 XC9515B

    CDRH4D28C

    Abstract: QFN-20
    Text: XC9515 Series ETR0706-008 2 channel Synchronous Step-Down DC/DC Converter with Manual Reset •GENERAL DESCRIPTION The XC9515 series consists of 2 channel synchronous step-down DC/DC converters and a voltage detector with delay circuit built-in. The DC/DC converter block incorporates a P-channel 0.35Ω TYP. driver transistor and a synchronous N-channel


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    PDF XC9515 ETR0706-008 800mA. CDRH4D28C QFN-20

    XR-2011

    Abstract: XR2011 XR2013CN XR2013 XR-2012
    Text: Z * EX4R XR-2011/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic


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    PDF XR-2011/12/13/14 XR-2011/2012/2013/2014 XR-1568M XR-1568/XR-1468C XR-1468/1568 XR-2011 XR2011 XR2013CN XR2013 XR-2012

    2002cn

    Abstract: XR-2001 XR-2001CN XR-2002 XR-2002CN XR-2003 XR-2003CN XR-2004 XR-2004CN
    Text: Z * EXAR XR-2001/2/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM V The XR-2001/2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic


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    PDF XR-2001/2/3/4 XR-2001 XR-1568M XR-1568/XR-1468C XR-1468/1568 2002cn XR-2001CN XR-2002 XR-2002CN XR-2003 XR-2003CN XR-2004 XR-2004CN

    Untitled

    Abstract: No abstract text available
    Text: XR-2001 /2/3/A KSr EXAR High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION - W The XR-2001 /2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic


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    PDF XR-2001 XR-1568M XR-1568/XR-1468C XR-1468/1568

    XR-2203

    Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
    Text: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil­ icon NPN Darlington pairs on a single monolithic sub­


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    PDF XR-220172/3/4 XR-2201, XR-2202, XR-2203, XR-2204 500mA XR-1568M XR-1568/XR-1468C XR-1468/1568 XR-2203 XR-2203CP XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204

    XR2200

    Abstract: XR-2200 XR2200CP XR-1489 transistor A 1568
    Text: TSr EXAR XR-2200 Hammer Driver FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2200 is an array of five Darlington transistor pairs which are capable of driving high-current loads such as solenoids, relays, and LED ’s. Each of the five circuits contained on the XR-2200 is capable of sinking


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    PDF XR-2200 XR-2200 XR-1568M XR-1568/XR-1468C XR-1468/1568 XR2200 XR2200CP XR-1489 transistor A 1568

    bh6620k

    Abstract: Fdd spindle motor circuit 300 BA1300 ba6476 BA6487AFP-Y ba6479afp-y BA6600 FDD STEPPER MOTOR BA658 fdd spindle controller
    Text: I, 1 FDD Block Diagram of Typical Applications PHOTO INTERRUfTER Single-chip FDD a- ailable in full-custom design Read/write ampliiier BA6600 Series Side "O' Side “1" I FDD controller S2PCS Series PHOTO REFLECTOR I Motor driver Transistor array BA6470/ 80


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    PDF BA6600 BA12000 BA13000 QFP44 QFP32 QFP32 bh6620k Fdd spindle motor circuit 300 BA1300 ba6476 BA6487AFP-Y ba6479afp-y FDD STEPPER MOTOR BA658 fdd spindle controller

    ne5504n

    Abstract: NE5501 NE5503N Ne5502 NE5504 cmos open collector NE5501N Transistor 5503
    Text: N E5501/5502/5503/5504-N DESCRIPTION BLOCK DIAGRAM PIN CONFIGURATION These high-voltage, high-current Darling­ ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a common m onolithic substrate. All units feature open collector outputs and integral suppression


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    PDF E5501/5502/5503/5504-N 600mA NE5501 NE5502 NE5504 /5502/5503/5504-N NE5503 ne5504n NE5503N NE5504 cmos open collector NE5501N Transistor 5503

    ba6489fs

    Abstract: BA6479AFP-Y BA6608K BA6489 BA6608 1450 transistor ba6485 BA6845 BA6491FS Fdd spindle motor circuit 300
    Text: ranrn ICs for Industrial Equipment FDD Block Diagram of Typical Applications « Single-chip FD D available in tuli-custom design Read/write amplifier Side BA M O O S e rte Side Motor driver Transistor array c= => f FDO controller S2PCS Series SA6470/ 80 $9 0 9 »


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    PDF SA6470/ BA6569K BA6600K BA6607K BA6608K BA6610AK BA6612K VBH6620K BA12000 BA13000 ba6489fs BA6479AFP-Y BA6489 BA6608 1450 transistor ba6485 BA6845 BA6491FS Fdd spindle motor circuit 300

    XR-2012

    Abstract: L1342
    Text: EX AR CO RP 34 2 2 6 18 EXAR CORP ^j| 34221310 G Q O S Q V ? 7 ~ HST E X A R 9 1D 0 5 0 7 7 X R -2 0 1 1/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The X R -2 0 1 1/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven


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