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    TRANSISTOR MARKING L GHZ Search Results

    TRANSISTOR MARKING L GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING L GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFP420F

    Abstract: No abstract text available
    Text: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP420F BFP420F

    2SC1223

    Abstract: 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 2SC3604 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and


    Original     		PDF 2SC3604 2SC3604 2SC1223 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149

    TRANSISTOR MARKING YB

    Abstract: BFP420F MARKING 1G TRANSISTOR
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ms = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F 100MHz. EHA07307 May-29-2001 TRANSISTOR MARKING YB BFP420F MARKING 1G TRANSISTOR

    TA 490

    Abstract: SCT-595 490 transistor 09326
    Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4  For high power amplifiers 5  Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz 3  Transition frequency fT > 17 GHz 2  Gold metallization for high reliability 1  SIEGET  25 GHz fT - Line


    Original     		PDF VPW05980 SCT-595 200mA Dec-13-1999 TA 490 SCT-595 490 transistor 09326

    093.266

    Abstract: 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490
    Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4  For high power amplifiers  Compression point P-1dB = 26.5 dBm at 1.8 GHz 5 maxim. available Gain Gma = 8.5 dB at 1.8 GHz  Transition frequency fT > 17 GHz  Gold metallization for high reliability  SIEGET  25 GHz fT - Line


    Original     		PDF VPW05980 SCT-595 200mA Nov-17-2000 093.266 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490

    142001

    Abstract: BFP490 SCT595 SCT-595
    Text: SIEGET 25 BFP490 NPN Silicon RF Transistor 4  For high power amplifiers 5  Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 8.5 dB at 1.8 GHz 3  Transition frequency fT > 17 GHz 2  Gold metallization for high reliability 1  SIEGET  25 GHz fT - Line


    Original     		PDF BFP490 VPW05980 SCT595 200mA Aug-14-2001 142001 BFP490 SCT595 SCT-595

    PC3223TB

    Abstract: marking c3j C1f TRANSISTOR marking c1d PC3223TB-E3 PC2708TB PC2709TB UPC3223TB PC3223TB-E3-A PC2710TB
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.


    Original     		PDF UPC3223TB PC3223TB HS350 WS260 IR260 PU10491EJ01V0DS marking c3j C1f TRANSISTOR marking c1d PC3223TB-E3 PC2708TB PC2709TB UPC3223TB PC3223TB-E3-A PC2710TB

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MMBR901L Silicon NPN RF Transistor DESCRIPTION • Low Noise • High Power Gain- SOT- 2 3 package G p e = 1 2 . 0 d B T Y P . @ f = 1 GHz &" ^^


    Original     		PDF MMBR901L

    pin diagram of bf 494 transistor

    Abstract: TA 8825 AN SOT-595 TA 8825 SCT-595 RF POWER marking 556 PIN CONFIGURATION IC ne 555 BF 949 transistor 09326 TRANSISTOR BO 346
    Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data 4 • For high power amplifiers 5 • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz 3 2 • Gold metalization for high reliability


    Original     		PDF VPW05980 Q62702-F1721 SCT-595 Sep-09-1998 pin diagram of bf 494 transistor TA 8825 AN SOT-595 TA 8825 SCT-595 RF POWER marking 556 PIN CONFIGURATION IC ne 555 BF 949 transistor 09326 TRANSISTOR BO 346

    MARKING C3F

    Abstract: PC8182TB PC8181TB F MARKING 6PIN transistor marking wt
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.


    Original     		PDF PC8182TB PC8182TB HS350 WS260 VP215 IR260 PU10206EJ01V0DS MARKING C3F PC8181TB F MARKING 6PIN transistor marking wt

    MARKING ra

    Abstract: LT 612 1054 transistor DAG marking dag transistor MAR 819 ci 7436 7334 marking MAR 601 transistor
    Text: Temic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • L ow n o ise figure • Low cross modulation Marking: RA Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter


    OCR Scan     		PDF BFQ81 21-Mar-97 MARKING ra LT 612 1054 transistor DAG marking dag transistor MAR 819 ci 7436 7334 marking MAR 601 transistor

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ö23b320 O G l b U l S « S I P NPN Silicon RF Transistor -p_ ^ | « ^ 3 .S IE M E N S / SPCLi SEMICONDS _ 64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. TVpe Marking


