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    TRANSISTOR K30 Search Results

    TRANSISTOR K30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K1150PG

    Abstract: K1150Pg Opto Coupler opto coupler 4n35 datasheet Opto Coupler 4N33 darlington opto coupler opto coupler 4n35 purpose of opto coupler 4n35 4 channel triac opto x1 transistor K1150P
    Text: Vishay Semiconductors Classification Chart for Opto Couplers General purpose 4N27/28 CTR>10% Standard 4N25/26 CTR>20% Transistor output 4N35–37 CTR>100% 6 Pin-Series Base n.c. TCDT1110 Transistor output CTR>50% High CTR 4N32/33 Darlington output CTR>500%


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    PDF 4N27/28 4N25/26 TCDT1110 4N32/33 CNY74 MCT6H/62H K827PH K825P K824P K845P K1150PG K1150Pg Opto Coupler opto coupler 4n35 datasheet Opto Coupler 4N33 darlington opto coupler opto coupler 4n35 purpose of opto coupler 4n35 4 channel triac opto x1 transistor K1150P

    sf 128 transistor

    Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
    Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.


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    PDF SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47

    k301 transistor

    Abstract: K304 K301 K302 transistor SMD mark
    Text: Photocoupler K301 • K302 • K304 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor per a channel. The K301 has one channel in a 4-pin mini-flat SMD package. The K302 has two channels in a 8-pin mini-flat SMD package.


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    PDF 16-pin AC3750Vrms k301 transistor K304 K301 K302 transistor SMD mark

    optocoupler P 521

    Abstract: EN60747-5-5 521 optocoupler K3012P-X007T 521 phototriac coupler K3010P K3010PG VDE0303 VDE0804 VDE0884
    Text: K3010P, K3010PG Series Vishay Semiconductors Optocoupler, Phototriac Output, 250 VDRM FEATURES Note: pin 5 must not be connected ~ 6 1 A + • • • • ~ 5 4 3 NC 2 C (-) • • V D E • • 17221-2 17221-3 DESCRIPTION • • The K3010P, K3010PG series consists of a photo-transistor


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    PDF K3010P, K3010PG DIN/VDE0110 18-Jul-08 optocoupler P 521 EN60747-5-5 521 optocoupler K3012P-X007T 521 phototriac coupler K3010P VDE0303 VDE0804 VDE0884

    optocoupler P 521

    Abstract: OPTOCOUPLER 5V
    Text: K3010P, K3010PG Series Vishay Semiconductors Optocoupler, Phototriac Output, 250 VDRM FEATURES Note: pin 5 must not be connected ~ 6 1 A + • • • • ~ 5 4 3 NC 2 C (-) • • V D E • • 17221-2 17221-3 DESCRIPTION • • The K3010P, K3010PG series consists of a photo-transistor


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    PDF K3010P, K3010PG DIN/VDE0110 VDE0303/ 2002/95/EC 2002/96/EC 11-Mar-11 optocoupler P 521 OPTOCOUPLER 5V

    K*3090

    Abstract: K3090 2SK3090 k309 VID45
    Text: 2SK3090 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3090 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 16 mΩ (typ.) High forward transfer admittance : |Yfs| = 26 S (typ.)


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    PDF 2SK3090 K*3090 K3090 2SK3090 k309 VID45

    K3068

    Abstract: 2SK3068
    Text: 2SK3068 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3068 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 9.0 S (typ.)


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    PDF 2SK3068 K3068 2SK3068

    2SK3090

    Abstract: K3090
    Text: 2SK3090 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3090 Chopper Regulator DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 16 mΩ (typ.) z High forward transfer admittance


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    PDF 2SK3090 2SK3090 K3090

    cosmo 1010 817

    Abstract: cosmo 817 K1010 cosmo 1010 817 SHARP S21ME4 Liteon PC817 clare relay 1a15 KSD203DC2 aqy210 COSMO 1000 817 MCT2E CIRCUIT DIAGRAM
    Text: Photo Coupler Photo Coupler High Speed Function Type Transistor output Type Absoute Maximum Ratings Model Number Internal Connection IF VCEO IC Diagram mA (V) (mA) Viso (Vrms) Electro-optical Characteristics VF max (V) VCE (sat) max (V) CTR% Safty standards approval


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    PDF P3-1A15 P3-1A16 P3-1A17 P1-1A15 KW1S53FC KW1S54FC KW1S55FC KW1S56FC KW1S57FC cosmo 1010 817 cosmo 817 K1010 cosmo 1010 817 SHARP S21ME4 Liteon PC817 clare relay 1a15 KSD203DC2 aqy210 COSMO 1000 817 MCT2E CIRCUIT DIAGRAM

    2SK3051

    Abstract: K3051
    Text: 2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3051 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.)


