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    TRANSISTOR IA 15 RCA Search Results

    TRANSISTOR IA 15 RCA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR IA 15 RCA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SCHEMATIC WITH IGBTS

    Abstract: AN8603 thyristor rca MOS-Gated Thyristor Abstract schematic power transistor
    Text: Harris Semiconductor No. AN8603.2 Harris Power MOSFETs December 1993 Improved IGBTs with Fast Switching Speed And High-Current Capability Authors: A.M. Goodman, J.R. Russell, L.A. Goodman, C.J. Nuese and J.M. Neilson Abstract Conventional vertical power MOSFETs are limited at high


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    AN8603 ED-26, SCHEMATIC WITH IGBTS thyristor rca MOS-Gated Thyristor Abstract schematic power transistor PDF

    AN8603

    Abstract: MOS-Gated Thyristor
    Text: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN8603.2 Abstract Conventional vertical power MOSFETs are limited at high voltages >500V by the appreciable resistance of their epitaxial drain region. In a new MOS-gate controlled device


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    AN8603 MOS-Gated Thyristor PDF

    AN-7505

    Abstract: fairchild low power transistor 1977
    Text: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract Title N86 bt mpro d BTs h t itch eed d ghrt paty utho eyrds terrpoon, minctor, er ) OCI O frk Conventional vertical power MOSFETs are limited at high


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    AN-7505 AN-7505 fairchild low power transistor 1977 PDF

    AN-7505

    Abstract: AN75 circuit diagram of thyristor controlled rectifier SCHEMATIC WITH IGBTS MOS-Gated Thyristor semiconductor power devices
    Text: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract /Title AN75 5 Subect Impro ed GBTs ith ast witch ng peed nd ighurent apaility) Autho ) Keyords Interil orpoation, emionuctor, Cretor () DOCI


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    AN-7505 AN-7505 AN75 circuit diagram of thyristor controlled rectifier SCHEMATIC WITH IGBTS MOS-Gated Thyristor semiconductor power devices PDF

    ICAN-5296

    Abstract: ICAN529
    Text: Arrays HARRIS S E M I C O N D U C T O R RCA GE C A 3 1 4 6 , C A 3 1 8 3 I N T E R S IL May 1990 High-Voltage Transistor Arrays Features: A pplica tio n s: • Matched general-purpose transistors m Vb e matched ± 5 mV max. u Operation from DC to 120 MHz CA3146AE, E


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    CA3146AE, CA3183AE, A3146, CA3183 ICAN-5296 ICAN529 PDF

    Untitled

    Abstract: No abstract text available
    Text: Operational Am plifiers C 3 E I HARRIS UU S E M I C O N D U C T O R HARRIS RCA GE CA3410A, CA3410 INTERSIL M ay 1 9 9 0 Quad BiMOS Operational Amplifiers With M O S F E T Input, Biploar Output Features: A pp lica tio n s: • Internally com pensated m MOSFET Input Stage


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    CA3410A, CA3410 CA3410E CA3410 PDF

    2N3839

    Abstract: 2N2857 2n3839 rca VHF transistor amplifier circuit
    Text: File No. 229 0Q Q BÆ I Power Transistors Solid State Division _ 2N3839 RCA-2N3839* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely use­ ful in low-noise-amplifier, oscillator, and converter applications at frequencies up to 500 MHz in the common-emitter configuration, and up to 1200 MHz, in the


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    2N3839 RCA-2N3839* 2N3839 2N2857, 2N2857 2n3839 rca VHF transistor amplifier circuit PDF

    TRIAC RCA ca3058

    Abstract: rca ca3240E CA311G CA101AT CA124G sn76013 CA1310 CA555CG Fuji Electric tv schematic diagram 40468A
    Text: RCA Linear Integrated Circuits This DATABOOK contains complete technical information on the full line of RCA standard commercial linear in­ tegrated circuits and MOS field-effect transistors for both industrial and con­ sumer applications. An Index to Devices provides a complete listing of


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    PDF

    RCA-2N5179

    Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor
    Text: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as


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    2N5179 RCA-2N5179* 2N5179 TA7319. 482mm) RCA-2N5179 2n5179 equivalent TA7319 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor PDF

