21045F
Abstract: AGR26045EF J500 JESD22-C101A c.d.m. technology acp transistor EP 430 TRANSISTOR MOSFET 2645
Text: AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26045EF
AGR26045EF
ACGR26045EF
AGR26045XF
21045F
12-digit
21045F
J500
JESD22-C101A
c.d.m. technology acp
transistor EP 430
TRANSISTOR MOSFET 2645
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k 2645 MOSFET
Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
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MRF6P27160H
MRF6P27160HR6
k 2645 MOSFET
K 2645 transistor
C1825C103J1RAC
TRANSISTOR MOSFET 2645
J204
mosfet j142
transistor d 2645
p 01 k 2645
A114
C101
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k 2645 MOSFET
Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22
Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
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MRF6P27160H
MRF6P27160HR6
k 2645 MOSFET
K 2645 transistor
NIPPON CAPACITORS
mosfet j142
100B3R3CP500X
A114
A115
AN1955
C101
JESD22
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k 2645 MOSFET
Abstract: K 2645 schematic circuit
Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
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MRF6P27160H
MRF6P27160HR6
k 2645 MOSFET
K 2645 schematic circuit
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26045EF
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AGR26180EF
Abstract: J500 JESD22-C101A j78 transistor j78 transistor equivalent
Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26180EF
AGR26180EF
DS04-112RFPP
J500
JESD22-C101A
j78 transistor
j78 transistor equivalent
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AGR26045EF
Abstract: J500 JESD22-C101A
Text: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26045EF
AGR26045EF
po8109-9138
DS04-226RFPP
DS04-110RFPP)
J500
JESD22-C101A
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mmds
Abstract: AGR26180EF J500 JESD22-C101A
Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26180EF
AGR26180EF
AGR19K180U
AGR26180XF
12-digit
mmds
J500
JESD22-C101A
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21045F
Abstract: No abstract text available
Text: Preliminary Data Sheet May 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26045E
AGR26045EU
AGR26045EF
AGR26045Eerican
DS04-110RFPP
21045F
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k 2645 MOSFET
Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
Text: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF6P27160H
MRF6P27160HR6
k 2645 MOSFET
K 2645 transistor
NIPPON CAPACITORS
transistor d 2645
z33 vishay
A114
A115
AN1955
C101
JESD22
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1N5408 equivalent
Abstract: Flyback Transformer Design EXCEL how to calculate SM power Supply Transformer BAL19LT1 Flyback Transformer Design EXCEL SPREADSHEET CTX22-16134 MC33260 application k 2645 MOSFET CTX22 diode zener c23
Text: AND8154/D NCP1230 90 Watt, Universal Input Adapter Power Supply Prepared by: Terry Allinder [email protected] ON Semiconductor http://onsemi.com APPLICATION NOTE General Description The NCP1230 implements a standard current mode control architecture. It’s an ideal candidate for applications
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AND8154/D
NCP1230
1N5408 equivalent
Flyback Transformer Design EXCEL
how to calculate SM power Supply Transformer
BAL19LT1
Flyback Transformer Design EXCEL SPREADSHEET
CTX22-16134
MC33260 application
k 2645 MOSFET
CTX22
diode zener c23
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CTX22-16134
Abstract: No abstract text available
Text: NCP1230GEVB NCP1230 90 Watt, Universal Input Adapter Power Supply Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL General Description Design Specification The NCP1230 implements a standard current mode control architecture. It’s an ideal candidate for applications
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NCP1230GEVB
NCP1230
EVBUM2131/D
CTX22-16134
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SRW42EC
Abstract: SRW42EC-U04H14 1.5KE25CA AND8124 106 35K resistor capacitor 106 35K D11/diode LP sd k 2645 MOSFET Flyback Transformer Design EXCEL SMT1206
Text: AND8124/D 90 W, Universal Input, Single Stage, PFC Converter http://onsemi.com General Description The NCP1651 demo board uses a quad operational amplifier on the secondary to perform multiple functions. One section of the amplifier is used as the error amplifier. A
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AND8124/D
NCP1651
SRW42EC
SRW42EC-U04H14
1.5KE25CA
AND8124
106 35K resistor
capacitor 106 35K
D11/diode LP sd
k 2645 MOSFET
Flyback Transformer Design EXCEL
SMT1206
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Untitled
Abstract: No abstract text available
Text: 19-2931; Rev 0; 8/03 -48V Hot-Swap Controller with External RSENSE The MAX5920A/MAX5920B provide a controlled turn-on to circuit cards preventing glitches on the power-supply rail and damage to board connectors and components. The MAX5920A/MAX5920B provide undervoltage, overvoltage, and overcurrent protection. These devices
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MAX5920A/MAX5920B
MAX5920A
MAX5920B
MS012
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backplane Layout power supply
Abstract: diode led uv SMAT70A LT1640 LT4250 MAX5921 MAX5921AESA MAX5939 RTN 980 MAX5921FESA
Text: 19-2946; Rev 0; 9/03 -48V Hot-Swap Controllers with External RSENSE and High Gate Pulldown Current Features ♦ Allows Safe Board Insertion and Removal from a Live -48V Backplane The MAX5921/MAX5939 provide a controlled turn-on to circuit cards preventing damage to board connectors,
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MAX5921/MAX5939
MAX5921
MAX5939
MS012
backplane Layout power supply
diode led uv
SMAT70A
LT1640
LT4250
MAX5921AESA
RTN 980
MAX5921FESA
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LT4250
Abstract: SMAT70A LT1640 MAX5921 MAX5921AESA MAX5939 MAX5921FESA MAX5921FESA T
Text: 19-2946; Rev 1; 2/06 -48V Hot-Swap Controllers with External RSENSE and High Gate Pulldown Current Features The MAX5921/MAX5939 hot-swap controllers allow a circuit card to be safely hot plugged into a live backplane. The MAX5921/MAX5939 operate from -20V to -80V and
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MAX5921/MAX5939
LT1640
LT4250
MS012
SMAT70A
MAX5921
MAX5921AESA
MAX5939
MAX5921FESA
MAX5921FESA T
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2N2222 SOA
Abstract: IRL540NS
Text: 19-2931; Rev 0; 8/03 -48V Hot-Swap Controller with External RSENSE Features ♦ Allows Safe Board Insertion and Removal from a Live -48V Backplane The MAX5920A/MAX5920B provide a controlled turn-on to circuit cards preventing glitches on the power-supply rail and damage to board connectors and components.
