TRANSISTOR MAKING Search Results

TRANSISTOR MAKING Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR MAKING Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
LIMITING INRUSH CURRENT npn Abstract: No abstract text available Text: LP395 LP395 Ultra Reliable Power Transistor Literature Number: SNOSBF3B LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from	Original	PDF	LP395 LP395 LIMITING INRUSH CURRENT npn
pnp germanium transistor Abstract: germanium transistors PNP Germanium Transistors Text: 520C Specifications Model 520C Industrial Transistor Tester IN-CIRCUIT TEST The B+K Precision model 520C Transistor Tester is designed for in-circuit and out-of circuit transistor testing with special features for making additional tests on devices out-of circuit.	Original	PDF
LM295 Abstract: LM195 LP395 LP395Z Z03A LIMITING INRUSH CURRENT npn Text: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from almost	Original	PDF	LP395 LP395 LM295 LM195 LP395Z Z03A LIMITING INRUSH CURRENT npn
LIMITING INRUSH CURRENT npn Abstract: LP395 LP395Z LM195 Z03A NPN center base transistors Text: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from	Original	PDF	LP395 LP395 CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. LIMITING INRUSH CURRENT npn LP395Z LM195 Z03A NPN center base transistors
LIMITING INRUSH CURRENT npn Abstract: No abstract text available Text: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from	Original	PDF	LP395 LIMITING INRUSH CURRENT npn
24 TRANSISTOR MAKING Abstract: LM195 LM295 C1995 LM395 LP395 LP395Z Z03A Ice-100 Text: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection This very high gain transistor has included on the chip current limiting power limiting and thermal overload protection making it difficult to destroy from	Original	PDF	LP395 24 TRANSISTOR MAKING LM195 LM295 C1995 LM395 LP395Z Z03A Ice-100
LM195 Abstract: LP395 LP395Z Z03A transistor lp395z Text: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from	Original	PDF	LP395 LP395 CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. LM195 LP395Z Z03A transistor lp395z
on 222 transistor Abstract: 4503 ISAHAYA Diagrams Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN226AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN226AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=0.22kΩ,R2=2.2kΩ）	Original	PDF	RTGN226AP RTGN226AP on 222 transistor 4503 ISAHAYA Diagrams
Japanese Transistor Abstract: RTGN141AP RTGN141 rtgn14 Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN141AP PRELIMINARY TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN141AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=10kΩ,R2=10kΩ）	Original	PDF	RTGN141AP RTGN141AP Japanese Transistor RTGN141 rtgn14
Japanese Transistor Abstract: R1047K 0.47k resistor rtgn426 Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN426AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN426AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=0.47kΩ,R2=4.7kΩ）	Original	PDF	RTGN426AP RTGN426AP Japanese Transistor R1047K 0.47k resistor rtgn426
RTGN234AP Abstract: rtgn234 Japanese Transistor isahaya transistor electronics Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN234AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN234AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=2.2kΩ,R2=10kΩ）	Original	PDF	RTGN234AP RTGN234AP rtgn234 Japanese Transistor isahaya transistor electronics
PT 4304 a transistor Abstract: 2SC3587 noise diode Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise	Original	PDF	2SC3587 2SC3587 PT 4304 a transistor noise diode
AN3025 Abstract: transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free Text: Application Note AN3025 Transistor Mounting and Soldering Rev. 3 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. Solder pre-tin the transistor leads Mount the transistor Solder the transistor leads to the circuit trace	Original	PDF	AN3025 AN3025 transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free
RTGN14BAP Abstract: 4503 swithing rtgn14 Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN14BAP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN14BAP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R2=10kΩ） ● High collector current IC=1A	Original	PDF	RTGN14BAP RTGN14BAP 4503 swithing rtgn14

RTGN131AP Abstract: 4503 rtgn131 Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN131AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN131AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=1kΩ,R2=1kΩ） ● High collector current IC=1A	Original	PDF	RTGN131AP RTGN131AP 4503 rtgn131
germanium transistors PNP Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,	Original	PDF	IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
LM195 Abstract: LP395 LP395Z Z03A Text: General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from	Original	PDF	LP395 LP395 LP395Z LM195 LP395Z Z03A
DIP18 Abstract: LB1741 mm 105k BUT 11 Transistor Text: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.	Original	PDF	ENN4094 LB1741 LB1741 500mA 18-pin 3007B-DIP18 LB1741] 51min DIP18 mm 105k BUT 11 Transistor
transistor A 564 Abstract: S-AV8 2-13B1A 564 transistor S-AU4 Text: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the	OCR Scan	PDF	TcS90 transistor A 564 S-AV8 2-13B1A 564 transistor S-AU4
2SC3603 Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise	OCR Scan	PDF	2SC3603 2SC3603
NEC K 2500 Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150 Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise	OCR Scan	PDF	2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
transistor NEC D 586 Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500 Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise	OCR Scan	PDF	2SC3587 2SC3587 transistor NEC D 586 nec a 634 NEC D 586 NEC K 2500 NEC 3500
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	PDF	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
MP-25 Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.	OCR Scan	PDF	NP40N06CLC NP40N06DLC NP40N06ELC 175dgree 027QMAX. 1000pF O-220AB O-262AA O-220SMD MP-25 NP40N06ELC TO-220SMD

TRANSISTOR MAKING Search Results

TRANSISTOR MAKING Result Highlights (5)

TRANSISTOR MAKING Datasheets Context Search

LIMITING INRUSH CURRENT npn

pnp germanium transistor

LM295

LIMITING INRUSH CURRENT npn

LIMITING INRUSH CURRENT npn

24 TRANSISTOR MAKING

LM195

on 222 transistor

Japanese Transistor

Japanese Transistor

RTGN234AP

PT 4304 a transistor

AN3025

RTGN14BAP

RTGN131AP

germanium transistors PNP

LM195

DIP18

transistor A 564

2SC3603

NEC K 2500

transistor NEC D 586

la 4440 amplifier circuit diagram 300 watt

MP-25