MRF327
Abstract: 80WF
Text: MRF327 o I NPN SILICON RF POWER TRANSISTOR . designed primarily stages in the 100-500 o Guaranteed Performance Output Built-in wideband @ 400 MHz, Match with 30:1 Network Metal lization for System for 100–500 Collector-Emitter Voltag~J~I.? Emitter-Base
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MRF327
AR120NA
MRF327
80WF
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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BLX92A
Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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BLX92A
BLX92A
BLX92
em 179
sfe 5,5 ma
IEC134
transistor IR 944
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Transistor BFw 92
Abstract: TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor
Text: BFW 92 "W Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: Hochfrequenzverstärker bis in den GHz-Bereich Applications: RF-amplifier up to G Hz range Besondere Merkmale: Features: • Hohe Leistungsverstärkung • High pow er gain
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596/0776A1
470pF
20x8x0
Transistor BFw 92
TRANSISTOR BFW 11
BFW92
bfw glass
bfw 10 transistor
BFw 92
NPN planar RF transistor
bfw 11
bfw 30 transistor
BFW 42 transistor
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1671B
Abstract: 2N1671 scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C
Text: Germanium Power Devices Corp. SILICON UNIJUNCTION TRANSISTOR The| GPJ3 Unijunction Transistor is a three terminal device having a stable “N ” type negative resistance charac teristic over a wide temperature range. A stable peak point voltage, a low peak point
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2N1671
2N1671-2N1671A)
2N1671B)
314737S
1671B
scr firing
2N1671A
160 germanium transistor
2N 1671
1671C
Germanium power
2N1671B
MT53B256M32D1NP-062 AUT:C
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philips blx15
Abstract: BLX15 Philips Application BLX15 TRANSISTOR blx15 Blx15 philips 4312 020 36640 blx15 push pull PHILIPS 4312 amplifier carbon resistor CIL TRANSISTOR 188
Text: PHI L IP S INTERNATIONAL bSE D m 7110fl2ki ODb3471 R74 BLX15 PHIN _ _ _ _ _ _ _ _ _ A_ _ _ _ _ _ _ H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:
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7110fl2ti
ODb3471
BLX15
philips blx15
BLX15
Philips Application BLX15
TRANSISTOR blx15
Blx15 philips
4312 020 36640
blx15 push pull
PHILIPS 4312 amplifier
carbon resistor
CIL TRANSISTOR 188
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Untitled
Abstract: No abstract text available
Text: E HIGH-SPEED TRANSISTOR OPTOCOUPLERS U OPTOELECTRONICS i - HCPL-2503 HCPL-4502 6N136 6N135 DESCRIPTION PACKAGE DIMENSIONS The HCPL-4502/HGPL-2503 and 6N136/5 optocouplers contain a 700 nm GaAsP LED emitter, which is optically coupled to a high speed photodetector transistor.
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HCPL-2503
HCPL-4502
6N136
6N135
HCPL-4502/HGPL-2503
6N136/5
C1946
74bbflSl
C2D00
DQ0b03fl
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pulse transformer 4502
Abstract: c1946 hcpl 4502 4502
Text: HIGH-SPEED TRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES HCPL-2503 HCPL-4502 6N136 6N135 PACKAGE DIMENSIONS ft DESCRIPTION The HCPL-4502/HCPL-2503 and 6N136/5 optocouplers contain a 700 nm GaAsP LED emitter, which is optically coupled to a high speed photodetector transistor.
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HCPL-2503
HCPL-4502
6N136
6N135
HCPL-4502/HCPL-2503
6N136/5
C1997
pulse transformer 4502
c1946
hcpl 4502
4502
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2SK875
Abstract: 2SK875A
Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK875 The 2SK875 is N-channel MOS Field E ffe ct Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies DC-DC converters. FEATURES • in m illim e te rs inches
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2SK875
2SK875
1987M
2SK875A
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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TFK 351
Abstract: BFY88 BFY 88 tfk 352 tfk 349 BFY 20 Mischstufen BFY 36 transistor Scans-0010448 BFy 90 transistor
Text: /A \ BFY 880 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: UHF-Verstärker-, Vorstufen in Em itterschaltung S elbstschw ingende M ischstufen in Basisschaltung Applications: UHF a m plifier stages, pre stages in com m on e m itter configuration
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200MHz
TFK 351
BFY88
BFY 88
tfk 352
tfk 349
BFY 20
Mischstufen
BFY 36 transistor
Scans-0010448
BFy 90 transistor
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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BLX67
Abstract: mrtil transistor 3568
Text: N AMER PHILIPS/DISCRETE 8 6D ObE 01766 I D 7 -" ~ j • 1^53^31 G014DDM 3 - o Jr ~ BLX67 A U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V,
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G014DDM
BLX67
T-33-Ã
BLX67
mrtil
transistor 3568
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Untitled
Abstract: No abstract text available
Text: CA3086 Semiconductor General Purpose NPN Transistor Array November 1996 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz T he C A 3 08 6 con sists of five g e n e ra l-p u rp o se silicon NPN
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CA3086
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J 3305
Abstract: BLX67 transistor J 3305 transistor TE 901 transistor 3305 th258 R5305 transistor c 1974
Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D m 711GÔEb 00277^1 2 E1PHIN BLX67 - r - 3 3 - 0 5 “ • U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,8 V.