    CA3046 RCA

    Abstract: CA3046E 3045F
    Text: Arrays m HARRIS S E M I C O N D U C T O R HARRIS RCA GE • CA3045, CA3046 INTERSIL M ay 1 9 9 0 General-Purpose N -P -N Transistor Arrays Three Isolated Transistors and O ne Differentially-C onnected Transistor Pair For L o w -P o w e r Applications at Frequencies from D C through the V H F R ange


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    CA3045, CA3046 CA3046 RCA CA3046E 3045F PDF

    chn 834 TRANSISTOR

    Abstract: High-Power 202A MOSFET CA3458T 40468A 3N128 equivalent ta7657 DIODE chn 548 TA7374 Thyristor chn 542 cd 40938
    Text: RCA Solid State Total Data Service System The RCA Solid State DATABOOKS are supplemented throughout the year by a comprehensive data service system that keeps you aware of all new device announcements and lets you obtain as much or as little product information as


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    -206A CR208 CR210 CR212 CR280 CR301 CR303 CR304 CR306 CR311 chn 834 TRANSISTOR High-Power 202A MOSFET CA3458T 40468A 3N128 equivalent ta7657 DIODE chn 548 TA7374 Thyristor chn 542 cd 40938 PDF

    TA2761

    Abstract: indiana general ferrites RCA-40608 HP608D transistor v2w 40608 CM 40608 field strength meter RCA Solid State Power Transistor BALLANTINE
    Text: File No. 356 [JUCBZTD ^ P o w e r T r a n s is to rs Solid State Division 40608 RCA-40608 is an ep itax ial silico n n-p-n p lan ar tra n s is ­ tor. I t is e s p e c ia lly designed for operation a s a C la s s A, wide-band power am plifier in VHF circu its.


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    RCA-40608 TA2761 100fi. I237R2 92CS-22857 TA2761 indiana general ferrites HP608D transistor v2w 40608 CM 40608 field strength meter RCA Solid State Power Transistor BALLANTINE PDF

    rca transistor manual

    Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
    Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­


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    PDF

    RCA LM324

    Abstract: LM324L
    Text: Operational Amplifiers HARRIS S E M I C O N D U C T O R RCA C A 124, C A 224, CA324, C A 2902, LM 324*, LM 2902* INTERSIL May 1990 Quad Operational Amplifiers For Commercial, Industrial, and Military Applications Features: A pp lica tio n s: • a a a ■


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    CA324, CA224, CA2902, LM324, LM2902 CA124 CA124, RCA LM324 LM324L PDF

    2N918

    Abstract: 2N3600 RCA-2N918 874-LA N3600 LA 4303 TO72 package RCA-2N3600 RCA Transistor 2n918 transistor
    Text: File No. 83 R F Pow er T r a n s is t o r s Solid State Di vision 2 N 918 2 N3600 RCA-2N918 and RCA-2N3IÏ00 are double-diffused epitaxial planar tran sisto rs o f the silicon n-p-n type. They are extremely useful in low -noise-am plifier, o sc il­ lator, and converter applications at VHF frequencies.


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    2N918 N3600 RCA-2N918 RCA-2N3600 2N918 2N3600 2N3600 874-LA N3600 LA 4303 TO72 package RCA Transistor 2n918 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MOE » HARRIS SEflICÔN» SECTOR ill U U HARRIS H A R R IS S E M I C O N D U C T O R RCA QE • 4302271 0034300 5 1 HAS Military & Aerospace Products IN TERSIL HCTS190MS T-H5-23-OH 5 iE 13] RC High-Reliability Radiation-Hardened High-Speed CM OS/SOS Synchronous


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    T-H5-23-OH HCTS190MS 50kHz 25kHz 10kft 680fJ PDF

    Untitled

    Abstract: No abstract text available
    Text: m HARRIS Military & Aerospace Products • RCA - GE • INTERSIL HCS245MS DIR [ T 20] VDD AO [~2 i | ] OE Al ^ is] BO High-Reliability Radiation-Hardened High-Speed CMOS/SOS Octal Transceiver A2 T B1 A3 | j f Te] B2 Aerospace Class S Screening A4 ^ is ] B3


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    HCS245MS HCS245MS -200nA 200nA PDF

    Narda 904N

    Abstract: transistor et 455 sealectro 2N5470 equivalent transistor rf AN3764 Narda Microwave TA7003 WESTINGHOUSE ELECTRIC 0/Narda 904N
    Text: File No. 350 RF P o w e r T r a n s is to rs Solid State Division 2N5470 RCA-2N5470* is an epitaxial silicon n-p-n planar transistor employing the overlay emitter-electrode con­ struction. It is intended for solid-state microwave radiosonde, communications, and S-band telemetry


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    2N5470 RCA-2N5470* 2N5470 2N5470, AN3764, 16-Detail Narda 904N transistor et 455 sealectro equivalent transistor rf AN3764 Narda Microwave TA7003 WESTINGHOUSE ELECTRIC 0/Narda 904N PDF

    RCA Solid State Power Transistor

    Abstract: RCA Solid State power devices rca transistor RCA Solid State amplifier RCA1001 RCA transistors DD173 RCA1000 DD1731D rca+349+DARLINGTON
    Text: E SOLI» STATE 3875081 □1 G E SOLID STATE D 0 1E Darlington Power Transistors_ 3Ö7SDÖ1 001730Ö □ | ~ 17308 •RCAiooo; RCA1001 File Num ber 594 8-Am pere Silicon N -P -N Darlington Power Transistors For Use as Output Devices in General-Purpose


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    dT-23-2 RCA1001 RCA1000 3fl750fll DD1731D RCA1000, HCS-I9144II RCA Solid State Power Transistor RCA Solid State power devices rca transistor RCA Solid State amplifier RCA1001 RCA transistors DD173 DD1731D rca+349+DARLINGTON PDF

    "MC 140" transistor

    Abstract: MC 140 transistor transistor mc 140 2N3229 transistor a200 MC 150 transistor RCA TO60 TRANSISTORS
    Text: File No. 50 ^ R F P o w e r T r a n s is t o r s Solid State Division RCA-2N3229 transistor This up to FM, 150 The package from to all is and the silicon intended CW n-p-n for service type. applications at H ig h -P o w e r, frequencies Me . 2N3229 which the


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    2N3229 RCA-2N3229 2N3229 I2045AS 01AMETER "MC 140" transistor MC 140 transistor transistor mc 140 transistor a200 MC 150 transistor RCA TO60 TRANSISTORS PDF

    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


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    AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U PDF

    Untitled

    Abstract: No abstract text available
    Text: Arrays ffl H A R R IS S E M I C O N D U C T O R RCA GE CA3127 INTERSIL May 1990 High-Frequency N -P -N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz F e a tu re s : A pplications: G am -b an d w id th p ro d u c t f j > 1 GHz


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    CA3127 100-MHz PDF

    WF VQE 22 c

    Abstract: CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE
    Text: G E SOLID STATE Dl D E | 3fl75Clfll G014b3fc> 1 | A rra y s ' CA3118, CA3146, CA3183 T 'H ^ ZS High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ Vgg matched + 5mV max. ■ Operation from DC to 120 MHz CA3118AT, T; CA3146AE, E


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    G014b3k CA3118, CA3146, CA3183 CA3118AT, CA3146AE, CA3183AE, WF VQE 22 c CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE PDF

    CA314E

    Abstract: CA3146E RCA CA3183E CA-3018 ca3118 CA3118AT CA3146AE 3183a CA3146E two transistor forward
    Text: G E SOLID STATE Dl D E I 3fl75Clfll G014b3fc> 1 | Arrays CA3118, CA3146, CA3183 “T * H 3 * Z S High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ V g £ matched + 5m V max. ■ Operation from DC to 120 MHz CA 3118AT, T ; CA 3146A E, E


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    CA3118, CA3146, CA3183 CA3118AT, CA3146AE, CA3183AE, RCA-CA3118AT, CA3118T, CA314E CA3146E RCA CA3183E CA-3018 ca3118 CA3118AT CA3146AE 3183a CA3146E two transistor forward PDF