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    TRANSISTOR MRF433 Search Results

    TRANSISTOR MRF433 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MRF433 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


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    PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    HF20-12F

    Abstract: MRF433 Class 2.2 SD1285
    Text: HF20-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF20-12F is Designed for 12.5 V Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF433 & SD1285 • PG = 15 dB Min. at 30MHz & 20W • Emitter Ballasting for ruggedness


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    PDF HF20-12F HF20-12F MRF433 SD1285 30MHz MRF433 Class 2.2 SD1285

    mrf433

    Abstract: HF20-12F SD1285 Transistor MRF433 3055a
    Text: HF20-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF20-12F is Designed for 12.5 V Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF433 & SD1285 • PG = 18 dB Typical at 30MHz & 20W • Withstands 20:1 Load VSWR


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    PDF HF20-12F HF20-12F MRF433 SD1285 30MHz mrf433 SD1285 Transistor MRF433 3055a

    MRF433

    Abstract: No abstract text available
    Text: MRF433 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF433 is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A E FEATURES: C Ø.125 NOM. FULL R J • PG = 15 dB min. at 10 W/30 MHz


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    PDF MRF433 MRF433

    MHW591

    Abstract: MHW592 MRF475 MHW591 equivalent motorola MHW592 MRF476 equivalent motorola application note AN-758 MRF476 fair-rite 2643006301 mrf475 transistor
    Text: Order this document by AN779/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN779 LOW-DISTORTION 1.6 TO 30 MHz SSB DRIVER DESIGNS Prepared by: Helge O. Granberg RF Circuits Engineering GENERAL CONSIDERATION Two of the most important factors to be considered in


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    PDF AN779/D AN779 MHW591 MHW592 MRF475 MHW591 equivalent motorola MHW592 MRF476 equivalent motorola application note AN-758 MRF476 fair-rite 2643006301 mrf475 transistor

    TPV3100

    Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
    Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE


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    PDF twF150-50F HF150-50S HF250-50 HF100-28 HF220-28 HF220-50 TVU014 HF75-50S ASAT25 ASI4003 TPV3100 TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A

    ECG transistor replacement guide book free

    Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
    Text: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a


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    PDF UG-309 UG-201 UG-349 UG-1034 UG-146 UG-83 UG-318 UG-273 UG-255 ECG transistor replacement guide book free ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673

    philips ecg master replacement guide

    Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
    Text: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete


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    ECG transistor replacement guide book free

    Abstract: philips ecg master replacement guide one chip tv ic 8873 ecg semiconductors master replacement guide philips ecg semiconductors master replacement guide cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor
    Text: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    MRF221

    Abstract: mrf433 2N6081 2C6081
    Text: M O T O R O L A SC -CDIODES/OPTO} i 6367255 MOTOROLA SC 34 DE~|fc.3fc.7a5S 34c DIO DES/OPTO 003Ö071 38071 SILICON RF TRANSISTOR DICE (continued) 2C6081 DIE NO. — NPN LINE SOURCE — RF605.419 This die provides performance equal to or better than that of


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    PDF RF605 2N6081 MRF209 MRF221 MRF433 2C6081 mrf433 2C6081

    2204B

    Abstract: 1 WATT carbon RESISTOR MRF433 vk200 1N4001 vk200 rf choke K1004
    Text: MOTOROLA SC XSTRS/R F 4bE D b3b75S4 OCHMbbS b MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 12.5 W (PEP)- 3 0 MHz S IL IC O N R F POW ER T R A N S IS T O R S RF POWER TRANSISTOR . . . designed prim arily for application as com plem entary sym m etry


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    PDF b3b75S4 Mil-Std-1311 2204B, 1N4001 VK200 20/4B 2204B 1 WATT carbon RESISTOR MRF433 vk200 rf choke K1004

    2N6367

    Abstract: MRF420 2N5847 MRF425 EB-32 complementary symmetry amplifier 2N5848 2N5849 F450A MRF8004 MRF460
    Text: RF Transistors and Modules This selection guide contains the preferred registered and non-registered RF parts available. M otorola has selected 18 transistor/m odule chains fro m 1.5 to 6 0 0 W PEP o utp ut. A ll devices are designed, tested and optim ized fo r frequency ranges fro m 2 to 9 0 0 M H z. These devices are designed fo r yo u r advanced RF


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    PDF Power20 MRF425 45A-08 MRF460 MRF420 MRF421 EB-32 MK433. MRF8004 MRF449 2N6367 2N5847 EB-32 complementary symmetry amplifier 2N5848 2N5849 F450A

    8C547

    Abstract: MRF433
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 12.5 W PEP - 3 0 MHz SILICON RF POWER TRANSISTORS RF POWER TRANSISTOR . . . designed p rim a rily fo r a p p lic a tio n as c o m p le m e n ta ry s y m m e try NPN SILICON a m p lifie rs in line ar a m p lifie rs fro m 2.0 t o 3 0 M H z.


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    PDF 1N4001 VK200 1000oF 8C547 MRF433

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


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    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


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    PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239