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    TRANSISTOR MOSFET 536 Search Results

    TRANSISTOR MOSFET 536 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MOSFET 536 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UGF16085 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed specially for satellite communication applications in frequency range from 1626 to 1661 MHz. Rated with a minimum output power of 85W. This device is ideal for 16QAM, TDMA,


    Original     		PDF UGF16085 661GHz, 16QAM, UGF16085

    1661m

    Abstract: transistor 1661 equivalent Cree Microwave TANT-E UGF16085 85-W 85w sot23
    Text: UGF16085 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed specially for satellite communication applications in frequency range from 1626 to 1661 MHz. Rated with a minimum output power of 85W. This device is ideal for 16QAM, TDMA,


    Original     		PDF UGF16085 661GHz, 16QAM, 85Whorized UGF16085 1661m transistor 1661 equivalent Cree Microwave TANT-E 85-W 85w sot23

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


    Original     		PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3

    IGBT rectifier theory

    Abstract: static characteristics of mosfet and igbt IGBT THEORY AND APPLICATIONS mosfet switch ultra fast IGBT THEORY AND APPLICATIONS 400V
    Text: New Power Module Structure for Efficiency Improvement in Fast Switching Power Applications >50kHz, >1kW Temesi, Zsadany, Frisch Mar. 2005, TYCO Electronics / Power Systems Power applications are forced to work at higher frequencies. This is caused by the


    Original     		PDF 50kHz, IGBT rectifier theory static characteristics of mosfet and igbt IGBT THEORY AND APPLICATIONS mosfet switch ultra fast IGBT THEORY AND APPLICATIONS 400V

    TRANSISTOR ww1

    Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
    Text: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY


    Original     		PDF BLF548 AN98021 BLF548 SCA57 TRANSISTOR ww1 mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350

    BC337

    Abstract: BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


    Original     		PDF BUK107-50DS SC13a SCA54 137087/1200/02/pp12 BC337 BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage

    BUK107-50GL

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50GL PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


    Original     		PDF BUK107-50GL SC13a SCA54 137087/1200/01/pp11 BUK107-50GL

    4466 8 pin mosfet pin voltage

    Abstract: 501 mosfet transistor BUK107-50DL
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DL PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


    Original     		PDF BUK107-50DL SC13a SCA54 137087/1200/02/pp12 4466 8 pin mosfet pin voltage 501 mosfet transistor BUK107-50DL

    SC1420X

    Abstract: No abstract text available
    Text: Tuning Fork Level Switch visit our website PRODUCT INTRODUCTION WORKING PRINCIPLE APPLICATION The FineTek tuning fork level switch is suitable level control switch for liquids, sludges, petroleums as well solid level detection of almost any granular, sandy, chip like, powdery, low bulk density


    Original     		PDF D-65428 08-SC02-B1-EP, SC1420X

    SONY APS 252 power supply

    Abstract: 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor
    Text: Power−Supply Cookbook Maxim Power Supply Cookbook Compiled: November 2010 Available at: http://www.maxim−ic.com/cookbook/ Maxim has developed power supplies for a wide range of applications. Choose the specifications that most closely meet your needs. Then view a circuit design, complete with schematic diagram and


    Original     		PDF CDRH6D28-100 MAX1701 100uF 100pF 560pF NDC632P QS03L 220uF SONY APS 252 power supply 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor

    BB405

    Abstract: BF998WR 4814 mosfet dual-gate MGC480
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR


    Original     		PDF BF998WR SCA55 117067/00/02/pp12 BB405 BF998WR 4814 mosfet dual-gate MGC480

    mosfet K 2865

    Abstract: 4814 mosfet BF909WR dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR


    Original     		PDF BF909WR SCA55 117067/00/02/pp12 mosfet K 2865 4814 mosfet BF909WR dual-gate

    BIT 3195 G

    Abstract: TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ
    Text: Allegro MicroSystems Fax-on-Demand: 1-888-286-9288 Outside North America: 1-202-216-1827 ICs and PMCMs PRODUCT INDEX in NUMERICAL ORDER Part Number* Description 8932-A 8958 Motor Drivers Quad, 1.8 A, 50 V Darlington Power Driver Quad, 1.8 A, 50 V Darlington Power Driver


