N1802
Abstract: STN1802
Text: STN1802 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking STN1802 N1802 VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED SURFACE-MOUNTING SOT-223 MEDIUM
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STN1802
N1802
OT-223
OT-223
N1802
STN1802
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SO918
Abstract: marking N10
Text: SO918 SMALL SIGNAL NPN TRANSISTOR • ■ ■ Type Marking SO 918 N10 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS SMALL SIGNAL VHF AMPLIFICATION AND OSCILLATOR APPLICATIONS 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM
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SO918
OT-23
SO918
marking N10
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 BC847QAPN 45 V, 100 mA NPN/PNP general-purpose transistor 19 July 2013 Product data sheet 1. General description NPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits
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BC847QAPN
DFN1010B-6
OT1216)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.
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BC847QAS
DFN1010B-6
OT1216)
BC857QAS.
BC847QAPN.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 25 July 2014 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847QAS.
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BC857QAS
DFN1010B-6
OT1216)
BC847QAS.
BC847QAPN.
AEC-Q101
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PQMD12
Abstract: No abstract text available
Text: DF N1 10B -6 PQMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ 24 July 2013 Product data sheet 1. General description NPN/PNP double Resistor-Equipped Transistors RET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.
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PQMD12
DFN1010B-6
OT1216)
AEC-Q101
PQMD12
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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PBSS4260QA
DFN1010D-3
OT1215)
PBSS5260QA.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4230QA 30 V, 2 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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PBSS4230QA
DFN1010D-3
OT1215)
PBSS5230QA.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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PBSS5260QA
DFN1010D-3
OT1215)
PBSS4260QA.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5230QA 30 V, 2 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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PBSS5230QA
DFN1010D-3
OT1215)
PBSS4230QA.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4160QA 60 V, 1 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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PBSS4160QA
DFN1010D-3
OT1215)
PBSS5160QA.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5160QA 60 V, 1 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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PBSS5160QA
DFN1010D-3
OT1215)
PBSS4160QA.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4130QA 30 V, 1 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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PBSS4130QA
DFN1010D-3
OT1215)
PBSS5130QA.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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PBSS5130QA
DFN1010D-3
OT1215)
PBSS4130QA.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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NX7002BKXB
DFN1010B-6
OT1216)
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transistor marking N1
Abstract: LNB ka band Germanium power
Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU725F/N1
OT343F
JESD625-A
BFU725F
transistor marking N1
LNB ka band
Germanium power
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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PMDXB600UNE
DFN1010B-6
OT1216)
MOSFET TRANSISTOR SMD MARKING CODE 11
NXP SMD TRANSISTOR MARKING CODE s1
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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PMDXB950UPE
DFN1010B-6
OT1216)
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Untitled
Abstract: No abstract text available
Text: VUI 30-12 N1 Rectifier Module for Three Phase Power Factor Correction Typ. Rectified Mains Power Pn = 15 kW at Vn = 400 V 3~ fT = 15 kHz TC = 80°C Preliminary data Part name Marking on product VUI30-12N1 2 D3 D1 10 9 5 5 1 2 T 6 6 9 10 D2 D4 1 Features:
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VUI30-12N1
20130111b
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BFG505W
Abstract: MLC040
Text: Philips Semiconductors Product specification BFG505W BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG505W NO • High transition frequency BFG505W/X N1 • Gold metallization ensures
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BFG505W
BFG505W/X;
BFG505W/XR
OT343
OT343R
BFG505W/X
BFG505W/XR
BFG505W
711DflZfc.
MLC040
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s0918
Abstract: d7c transistor marking N10
Text: r Z Z SGS-THOMSON ^ 7 # MIDlSB§ ilLieTriBl iD©i S0918 SMALL SIGNAL NPN TRANSISTOR Type Marking S0918 N10 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . SMALL SIGNAL VHF AMPLIFICATION AND
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S0918
OT-23
OT-23
s0918
d7c transistor
marking N10
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JS301
Abstract: transistor 2222a sot 89 Q68000-A8330 2222A PMDC transistor marking code 7C transistor 2222a SXT2222A
Text: SIEMENS NPN Silicon Switching Transistor SXT 2222 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel P in t tonfigu ation 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E
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VPS05162
Q68000-A8330
OT-89
53SbGS
EHP00890
BE35LÃ
JS301
transistor 2222a sot 89
2222A
PMDC
transistor marking code 7C
transistor 2222a
SXT2222A
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors NPN general purpose transistor BC846W; BC847W; BC848W PIN CONFIGURATION FEATURES • S- mini package. n* n1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN Top view DESCRIPTION
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BC846W;
BC847W;
BC848W
OT323
MBC670
BC846AW:
BC846BW:
BC847W:
BC846W
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M65 IC
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE G N1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in TYPE Ri = 2 2 k S l O — VW R1 • Complementary to G A 1F4Z ABSOLUTE M A X IM U M R ATIN G S
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22kSl
1988M
M65 IC
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