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BLX67
-r-53-05"
27ATIONAL
T-33-05
7Z68919
7Z6992)
J 3305
BLX67
transistor J 3305
transistor TE 901
transistor 3305
th258
R5305
transistor c 1974
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ^ SSE D 53=131 0 0 2 0 4 3 0 4 BUK452-50A BUK452-50B PowerMOS transistor T-37-IJ GENERAL DESCRIPTION SYMBOL > « O N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK452-50A
BUK452-50B
T-37-IJ
BUK452
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transistor itt 975
Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz
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BLX15
transistor itt 975
BLX15
philips blx15
BY206
blx15 push pull
hie bd135
PHILIPS 4312 amplifier
Philips Application BLX15
TRANSISTOR blx15
4312 020 36640
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micrologic
Abstract: gating a signal using NAND gates fairchild micrologic IC953 slave and master inverter circuit diagrams Inverter Gates CA2TC CTVL952 pin configuration of logic gates logic gates circuit diagram
Text: • M ARCH 1965 CT mL952 THROUGH CTgL957 9 TRANSISTOR COMPLEMENTARY TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS MICROLOGIC® G E N E R A L D E S C R IP T IO N - The Fairchild CT/aL Fam ily was designed for very high-speed, low -cost com m ercial system s applications.
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CTmL952
CTML957
CTfiL-953
CTia-957
iC953
iL-957
micrologic
gating a signal using NAND gates
fairchild micrologic
IC953
slave and master inverter circuit diagrams
Inverter Gates
CA2TC
CTVL952
pin configuration of logic gates
logic gates circuit diagram
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PL 431 transistor
Abstract: BLX65 FX1115 transistor w 431 y 431 transistor transistor 1002 IEC134 0-22 p trimmer h a 431 transistor transistor H-R
Text: PHILIPS INTERNATIONAL 711DÖSb 0Db3SPD 5 TB I IPHIN t>5E D BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO -39 metal envelope with the collector connected to the
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711002b
BLX65
O-39/1;
PL 431 transistor
BLX65
FX1115
transistor w 431
y 431 transistor
transistor 1002
IEC134
0-22 p trimmer
h a 431 transistor
transistor H-R
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MJE370
Abstract: MJE520 MOTOROLA
Text: MOTOROLA SC X S T R S /R 1SE D I F b3b?254 Ciaa53H7 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER PNP SILICON TRANSISTOR 3 AMPERE POWER TRANSISTOR PNP SILICON . . . designed for use in general-purpose amplifiers and switching circuits. Recommended for use in 5 to 10 W att audio amplifiers uti
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Ciaa53H7
MJE520
MJE370
MJE520 MOTOROLA
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OUT40
Abstract: No abstract text available
Text: 0 182998 .AGRIAN. INC T? infini02e]TA 0001433 a i l kCRIAN G EN ER A L 2304 D E S C R IP TIO N 4.0 WATTS - 20 VOLTS 2300 MHz The 2304 is a common base transistor capable of providing 4 watts of CW RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed
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0DG1433
cc-20
OUT40
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JE370
Abstract: LT 7706 MJE520 Je52 MJE520 MOTOROLA
Text: MOTOROLA SC 15E 0 I fc,3b?25M ÜOflS331 4 | XSTRS/R F T -3* 3 -ö f MOTOROLA SEMICONDUCTOR MJE520 TECHNICAL DATA 3 AMPERE PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 30 V O L T S 25 W A T T S . . .'designed for use in general-purpose amplifier and switching
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OflS331
MJE520
JE370
JE370
LT 7706
MJE520
Je52
MJE520 MOTOROLA
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2SK785
Abstract: No abstract text available
Text: 64 27 52 5 N E C ELEC TR ON IC S INC 98D 18931 D T " J f - 3 w üg¡ N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR IB DESCRIPTION FEA TU RES B E | t 4 E7 S a S D D 1S131 3 2SK785 | The 2SK785 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters.
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642752S
2SK785
2SK785
T-39-13
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