    Original     		PDF 932-A BIT 3195 G TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ

    optocoupler ic 7811

    Abstract: 6 pin STR smps IC TEA1504 opto coupler 817 STR 6707 SMPS CIRCUIT optocoupler 7811 STR 6707 SMPS CIRCUIT diagram str SMPS CIRCUIT DIAGRAM ic tea1504 optocoupler using 7811
    Text: INTEGRATED CIRCUITS DATA SHEET TEA1504 GreenChip; SMPS control IC Preliminary specification File under Integrated Circuits, IC11 1998 Mar 17 Philips Semiconductors Preliminary specification GreenChip; SMPS control IC TEA1504 PRODUCT HIGHLIGHTS Distinctive features


    Original     		PDF TEA1504 SCA57 295102/1200/01/pp20 optocoupler ic 7811 6 pin STR smps IC TEA1504 opto coupler 817 STR 6707 SMPS CIRCUIT optocoupler 7811 STR 6707 SMPS CIRCUIT diagram str SMPS CIRCUIT DIAGRAM ic tea1504 optocoupler using 7811

    zener T 4148

    Abstract: zener 1n 4148 1n 4148 zener diode RF154 zener 1n f154 749 MOSFET TRANSISTOR motorola Zener Diode 4148
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages In the 2 .0 -1 0 0 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics


    OCR Scan     		PDF MRF154 zener T 4148 zener 1n 4148 1n 4148 zener diode RF154 zener 1n f154 749 MOSFET TRANSISTOR motorola Zener Diode 4148

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    6n20e

    Abstract: mosfet 4532 4532 MOSFET
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced TM OS E -F E T is designed to w ithstand high energy in the avalanche and commutation modes. The new energy


    OCR Scan     		PDF

    HG62G

    Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
    Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2


    OCR Scan     		PDF PF0025 PF0026 NMT900, PF0027 PF0030 PF0031 NMT900 PF0032 PF0040 PF0042 HG62G HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035

    CA3081

    Abstract: avalanche mode transistor
    Text: — COMMUNICATIONS'5 STANDARD PRODUCTS PAGE Standard Products Selection Guides Data Acquisition Selection G uide.


    OCR Scan     		PDF RF1K49088 RF1K49090 RF1K49092 F1K49093 RF1K49156 RF1K49157 AN9640 com/appnotea/an9640/ RF1K49154 CA3081 avalanche mode transistor

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9130 D, R, H 5flE D • 4302E71 0045776 536 H H A S 2N7308D, 2N7308R 2N7308H Radiation Hardened P-Channel Power MOSFETs December 1992 T '3 f -/f Features


    OCR Scan     		PDF FRL9130 4302E71 2N7308D, 2N7308R 2N7308H -100V, 100KRAD 300KRAD 1000KRAD 3000KRAD

    EL 817 c337

    Abstract: transistor c337 c337 transistor C337 W 61 DS4005
    Text: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF BUK107-50DS SC13a BUK107-50 SCA54 137087/1200/02/pp12 EL 817 c337 transistor c337 c337 transistor C337 W 61 DS4005

    tda 2038

    Abstract: TDA3791 tda vertical IC tv crt tda 3658 dbx 2151 TDA8302 tda9854 TDA 3030 tda 2790 transistor BF960
    Text: Philips Semiconductors Selection guide Alphanumerical index ALPHANUMERICAL INDEX PAGE 80C528; 83C528 CMOS single-chip 8-bit microcontroller; l2C-bus 80C652; 83C652 CMOS single-chip 8-bit microcontroller; l2C-bus 44 50 83C654 CMOS single-chip 8-blt microcontroller; l2C-bus


    OCR Scan     		PDF 80C528; 83C528 80C652; 83C652 83C654 83CE654 84C44X; 84C64X; 84C84X 87C528 tda 2038 TDA3791 tda vertical IC tv crt tda 3658 dbx 2151 TDA8302 tda9854 TDA 3030 tda 2790 transistor BF960

    TDA2658

    Abstract: BB909B VARICAP DIODE IC SOUND 2026 TDA 2038 tda2593 application TDA3791 tda vertical IC tv crt tda3833 TDA4865 philips audio amplifier ic guide
    Text: Philips Semiconductors Selection guide Functional index PAGE TUNING/TUNER Tuning SAB6456; SAB6456T Sensitive 1 GHz divide-by-64/divide-by-256 switchable prescaler 1347 SAB8726 Sensitive 2.6 GHz divide-by-2 prescaler 1353 TOA8725T Antenna signal processor 3785


    OCR Scan     		PDF SAB6456; SAB6456T SAB8726 OA8725T TSA5511 TSA5512 TSA5514 TSA5515T TSA5520; TSA5521 TDA2658 BB909B VARICAP DIODE IC SOUND 2026 TDA 2038 tda2593 application TDA3791 tda vertical IC tv crt tda3833 TDA4865 philips audio amplifier ic guide

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc