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    TRANSISTOR N1 SMD CODE Search Results

    TRANSISTOR N1 SMD CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR N1 SMD CODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.


    Original     		BC847QAS DFN1010B-6 OT1216) BC857QAS. BC847QAPN. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 25 July 2014 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847QAS.


    Original     		BC857QAS DFN1010B-6 OT1216) BC847QAS. BC847QAPN. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PBSS5260QA DFN1010D-3 OT1215) PBSS4260QA. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PBSS4260QA DFN1010D-3 OT1215) PBSS5260QA. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PBSS5130QA DFN1010D-3 OT1215) PBSS4130QA. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB65UPE DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB56EN DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB75UPE DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB75UPE DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		NX7002BKXB DFN1010B-6 OT1216) PDF

    TDA8842 s1

    Abstract: ALP018TT BLV1819-30 TDA8842 S1 tda8842 s1 datasheet TDA8842 S1 TDA4859ps OH191 blv1819-4a blv1819 BAX12 equivalent
    Text: PHILIPS SEMICONDUCTORS Product Discontinuation Notice DN47 June 30, 2002 SEE DN47 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		SoY22187A3 31-Mar-03 30-Jun-03 vy22187b3 VY22254-4 VY22254-4 vy22402a2 TDA8842 s1 ALP018TT BLV1819-30 TDA8842 S1 tda8842 s1 datasheet TDA8842 S1 TDA4859ps OH191 blv1819-4a blv1819 BAX12 equivalent PDF

    philips ON5134 transistor

    Abstract: on5134 triacs bt 804 600v BT 804 triac tda3612 Triac bt 808 SMD Transistor W02 TRIAC BT 812 OM8838ps D203B
    Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN48A Exhibit A January 21, 2003 SEE DN48A NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		DN48A DN48A philips ON5134 transistor on5134 triacs bt 804 600v BT 804 triac tda3612 Triac bt 808 SMD Transistor W02 TRIAC BT 812 OM8838ps D203B PDF

    smd transistor 2xX

    Abstract: smd TRANSISTOR sot-23 a2 marking r25 sot23 KTY 10-6 transistor Kty 10.6 SOT R25 smd sot-23 code marking 106 KT 100 tube KTY 19M SMD transistor 2x sot 23
    Text: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F


    Original     		OT-23 BSS303 19-6M/Z M10x1 1/8x27 GMX05639 smd transistor 2xX smd TRANSISTOR sot-23 a2 marking r25 sot23 KTY 10-6 transistor Kty 10.6 SOT R25 smd sot-23 code marking 106 KT 100 tube KTY 19M SMD transistor 2x sot 23 PDF

    KTY 110

    Abstract: KTY 19M KTY 10-6 KTY 11-6 smd marking 6z KT 209 kty 1000 KTY 88 marking r25 sot23 KTY 10-7
    Text: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F


    Original     		OT-23 BSS303 19-6M/Z M10x1 1/8x27 GMX05639 KTY 110 KTY 19M KTY 10-6 KTY 11-6 smd marking 6z KT 209 kty 1000 KTY 88 marking r25 sot23 KTY 10-7 PDF

    SOC3810HRB

    Abstract: transistor st 431 SOC38 ESCC SOC3810 2N3810
    Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet — production data Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics


    Original     		2N3810HR 2N3810HR SOC3810HRB transistor st 431 SOC38 ESCC SOC3810 2N3810 PDF

    SMD CODE N8

    Abstract: smd transistor marking P7 SMD TRANSISTOR N10 smd transistor n6 TRANSISTOR SMD MARKING CODE n10 4 mhz crystal oscillator SMD CODE N10 sda 3202 prescaler smd transistor marking n5 SMD TRANSISTOR N13
    Text: MGP 3006X GHz PLL with I2C Bus and Four Chip Addresses Bipolar IC Features ● ● ● ● ● ● 1-chip system for MPU-control I2C Bus 4 programmable chip addresses Short pull-in time for quick channel switch-over and optimized loop stability 2 high-current band switch outputs (20 mA)


    Original     		3006X P-DSO-14-1 Q67000-H5114 Q67006-H5114 P-DSO-14-1 3006X SMD CODE N8 smd transistor marking P7 SMD TRANSISTOR N10 smd transistor n6 TRANSISTOR SMD MARKING CODE n10 4 mhz crystal oscillator SMD CODE N10 sda 3202 prescaler smd transistor marking n5 SMD TRANSISTOR N13 PDF

    SMD TRANSISTOR N8

    Abstract: TRANSISTOR SMD MARKING CODE n10 smd transistor marking p7 TRANSISTOR SMD MARKING CODE p1 P7, N4 transistor TRANSISTOR SMD MARKING CODE n9 SMD CODE N8 SMD CODE N10 smd transistor cy SMD TRANSISTOR N10
    Text: MGP 3006X GHz PLL with I2C Bus and Four Chip Addresses Bipolar IC Features ● ● ● ● ● ● 1-chip system for MPU-control I2C Bus 4 programmable chip addresses Short pull-in time for quick channel switch-over and optimized loop stability 2 high-current band switch outputs (20 mA)


    Original     		3006X P-DSO-14-1 Q67000-H5114 Q67006-H5114 P-DSO-14-1 3006X SMD TRANSISTOR N8 TRANSISTOR SMD MARKING CODE n10 smd transistor marking p7 TRANSISTOR SMD MARKING CODE p1 P7, N4 transistor TRANSISTOR SMD MARKING CODE n9 SMD CODE N8 SMD CODE N10 smd transistor cy SMD TRANSISTOR N10 PDF

    sot 363 dual smd ea code transistor

    Abstract: smd diode 4pin D13 BAT6203WE scl 1444 ADUM1250ARZ CB6 smd transistor smd diode 4pin D11 EA 5pin transistor smd transistor A1 J45 USBMULTILINKBDME
    Text: ISL9208EVAL2Z Rev. A User Guide Application Note Description This document is intended for use by individuals engaged in the development of hardware for a 4 to 7 series connected Li-ion battery pack using the ISL9208EVAL2Z board. The evaluation kit consists of the ISL9208EVAL2Z board.