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MAX5920A/MAX5920B
LT4250
LT1640.
loa-0041B
21-0041B
2N2222 SOA
IRL540NS
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k 2645 MOSFET
Abstract: 2645 fet SMAT70A
Text: 19-3494; Rev 0; 11/04 -48V Hot-Swap Controllers with External RSENSE Features The MAX5949A/MAX5949B are hot-swap controllers that allow a circuit card to be safely hot plugged into a live backplane. The MAX5949A/MAX5949B operate from -20V to -80V and are well-suited for -48V power systems.
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MAX5949A/MAX5949B
LT4250
LT1640.
MS012
k 2645 MOSFET
2645 fet
SMAT70A
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Untitled
Abstract: No abstract text available
Text: 19-2946; Rev 1; 2/06 -48V Hot-Swap Controllers with External RSENSE and High Gate Pulldown Current Features The MAX5921/MAX5939 hot-swap controllers allow a circuit card to be safely hot plugged into a live backplane. The MAX5921/MAX5939 operate from -20V to -80V and
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MAX5921/MAX5939
LT1640
LT4250
MS012
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SMAT70A
Abstract: LT1640 LT4250 MAX5921 MAX5921AESA MAX5939 MAX5921FESA MAX5921FESA T
Text: 19-2946; Rev 1; 2/06 -48V Hot-Swap Controllers with External RSENSE and High Gate Pulldown Current Features The MAX5921/MAX5939 hot-swap controllers allow a circuit card to be safely hot plugged into a live backplane. The MAX5921/MAX5939 operate from -20V to -80V and
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MAX5921/MAX5939
LT1640
LT4250
stable55
MS012
SMAT70A
MAX5921
MAX5921AESA
MAX5939
MAX5921FESA
MAX5921FESA T
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IRF530 mosfet
Abstract: 2n2222 TRANSISTOR 506K SMAT70A
Text: 19-3473; Rev 0; 10/04 -48V Hot-Swap Controllers with External RSENSE Features The MAX5948A/MAX5948B are hot-swap controllers that allow a circuit card to be safely hot plugged into a live backplane. The MAX5948A/MAX5948B operate from -20V to -80V and are well-suited for -48V power
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MAX5948A/MAX5948B
MAX5948A
LT1640AL
LT1640L.
MAX5948B
LT1640AH
LT1640H.
IRF530 mosfet
2n2222 TRANSISTOR
506K
SMAT70A
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Untitled
Abstract: No abstract text available
Text: 19-2931; Rev 0; 8/03 -48V Hot-Swap Controller with External RSENSE Features ♦ Allows Safe Board Insertion and Removal from a Live -48V Backplane The MAX5920A/MAX5920B provide a controlled turn-on to circuit cards preventing glitches on the power-supply rail and damage to board connectors and components.
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MAX5920A/MAX5920B
LT4250
LT1640.
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max5984
Abstract: No abstract text available
Text: 19-3473; Rev 0; 10/04 -48V Hot-Swap Controllers with External RSENSE Features The MAX5948A/MAX5948B are hot-swap controllers that allow a circuit card to be safely hot plugged into a live backplane. The MAX5948A/MAX5948B operate from -20V to -80V and are well-suited for -48V power
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MAX5948A/MAX5948B
MAX5948A
LT1640AL
LT1640L.
MAX5948B
LT1640AH
LT1640H.
max5984
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5007 MRF5007R1 RF Power Field Effect Transistor N-Channel Enhancement-Mode The M R F 5 0 0 7 is d esign ed for broadband com mercial and industrial applications at frequencies to 520 M H z. The high gain and broadband
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OCR Scan
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MRF5007
AN215A,
MRF5Q07R1
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