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    TRANSISTOR J4 SS 88 Search Results

    TRANSISTOR J4 SS 88 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J4 SS 88 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IN5817 schottky diode symbol

    Abstract: IN5817 diode Samsung Tantalum Capacitor TC1201 pin configuration transistor 2N2222 tc120x in5817 2N2222 NPN Transistor features A 673 C2 transistor 595D
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller FEATURES GENERAL DESCRIPTION • TC120 is a 300 KHz PFM/PWM step-down Buck DC/DC regulator/controller combination for use in systems operating from two or more cells, or in line-powered applications. It uses PWM as the primary modulation scheme, but


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    PDF TC120 TC120 TC120-1 DS21365A IN5817 schottky diode symbol IN5817 diode Samsung Tantalum Capacitor TC1201 pin configuration transistor 2N2222 tc120x in5817 2N2222 NPN Transistor features A 673 C2 transistor 595D

    MHDR1X2

    Abstract: CR3216-1206 d9 dl sot23 Capacitor Semiconductor SIM Model "EI CORE" Si7156DN MHDR1X MLP44-16 planar transformer layout EI 33 transformer
    Text: SiP11206DB Vishay Siliconix 200 W 1/16th Brick IBC Demo Board using SiP11206 DESCRIPTION SiP11206 is a half-bridge controller for intermediate bus converters. While SiP11206 allows for overall better efficiency through out the input voltage range, since its duty


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    PDF SiP11206DB 1/16th SiP11206 BAS16 MMUN2213LT1G S09-0324-Rev. MHDR1X2 CR3216-1206 d9 dl sot23 Capacitor Semiconductor SIM Model "EI CORE" Si7156DN MHDR1X MLP44-16 planar transformer layout EI 33 transformer

    Untitled

    Abstract: No abstract text available
    Text: EPC reserves the right at any time, without notice, to change said circuitry and specifications. Demonstration Board Notification The EPC9107 board is intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not


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    PDF EPC9107

    rca 17520

    Abstract: TRANSISTOR SMD nc46 8050 smd 3 pin transistor ice 0565 SMD TRANSISTOR ss 8050 transistor 8050 smd smd 8050 transistor 8050 smd transistor smd transistor 8050 pa15 transistor
    Text: ICEeSL-U XA In-Circuit Emulation Board for eSL/eAM Series 16-Bit DSP Sound Processor USER’S HANDBOOK Doc. Version V0.2 ELAN MICROELECTRONICS CORP. August 2006 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.


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    PDF 16-Bit rca 17520 TRANSISTOR SMD nc46 8050 smd 3 pin transistor ice 0565 SMD TRANSISTOR ss 8050 transistor 8050 smd smd 8050 transistor 8050 smd transistor smd transistor 8050 pa15 transistor

    PC MOTHERBOARD CIRCUIT diagram

    Abstract: No abstract text available
    Text: TSC2200 Touch Screen Controller Evaluation Module U s e r 's G u i d e User's Guide 2002 Data Acquisition Products SBAU076 THIS PAGE INTENTIONALLY LEFT BLANK IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any


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    PDF TSC2200 SBAU076 PC MOTHERBOARD CIRCUIT diagram

    capacitor 1uF 25V

    Abstract: VJ0603Y104KXAA diode wz5 noise diode generator
    Text: MIC2605/6 0.5A, 1.2MHz / 2MHz Wide Input Range Boost Regulator with Integrated Switch and Schottky Diode General Description Features The MIC2605/6 is a 1.2MHz/2MHz, PWM DC/DC boost switching regulator available in a 2mm x 2mm MLF package. High power density is achieved with the


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    PDF MIC2605/6 MIC2605/6 M9999-090909-B capacitor 1uF 25V VJ0603Y104KXAA diode wz5 noise diode generator

    Schottky Diode 40V 5A

    Abstract: capacitor 1uF 25V
    Text: MIC2605/6 0.5A, 1.2MHz / 2MHz Wide Input Range Boost Regulator with Integrated Switch and Schottky Diode General Description Features The MIC2605/6 is a 1.2MHz/2MHz, PWM DC/DC boost switching regulator available in a 2mm x 2mm MLF package. High power density is achieved with the


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    PDF MIC2605/6 MIC2605/6 M9999-080108-B Schottky Diode 40V 5A capacitor 1uF 25V

    Untitled

    Abstract: No abstract text available
    Text: MIC2601/2 1.2A, 1.2 / 2MHz Wide Input Range Integrated Switch Boost Regulator General Description Features The MIC2601/2 is a 1.2 and 2MHz, PWM DC/DC boost switching regulator available in a 2mm x 2mm MLF package. High power density is achieved with the


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    PDF MIC2601/2 MIC2601/2 M9999-062508-A

    Untitled

    Abstract: No abstract text available
    Text: MIC2601/2 1.2A, 1.2MHz/2MHz Wide Input Range Integrated Switch Boost Regulator General Description Features The MIC2601/2 is a 1.2MHz/2MHz, PWM DC/DC boost switching regulator available in a 2mm x 2mm MLF package. High power density is achieved with the


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    PDF MIC2601/2 MIC2601/2 M9999-072408-A

    R1206

    Abstract: PA0801 P8208T gate pulse transformer pa0264 pa0810 fzt853 pe 68386 R20 marking 22N55 SC1301A
    Text: SC4806 Multiple Function Double Ended PWM Controller POWER MANAGEMENT Description Features The SC4806 is a double ended, high speed, highly integrated PWM controller optimized for applications requiring minimum space. The device is easily configurable for current mode or voltage mode operation and contains


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    PDF SC4806 SC4806 R1206 PA0801 P8208T gate pulse transformer pa0264 pa0810 fzt853 pe 68386 R20 marking 22N55 SC1301A

    B360A

    Abstract: MIC2601 GRM21BR71C225KA12L
    Text: MIC2601/2 1.2A, 1.2MHz/2MHz Wide Input Range Integrated Switch Boost Regulator General Description Features The MIC2601/2 is a 1.2MHz/2MHz, PWM DC/DC boost switching regulator available in a 2mm x 2mm MLF package. High power density is achieved with the


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    PDF MIC2601/2 MIC2601/2 M9999-090909-A B360A MIC2601 GRM21BR71C225KA12L

    F/8205 dual mosfet

    Abstract: No abstract text available
    Text: DEMO MANUAL DC2006A-B LTC3862-2 High Power, High Voltage Step-Up Converter DESCRIPTION Demonstration circuit 2006A-B is a multiphase high power, high voltage step-up DC/DC converter featuring two the LTC 3862-2 boost controllers. This demo board converts


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    PDF DC2006A-B LTC3862-2 006A-B LTC3862-2. LTC3862-2 dc2006abf F/8205 dual mosfet

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC2006A-A LTC3862-2 High Power, High Voltage Step-Up Converter DESCRIPTION Demonstration circuit 2006A-A is a multiphase high power, high voltage step-up DC/DC converter featuring the LTC 3862-2 boost controller. This demo board converts a 6V to 36V input voltage to a 50V output at up to


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    PDF DC2006A-A LTC3862-2 006A-A LTC3862-2 DC2006A-A dc2006aaf

    ph 4148 diode

    Abstract: Diode ph 4148 ic 440 PIN DIAGRAM
    Text: SC4611 Wide Input Range High Performance Synchronous Buck Switching Regulator POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ SC4611 comes with a rich set of features like regulated ‹ Wide input range, 4.5 to 30V Output voltage as low as 0.5V 2A output drive capability


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    PDF SC4611 ph 4148 diode Diode ph 4148 ic 440 PIN DIAGRAM

    high voltage pnp transistor 700v

    Abstract: 743V pnp transistor 800v
    Text: Section 3.4 POWER MANAGEMENT 1C • Description The S-8470AFS is a CMOS power management 1C for portable telephones. It contains a watch­ dog timer circuit, in addition to four series-type voltage regulators and four voltage detectors. Features • Four built-in high-precision voltage regulators with


