TRANSISTOR L 701 Search Results

TRANSISTOR L 701 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR L 701 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CSA1012 Abstract: CSC2562 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSA1012 CSC2562 CSA1012, CSC2562 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR	Original	PDF	O-220 CSA1012 CSC2562 CSA1012, C-120 CSA1012 CSC2562
on 614 power transistor Abstract: transistor D 288 transistor 614 transistor 9002 CSA614 CSD288 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR	Original	PDF	O-220 CSA614 CSD288 CSA614, C-120 on 614 power transistor transistor D 288 transistor 614 transistor 9002 CSA614 CSD288
2SK2312 Abstract: No abstract text available Text: 2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) l High forward transfer admittance	Original	PDF	2SK2312 2SK2312
on 614 power transistor Abstract: No abstract text available Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator	Original	PDF	O-220 CSA614 CSD288 CSA614, C-120 on 614 power transistor
2SK2376 Abstract: No abstract text available Text: 2SK2376 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSV 2SK2376 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) l High forward transfer admittance	Original	PDF	2SK2376 2SK2376
2SK2985 Abstract: No abstract text available Text: 2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2985 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) l High forward transfer admittance : \|Yfs\| = 70 S (typ.)	Original	PDF	2SK2985 2SK2985
P3055L Abstract: P3055 Text: Philips S em iconductors Product specification P o w e rM O S transistor PHP3055L L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level field-effect power transistor in a	OCR Scan	PDF	PHP3055L P3055L P3055
CSA1012 Abstract: No abstract text available Text: CSA1012, CSC2562 L CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications OlM A B C D e F G H J K L _ * M N MSN MAX 16.51 10.67 4.83 _ 0.90 1,15 ! ,40 3,75 3.88 2,29 2.79 2,54 3.43 0,56 12,70 14,73 _ 6.35	OCR Scan	PDF	CSA1012, CSC2562 CSA1012 CSC2562
ZO 107 MA Abstract: 341S Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low	OCR Scan	PDF	2SC5009 2SC5009 ZO 107 MA 341S
TRANSISTOR 2SC 2581 Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733 Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS	OCR Scan	PDF	2SC5009 2SC5009 TRANSISTOR 2SC 2581 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
IN7100 Abstract: No abstract text available Text: Philips Semiconductors Product specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and	OCR Scan	PDF	PHP5N20E IN7100
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and	OCR Scan	PDF	PHP26N10E
TI SVG Abstract: No abstract text available Text: Philips Semiconductors Product specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and	OCR Scan	PDF	PHP8N20E TI SVG
IC test Abstract: No abstract text available Text: KTC2022D/L SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURE • Low Collector-Emitter Saturation Voltage : V cE sat -2.0V (M ax.) • Complementary to KTA1042D/L. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING	OCR Scan	PDF	KTC2022D/L KTA1042D/L. IC test

Untitled Abstract: No abstract text available Text: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.	OCR Scan	PDF	bhS3T31 0031b53 BFQ68 OT122A
transistor D 288 Abstract: No abstract text available Text: CDU CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator PIN CONFIGURATION 1 . BASE 2 COLLECTOR 3. EMITTER 4. COLLECTOR DIM •A o^=» 3 - A 8 C D £ F G H J K L M N MIN MAX	OCR Scan	PDF	CSA614 CSD288 CSA614, transistor D 288
CSA1012 Abstract: CSC2562 Text: CSA1012, CSC2562 CSA1012 CSC2562 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR High Current Switching Applications •E oa ai DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1,40 3,75 3.88 2,29 2.79 2.54 3.43 0,56 12.70 14,73 6,35	OCR Scan	PDF	CSA1012, CSC2562 CSA1012 CSC2562 DD011EE
transistor D 288 Abstract: transistor 614 CSA614 CSD288 Text: CSA614, CSD288 CSA614 CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.88 3.75 2,29 2.79 2.54 3.43 0,56 12,70 14.73 6.35	OCR Scan	PDF	CSA614, CSD288 CSA614 CSD288 23B33T4 0DQ1114 transistor D 288 transistor 614
3N160 Abstract: No abstract text available Text: TYPE 3N160 P-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD EFFECT TRANSISTOR B U L L E T IN I NO . D L -S 7011149, M A R C H 1970 E N H A N C E M E N T -T Y P E t M O S S IL IC O N T R A N S IS T O R I For Applications Requiring Very High Input Impedance, Such as	OCR Scan	PDF	3N160 3N161
2SC3378 Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184 Text: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current	OCR Scan	PDF	2SC2458 2SA1048 2SC24S8 2SC2469 2SA1049 2SC2710 2SA1150 2SK367 2SK370 2SC3378 fet 2sK161 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
CSA1012 Abstract: CSC2562 ic 356 transistor CSA1012 Text: CSA1012, CSC2562 CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications i— i * r: * .4 IP U = ,C . e , •il t * j DJ g 1 tl DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1.40 3,75	OCR Scan	PDF	CSA1012, CSC2562 CSA1012 CSC2562 ic 356 transistor CSA1012
transistor 614 Abstract: transistor D 288 CSA614 33T4 CSD288 transistor 388 max8080 D 1651 transistor Text: IL CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0 .9 0 1.15 1,40 3,75 3.88 2,29 2.79 2,54 3.43 0 ,56 12.70 14.73	OCR Scan	PDF	CSA614, CSD288 CSA614 CSD288 00D1114 transistor 614 transistor D 288 33T4 transistor 388 max8080 D 1651 transistor
Untitled Abstract: No abstract text available Text: \| e FORWARD INTERNATIONAL ELECTRONICS L ID . 2SC1674 SEMICONDUCTOR NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA TV PIE A M P L IF IE R S TUNER RF AMPLEFIER,MIXER,OSCILLATOR * High Current Gain-Bandwidth Product fT=600MHz Typ * High Power Gain Gpe=22d B at f=100MHz	OCR Scan	PDF	2SC1674 600MHz 100MHz
Untitled Abstract: No abstract text available Text: \| e FORWARD INTERNATIONAL ELECTRONICS L ID . 2SC1008 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR L O W F R E Q U E N C Y A M P L IF IE R M E D IU M S P E E D S W IT C H IN G * * * * Package: TO-92 Complement to 2SA708 High Collector-Base Voltage VCBO=80V	OCR Scan	PDF	2SC1008 2SA708 700mA 800mW 100uA 500mA

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TRANSISTOR L 701 Search Results

TRANSISTOR L 701 Result Highlights (5)

TRANSISTOR L 701 Datasheets Context Search

CSA1012

on 614 power transistor

2SK2312

on 614 power transistor

2SK2376

2SK2985

P3055L

CSA1012

ZO 107 MA

TRANSISTOR 2SC 2581

IN7100

Untitled

TI SVG

IC test

Untitled

transistor D 288

CSA1012

transistor D 288

3N160

2SC3378

CSA1012

transistor 614

Untitled

Untitled