    OCR Scan     		PDF 23b320 BFQ64 -F106T OT-89 A23b35Q

    Transistor BFT 96

    Abstract: bft96 transistor 3884 transistor BC 176 Telefunken u 237 transistor fet 3884
    Text: TELEFUNKEN ELECTRONIC Ô1C P • fi^SQD^b Q00532Q T r-*/~ BFT 96 iniDJllFWIKEM electronic Creative Technologies Silicon PNP Planar BF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier Features: • High power gain


    OCR Scan     		PDF q0q532q 0484E1 ft-11 569-GS 000s154 hal66 if-11 Transistor BFT 96 bft96 transistor 3884 transistor BC 176 Telefunken u 237 transistor fet 3884

    transistor BFT 95

    Abstract: transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor
    Text: TELEFUNKEN ELECTRONIC SIC D ▼ • 812001b 000531!, 8 «ALG S T~3/-'~ m iBraaBSIEI» electronic BPr qB B FT 95 i Creative Technologies Silicon PNP Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier !


    OCR Scan     		PDF 000531b ft-11 569-GS 000s154 hal66 if-11 transistor BFT 95 transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor

    TRANSISTOR SMD MARKING CODE a9

    Abstract: TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE MARKING CODE SMD IC transistor smd marking LE MARKING CODE V6 SMD TRANSISTOR MARKING code TJ smd transistor m90 MARKING SMD IC CODE V6 marking code
    Text: Philips Components BFG33 BFG33X NPN 12 GHz WIDEBAND TRANSISTOR BFG33 is an npn transistor in a m icrom iniature SOT143 envelope w ith double em itter bonding. The device contains a BFQ33 crystal and is fo r use in circuits using SMD technology. Features • Extremely high transition frequency


    OCR Scan     		PDF BFG33 BFG33X BFG33 OT143 BFQ33 is2212) 7Z89163-1 BFG33X TRANSISTOR SMD MARKING CODE a9 TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE MARKING CODE SMD IC transistor smd marking LE MARKING CODE V6 SMD TRANSISTOR MARKING code TJ smd transistor m90 MARKING SMD IC CODE V6 marking code

    Untitled

    Abstract: No abstract text available
    Text: i_L N AUER PHILIPS/BISCRETE DbE D • bbS3T31 QOlSlb? 1 RV2833B5X r - 3 3 - D MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.


    OCR Scan     		PDF bbS3T31 RV2833B5X 53T31 0D1S17D

    Semiconductor 1346 transistor

    Abstract: DIODE bfp 86 marking 53 Sot-343
    Text: SIEMENS SI EG ET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1591 OT-343 Semiconductor 1346 transistor DIODE bfp 86 marking 53 Sot-343

    Marking ANs

    Abstract: Transistor C 5198 b 514 transistor BFP450
    Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1590 OT-343 Marking ANs Transistor C 5198 b 514 transistor BFP450

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D LbSBTBl 0015037 T • _ JL MAINTENANCE TYPE MKB12040WS T - 3 3 - II NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz.


    OCR Scan     		PDF MKB12040WS

    093.266

    Abstract: pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502
    Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Prelim inary data • For high power amplifiers • Compression point P_1dB = 26.5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency ^ > 1 7 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1721 SCT-595 200mA 093.266 pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DbE D • bbS3T31 0015115 4 ■ PTB42003X T - 33 - 0 7 MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.


    OCR Scan     		PDF bbS3T31 PTB42003X

    Untitled

    Abstract: No abstract text available
    Text: 1 N AMER PHILIPS/DISCRETE ObE D • ^53=131 0D1SDS1 >4 ■ MRB11175Y T - 3 3 - *T PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,


    OCR Scan     		PDF MRB11175Y bb53T31 Q01S05M 7Z210t3

    transistor bf 422 NPN

    Abstract: BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103
    Text: Product specification Philips Semiconductors NPN 9 GHz wideband transistor BFR521 FEATURES DESCRIPTION • High power gain Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT1Q3 package. • Low noise figure • High transition frequency


    OCR Scan     		PDF BFR521 OT103 MSB037 OT103. 7110A2b transistor bf 422 NPN BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103

    BFT92

    Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures


    OCR Scan     		PDF BFT92W OT323 BFT92W BFT92. OT323. 711002b BFT92 "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM marking L2 SOT23 6