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    PDF S-8470AFS high voltage pnp transistor 700v 743V pnp transistor 800v

    transistor j4 ss 88

    Abstract: No abstract text available
    Text: an A M P com pany RF MOSFET Power Transistor, 8W, 12V 30 - 90 MHz FH2164 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012715 D esigned for Frequency H opping Systems 30-90 MHz Lower Capacitances for Broadband O peration


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    PDF A3012715 FH2164 transistor j4 ss 88

    D40192B

    Abstract: No abstract text available
    Text: CD40192BMS CD40193BMS i l i h a r r is uu semiconductor CMOS Presettable Up/Down Counters December 1992 D l lf ll G lO C k W it h R e s e t Features Description • CD40192BMS- BCD Type C D 40192BM S Presettable B C D Up/Down Counter and the C D 40193BM S Presettable Binary Up/Down Counter each con­


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    PDF CD40192BMS CD40193BMS CD40192BMS- CD40193BM CD40192BMS, CD40193BMS CD40192BMSH CD40193BMSH D40192B

    Untitled

    Abstract: No abstract text available
    Text: CD40102BMS CD40103BMS fS I H A R R I S S E M I C O N D U C T O R CMOS 8-Stage Presettable Synchronous Down Counters December 1992 Features Description • High Voltage Type 20V Rating CD40102BMS and CD40103BMS consist of an 8-stage syn­ chronous down counter with a single output which is active


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    PDF CD40102BMS CD40103BMS CD40102BMS CD40103BMS CD40102BMS,

    diode F4 3J

    Abstract: No abstract text available
    Text: 2DI3OD-O5OA 30a il , <7- WM-tm - )\s : Outline Drawings POWER TRAN SISTO R M ODULE ; Features 9 7 ' ) — f t ' ( ') ' s ÿ ÿ ' i • Iif e A 'IS I - ' • M S I K rt/K In c lu d in g Free W h e e lin g D io d e H ig h D C C u rre n t G ain In s u la te d T ype


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    PDF E82988 diode F4 3J

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES D iffused em itter ballasting resistors providing excellent cu rre n t sharing


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    PDF LLE18040X 125002/00/02/pp12

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device


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    PDF MRF5015 AN215A,

    philips 3595

    Abstract: BLX69 BLX69A 60306 cm 3593
    Text: 86D 0 1790 D T i N AMER P H I L I P S / D I S C R E T E ObE D • BLX69A bbSBTBl 0014028 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V, The transistor is resistance stabilized and is


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    PDF BLX69A philips 3595 BLX69 BLX69A 60306 cm 3593

    EFJ142

    Abstract: EFJ-142 SK9505
    Text: & HV400MJ/883 Aprii 1994 High Current M O SFET Driver Features Description • T h is Circuit Is P ro ce s s e d In A cc o rd a n ce to Mll-Std883 a n d Is Fully Con form an t U nd er the P rovisions of Paragraph 1.2.1. The HV400MJ/883 is a single monolithic, non-inverting high


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    PDF Mll-Std883 000pF HV400MJ/883 HV400MJ/883 1700x1820 483nm EFJ142 EFJ-142 SK9505

    CD4017 divide by 60 counter

    Abstract: CD4017 ICAN-6374 cd4059 application note ICAN-6374 IC CD4017 HS-109 Application note ICAN-6374 CD4017 internal diagram HS109 cd4017 application
    Text: I T ex a s I*n str u m e n t s CD4059A Types CMOS Programmable Divide-by-"N” Counter CL— • L— 2 Jl — 3 Standard "A"-Series Types <3-to-15-Volt Rating) • CD4059 standard "A"-Series types are divide-by-N down-cdunters that can be pro­ grammed to divide an input frequency by


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    PDF HS109 CD4059A 3-to-15-Volt CD4059 CD4017 divide by 60 counter CD4017 ICAN-6374 cd4059 application note ICAN-6374 IC CD4017 HS-109 Application note ICAN-6374 CD4017 internal diagram HS109 cd4017 application