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    TRANSISTOR MARKING SUS Search Results

    TRANSISTOR MARKING SUS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING SUS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL


    Original     		PDF FJX3904 SC-70 FJX3904TF

    transistor marking 3em

    Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc


    Original     		PDF MMBTH10LT1, MMBTH10-4LT1 r14525 MMBTH10LT1/D transistor marking 3em MMBTH10LT1 mmbth10 MMBTH10-4LT1

    2FK transistor

    Abstract: No abstract text available
    Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


    Original     		PDF MMBT2907AK MMBT2907AK OT-23 2FK transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


    Original     		PDF MMBT3904K MMBT3904K OT-23

    SOT-23 2xk

    Abstract: 2xk transistor npn
    Text: MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO


    Original     		PDF MMBT4401K MMBT4401K OT-23 SOT-23 2xk 2xk transistor npn

    2FK transistor

    Abstract: MMBT2907AK fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor
    Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


    Original     		PDF MMBT2907AK MMBT2907AK OT-23 2FK transistor fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor

    transistor 1AK

    Abstract: 1AK marking transistor MMBT3904K 1ak transistor
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


    Original     		PDF MMBT3904K MMBT3904K OT-23 transistor 1AK 1AK marking transistor 1ak transistor

    2tk transistor

    Abstract: No abstract text available
    Text: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO


    Original     		PDF MMBT4403K MMBT4403K OT-23 2tk transistor

    transistor marking 3em

    Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
    Text: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS


    Original     		PDF MMBTH10LT1, MMBTH10-4LT1 MMBTH10LT1/D transistor marking 3em MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2

    MARKING 1PK

    Abstract: 1PK transistor MMBT2222AK fairchild sot-23 Device Marking pc
    Text: MMBT2222AK NPN Epitaxial Silicon Transistor MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage


    Original     		PDF MMBT2222AK MMBT2222AK OT-23 MARKING 1PK 1PK transistor fairchild sot-23 Device Marking pc

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage


    Original     		PDF MMBT3906K MMBT3906K OT-23

    2AK TRANSISTOR

    Abstract: PNP Epitaxial Silicon Transistor sot-23 MMBT3906K marking 2AK MMBT3906K 2ak
    Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage


    Original     		PDF MMBT3906K MMBT3906K OT-23 2AK TRANSISTOR PNP Epitaxial Silicon Transistor sot-23 marking 2AK MMBT3906K 2ak

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. E B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings


    Original     		PDF MMBT2222AT OT-523F MMBT2222AT

    JESD22a121

    Abstract: marking A02 KTMC1060SC MMBT2222AT JESD22A111
    Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings


    Original     		PDF MMBT2222AT OT-523F MMBT2222AT JESD22a121 marking A02 KTMC1060SC JESD22A111

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A06


    Original     		PDF MMBT3906T OT-523F MMBT3904T MMBT3906T

    marking A06

    Abstract: marking A06 amplifier KTMC1060SC MMBT3904T MMBT3906T transistor j25
    Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • Suitable for general switching & amplification Marking : A06 • Well suited for portable application


    Original     		PDF MMBT3906T OT-523F MMBT3904T MMBT3906T marking A06 marking A06 amplifier KTMC1060SC transistor j25

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904T NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A04


    Original     		PDF MMBT3904T OT-523F MMBT3906T MMBT3904T

    marking A04

    Abstract: KTMC1060SC MMBT3904T MMBT3906T a04 marking
    Text: MMBT3904T NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • Suitable for general switching & amplification Marking : A04 • Well suited for portable application


    Original     		PDF MMBT3904T OT-523F MMBT3906T MMBT3904T marking A04 KTMC1060SC a04 marking

    BULB128D-BT4

    Abstract: transistor bs 140
    Text: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


    Original     		PDF BULB128D-BT4 BULB128DB O-263) BULB128D-BT4 transistor bs 140

    BULB128D

    Abstract: BULB128D-1
    Text: BULB128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-1 BULB128D Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


    Original     		PDF BULB128D-1 BULB128D O-262) BULB128D BULB128D-1

    transistor marking pr 04

    Abstract: BULB128D BULB128D-1
    Text: BULB128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-1 BULB128D Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


    Original     		PDF BULB128D-1 BULB128D O-262) transistor marking pr 04 BULB128D BULB128D-1

    Untitled

    Abstract: No abstract text available
    Text: BCX20 NPN Epitaxial Silicon Transistor BCX20 NPN Epitaxial Silicon Transistor Switching and Amplifier Applications 3 2 1 SOT-23 Marking: U2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


    Original     		PDF BCX20 BCX20 OT-23

    Untitled

    Abstract: No abstract text available
    Text: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol


    Original     		PDF FJX2222A 325mW OT-323

    BULB128D-BT4

    Abstract: No abstract text available
    Text: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


    Original     		PDF BULB128D-BT4 BULB128DB O-263) BULB128D-BT4