transistor marking c4
Abstract: UTCMMBT1815
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 2 3 MARKING SOT-523 C4
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MMBT1815
150mA
MMBT1015
OT-523
QW-R221-009
transistor marking c4
UTCMMBT1815
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MMBT1015
Abstract: MMBT1815
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4
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MMBT1815
150mA
MMBT1015
OT-113
QW-R210-004
MMBT1015
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4
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MMBT1815
150mA
MMBT1015
OT-113
QW-R210-004
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TRANSISTOR b100
Abstract: No abstract text available
Text: UTCMMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR
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UTCMMBT1815
150mA
MBT1015
OT-23
QW-R206-014
TRANSISTOR b100
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR
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MMBT1815
150mA
MBT1015
OT-23
QW-R206-014
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR
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MMBT1815
150mA
MBT1015
OT-23
QW-R206-014
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mbt1015
Abstract: MMBT1815
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR
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MMBT1815
150mA
MBT1015
OT-23
QW-R206-014
mbt1015
MMBT1815
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4066 spice model
Abstract: SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900
Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ
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MBC13900/D
MBC13900
OT-343)
MBC13900T1
OT-343
MBC13900
SC-70
4066 spice model
SOT343 lna
Spice Parameter, Bipolar Transistor
8948
transistor npn d 2078
marking 900
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318M
Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ
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MBC13900/D
MBC13900
OT-343)
MBC13900T1
OT-343
MBC13900
SC-70
318M
LL1608-FH
MBC13900T1
marking r4 SOT343
SOT343 lna
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4066 spice model
Abstract: LL1608-FH MBC13900 MBC13900T1
Text: Freescale Semiconductor, Inc. Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package
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MBC13900/D
MBC13900
OT-343)
MBC13900T1
OT-343
MBC13900
SC-70
4066 spice model
LL1608-FH
MBC13900T1
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Untitled
Abstract: No abstract text available
Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking
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BFR949T
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Untitled
Abstract: No abstract text available
Text: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFR949T
VPS05996
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BFR949T
Abstract: MA457 MARKING C6 BFR94
Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking
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BFR949T
BFR949T
MA457
MARKING C6
BFR94
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BFR94
Abstract: No abstract text available
Text: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFR949T
VPS05996
BFR94
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DIN 3021-3 STANDARD
Abstract: DIN 3021-3 tuning fork application note DIN 43650 form c PIEZO DISK 25 MM 30213-EN-070201 namur NE 93 TIP 34 pnp
Text: Operating Instructions VEGASWING 51 - transistor PNP Contents Contents 1 About this document 1.1 1.2 1.3 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 5 5 6
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30213-EN-070201
DIN 3021-3 STANDARD
DIN 3021-3
tuning fork application note
DIN 43650 form c
PIEZO DISK 25 MM
30213-EN-070201
namur NE 93
TIP 34 pnp
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em 234 stepper
Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
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O01ED0
H1-O01ED0-0106030ND
em 234 stepper
2SC5586 equivalent
8002 1018 AUDIO amplifier
2SC5586
2SC5487
voltage doubler bridge
varistor 560-2
2sa2003
se125n
SE090
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2SC5586 equivalent
Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements
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TM1641S-L
TM1661B-L
TM1661P-L
TM1661S-L
TM2541B-L
TM2561B-L
TM341M-L
TM341S-L
TM341S-R
TM361M-L
2SC5586 equivalent
2sc5586
2sa1694 equivalent
2SC5487
transistor 2SC5586
STR83159
em 234 stepper
SE090
SK 5154S
2SK3460 equivalent
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2SC1412
Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
Text: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type
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2SA1037AK
SC-88A
-50/iA
-50pA
--12V,
AC221
2SC1412
VE00
L1102
FMS2A
"dual TRANSISTORs"
transitron
2SC1412K
ums2n
2SC241ZK
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2SC1412K
Abstract: UMW8 2sc1412 2SC241 baw 92 FMY3 2SC2412AK 2SC141 2SC241ZK
Text: @Features 1’ Two 2SA1037AK in UMT and SMT packages. 2‘ Mounting possible with UMT3 or SMT3 automatic mounting machines. l External dimensions Units: mm UMTl N 2OkO2 IMTl A 13t01 09kOl 065 (3 3‘ Transistor elements are independent, eliminating interference.
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2SA1037AK
13t01
09kOl
SC-88
SC-74
1T106
Cl021
2SC1412K
2SA1037AK
UMW8
2sc1412
2SC241
baw 92
FMY3
2SC2412AK
2SC141
2SC241ZK
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c4g TRANSISTOR sot323
Abstract: c4g TRANSISTOR transistor C4G sot-23 transistor C4G free transistor sot723 113 sot TRANSISTOR NPN c4 nf SOT23 MARKING 723CL
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR * * * * FEATURES Collector-Emitter Voltage: BVCEO=50V Collector Current up to 150mA High hFE Linearity Complement to MMBT1015 ORDERING INFORMATION
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MMBT1815
150mA
MMBT1015
MMBT1815L-x-AC3-R
MMBT1815G-x-AC3-R
MMBT1815L-x-AE3-R
MMBT1815G-x-AE3-R
MMBT1815L-x-AL3-R
MMBT1815G-x-AL3-R
MMBT1815L-x-AN3-R
c4g TRANSISTOR sot323
c4g TRANSISTOR
transistor C4G sot-23
transistor C4G
free transistor
sot723
113 sot
TRANSISTOR NPN c4 nf
SOT23 MARKING
723CL
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C4 Package
Abstract: transistor b 647 c
Text: UMC4N FMC4A Transistor, digital, dual, PNP and NPN, with 2 resistors Features Dimensions Units : mm available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages UMC4N (UMT5) package marking: UMC4N and FMC4A; C4 package contains an NPN (DTC144EKA) and a PNP (DTA114YKA) digital transistor, each
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SC-74A)
DTC144EKA)
DTA114YKA)
SC-70)
SC-59)
C4 Package
transistor b 647 c
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Untitled
Abstract: No abstract text available
Text: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available In SMT3 (SMT, SC-59) package • package marking: 2SB1197K; AH-*, where ★ is hFE code • 2SB1197K (SMT3) 1.9±0.2 low collector saturation voltage 0.96 a (2 )[ 2.4 V CE(sat) - “ ° - 5 v f o r
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2SB1197K
SC-59)
2SB1197K;
A/-50
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C3906K
Abstract: C4102
Text: 2SA1579 / 2SA1514K 2SC4102 / 2SC3906K Transistors I High-voltage Amplifier Transistor —120V, —50mA 2SA1579 / 2SA1514K + 0 A bsolute m axim um ratings ( 7 8 = 2 5 * 0 ) F e a tu r e s 1 ) High breakdown voltage. ( V c e o = — 120V) 2 ) C om plem ents the 2S C4102/2S C3906K.
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2SA1579
2SA1514K
2SC4102
2SC3906K
--120V,
--50mA)
2SA1514K
C4102/2S
C3906K
C4102
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921TS
Abstract: transistor BF 235 DIN41869 marking code C4 Sot 23-5 S920T
Text: TELEFUNKEN ELECTRONIC 17E I • a^SOG^b OOO^blR 5 BIALGG S 920 TS • S 922 TS ÜK1 e le c tro n ic Cre^tfwTechrtoJog*j Silicon NPN Epitaxial Planar RF Transistors ^ ^ Applications: For telephone sets, telecommunication circuits, hybrid circuits, video driver and power
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15A3DIN
921TS
transistor BF 235
DIN41869
marking code C4 Sot 23-5
S920T
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