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    PDF 2SK3051 2SK3051 K3051

    k3089

    Abstract: 2SK3089
    Text: 2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3089 Chopper Regulator DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 25 mΩ (typ.) z High forward transfer admittance


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    PDF 2SK3089 k3089 2SK3089

    k3067

    Abstract: K3067 transistor equivalent k3067 toshiba transistor k3067 2SK3067 transistor k3067
    Text: 2SK3067 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3067 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 4.2 Ω (typ.) z High forward transfer admittance


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    PDF 2SK3067 k3067 K3067 transistor equivalent k3067 toshiba transistor k3067 2SK3067 transistor k3067

    k3067

    Abstract: K3067 transistor toshiba transistor k3067 equivalent k3067 2sk3067 transistor k3067
    Text: 2SK3067 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3067 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 4.2 Ω (typ.) High forward transfer admittance : |Yfs| = 1.7 S (typ.)


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    PDF 2SK3067 k3067 K3067 transistor toshiba transistor k3067 equivalent k3067 2sk3067 transistor k3067

    k3017

    Abstract: 2SK3017
    Text: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK3017 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.05 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


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    PDF 2SK3017 k3017 2SK3017

    Untitled

    Abstract: No abstract text available
    Text: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSIII 2SK3017 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.05 High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current


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    PDF 2SK3017

    transistor K30A

    Abstract: K30A06J TK30A06J3 K30A06J3 k30a06 k30a TC5080
    Text: TK30A06J3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSⅢ TK30A06J3 Motor Drive Application Unit: mm Load Swithch Application Chopper Regulator and DC−DC Converter Application  Low drain-source ON resistance: RDS (ON) = 19 mohm (typ.)


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    PDF TK30A06J3 transistor K30A K30A06J TK30A06J3 K30A06J3 k30a06 k30a TC5080

    2SK3051

    Abstract: K3051
    Text: 2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3051 Chopper Regulator DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 24 mΩ (typ.) z High forward transfer admittance


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    PDF 2SK3051 2SK3051 K3051

    2SK3068

    Abstract: No abstract text available
    Text: 2SK3068 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3068 Chopper Regulator DC−DC Converter, and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 9.0 S (typ.)


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    PDF 2SK3068 2SK3068

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    TRANSISTOR 642

    Abstract: ca301b transistor 123 DL CA3018 CA3018A ICAN-5296 529B I426 f425 CA3016
    Text: Arrays E SOLID STATE 01 1 e | 3075001 DGlMSfifl 5 | CA3018, CA3018A General-Purpose Transistor Arrays Two Isolated Transistors and a Darlington-Connected Transistor Pair For Low-Power Applications at Frequencies from DC Through the VHF Range features: Matched monolithic general


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    PDF CA3018, CA3018A CA3018) CA3018A CA3018 I4260AI 92CS-M258RI 92CS-IS196 TRANSISTOR 642 ca301b transistor 123 DL ICAN-5296 529B I426 f425 CA3016

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    5V VSG MOSFET

    Abstract: high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


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    PDF BUK203-50X OT263 T0220 5V VSG MOSFET high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch

    BUK108-50GS

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.


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    PDF BUK108-50GS BUK108-50GS OT404

    2S0187

    Abstract: transistor 2SC460 2SB637 ok01 2Sd763 2SC1472 transistor 2sc454 transistor 2sb1028 2SA1666
    Text: SMALL SIGNAL TRANSISTOR •General amplifier Package Type No. code UPAK 2SB1000 2SB1000A 2SB1001 2SB1002 2 S fitlS 5 2SB1026 2SB1027 2SB1028 2SB1518 2SB1519 2SB1520 2SC3380 ■General switching Package Typo No. coda TO -92 2SA673A 2SA 778® 2SA778A® 2SA781 ®


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    PDF 2SB1000 2SB1000A 2SB1001 2SB1002 2SB1026 2SB1027 2SB1028 2SB1518 2SB1519 2SB1520 2S0187 transistor 2SC460 2SB637 ok01 2Sd763 2SC1472 transistor 2sc454 transistor 2sb1028 2SA1666