    Original     		ISL9208EVAL2Z ISL9208EVAL2Z AN1444 sot 363 dual smd ea code transistor smd diode 4pin D13 BAT6203WE scl 1444 ADUM1250ARZ CB6 smd transistor smd diode 4pin D11 EA 5pin transistor smd transistor A1 J45 USBMULTILINKBDME PDF

    ESCC 5207 005

    Abstract: 2N3810HR 2N3810HRG
    Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features 21 3 4 56 BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor


    Original     		2N3810HR 2N3810HR DocID15385 ESCC 5207 005 2N3810HRG PDF

    MARKING CODE SMD IC 531

    Abstract: TRANSISTOR SMD MARKING CODE 1 KW
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77


    Original     		2N2920AHR 2N2920AHR DocID15383 MARKING CODE SMD IC 531 TRANSISTOR SMD MARKING CODE 1 KW PDF

    N14 SMD

    Abstract: 3302-5X6 TRANSISTOR SMD MARKING CODE n9 H5111 P7, N4 transistor 3302X6 P-DSO-16-1 P-DIP-18 SDA3302 smd transistor n6
    Text: 2 SDA 3302 Family GHz PLL with I C Bus and Four Chip Addresses Preliminary Data Bipolar IC Features ● 1-chip system for MPU control I2C bus ● 4 programmable chip addresses ● Short pull-in time for quick channel switch-over and optimized loop stability


    Original     		P-DIP-18-5 P-DSO-20-1 P-DSO-16-1 Q67000-H5112 3302-5X Q67000-H5111 3302-5X6 Q67000-H5110 N14 SMD 3302-5X6 TRANSISTOR SMD MARKING CODE n9 H5111 P7, N4 transistor 3302X6 P-DSO-16-1 P-DIP-18 SDA3302 smd transistor n6 PDF

    2n3904 smd pin configuration

    Abstract: 560 K. 561 k SMD 653K HCPL-5501 hp 1002 HP 2531 4N55 6N135 6N136 HCPL-2530
    Text: H Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device Part Number and DESC


    Original     		HCPL-553X HCPL-653X HCPL-655X HCPL-550X MIL-PRF-38534 QML-38534, 6N135, 6N136, HCPL-2530/ HCPL-5530) 2n3904 smd pin configuration 560 K. 561 k SMD 653K HCPL-5501 hp 1002 HP 2531 4N55 6N135 6N136 HCPL-2530 PDF

    marking code ff SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE 1l 6 pin TRANSISTOR SMD CODE PA marking code ff p SMD Transistor TRANSISTOR SMD MARKING CODE 458 SMD Transistor 7f siemens siemens TLE-5206 5206-2 TLE 5206-2G smd code book dual transistors
    Text: SIEM EN S 5-A H-Bridge for DC-Motor Applications TLE 5206-2 Preliminary Data Overview Features • • • • • • • • • • • • Delivers up to 5 A continuous 6 A peak current Optimized for DC motor management applications Operates at supply voltages up to 40 V


    OCR Scan     		P-T0220-7-11 P-DSO-20-10 Q67000-A9290 P-T0220-7 6x127] -f0Tor25Â fl235bOS 010374T P-T0220-7-12 marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE 1l 6 pin TRANSISTOR SMD CODE PA marking code ff p SMD Transistor TRANSISTOR SMD MARKING CODE 458 SMD Transistor 7f siemens siemens TLE-5206 5206-2 TLE 5206-2G smd code book dual transistors PDF

    Siemens MTT 95 A 12 N

    Abstract: Siemens MTT 95 A 16 N SDA3412X SDA3412 SMD TRANSISTOR N13 Siemens MTT 95 A 08 N N7 2C SMD Transistor transistor smd marking JR P5 smd transistor Siemens MTT 40 A 12 N
    Text: bSE D • fiS3SbOS DQS3SM3 b2b M S I E G SIEM EN S _ SIEMENS AKTIENGESELLSCHAF ■ ' GHz PLL with I 2C Bus and In-Lock Detector SDA 3412X Bipolar 1C Preliminary Data Features • 1-chip system for MPU control I 2C bus • 1 fixed, 3 programmable chip addresses


    OCR Scan     		3412X Q67000-H5060 Q67000-H5056 Q67006-H5056 P-DIP-18 P-DSO-20 P-DSO-20 P-DSO-16 2048xn11 Siemens MTT 95 A 12 N Siemens MTT 95 A 16 N SDA3412X SDA3412 SMD TRANSISTOR N13 Siemens MTT 95 A 08 N N7 2C SMD Transistor transistor smd marking JR P5 smd transistor Siemens MTT 40 A 12 N PDF