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    TRANSISTOR H 945 Search Results

    TRANSISTOR H 945 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR H 945 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLX92A

    Abstract: feedthrough cap
    Text: P H I L IP S I N T E R N A T I O N A L 41E D S3 711ÜÖSb 0057Ö37 G H P H I N BLX92A M A IN TE N A N C E TYPE r-33~0S U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF BLX92A 711002b 002704b BLX92A feedthrough cap

    lc 945 p transistor

    Abstract: 852 d TRANSISTOR lc 945 p transistor NPN 2sc945 2SC945 Y 2SA733 2sc 945 p transistor MICRO ELECTRONICS transistor amplifier 5v to 6v 2SA733 Y
    Text: 2SC 945 NFN SILICON PIANAR EPITAXIAL TRANSISTOR 1I o h ! i| '£ ? r - r - . , - í ^ .- - .i '•-ÿ ! « f c * CASE TO-92B 2SC 945 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTARY TO THE PNP TYPE 2SA733.


    OCR Scan     		PDF 2SC945 O-92B 2SC945 2SA733. 100mA 200mA 250mW lc 945 p transistor 852 d TRANSISTOR lc 945 p transistor NPN 2SC945 Y 2SA733 2sc 945 p transistor MICRO ELECTRONICS transistor amplifier 5v to 6v 2SA733 Y

    lc 945 p transistor NPN

    Abstract: BFR96S
    Text: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device


    OCR Scan     		PDF hhS3R31 D031A15 BFR96S BFQ32S. BFR96S/02 lc 945 p transistor NPN BFR96S

    lv 5682

    Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
    Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically


    OCR Scan     		PDF RD60HUF1 RD60HUF1 lv 5682 mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 MOSFET, 3077 transistor k 2837

    Untitled

    Abstract: No abstract text available
    Text: OLE D N AUER PHILIPS/DISCRETE 86D MAINTENANCE TYPE ^5 3 *1 3 1 DOIHQIQ 1 T ~ 3 ?-o y D 01852 • BLX96 _Jl U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u .h .f. amplifiers for television transposers and transmitters.


    OCR Scan     		PDF BLX96 7ZH737 bbS3T31 -16dB)

    transistor NEC D 986

    Abstract: TC-7860 TH 2190 transistor* tf 7860 3r j 2SC4810 d1560
    Text: z r — • y — h /\° 7 - h 7 > ÿ x i ! Darlington Power Transistor 2SC4810 h-7 > v X ^ m 2S C 4810«, Î ; ê m & Z # - V > h > 1$ M ' f v ï x ï m y ( 7 ) ^ - U > h > / \ ° 7 - h 5 > '> 'X ^ T - T o OA, 7 v 7 7 ^ x - t ; > ^ t t ^ i T i l Î l l l ^ ^ B T ^ 4 ' / \ 07 ^ - v " e * U ,


    OCR Scan     		PDF 2SC4810 2SC4810Â D15601JJ2V0DS00 TC-7860) transistor NEC D 986 TC-7860 TH 2190 transistor* tf 7860 3r j 2SC4810 d1560

    BLX13C

    Abstract: BY206 PHILIPS 4312 amplifier philips carbon film resistor 3mss HF SSB APPLICATIONS RF 28 v
    Text: bSE D m 7110ÛEL □Db34Mcl 42Ô M P H I N BLX13C PHILIPS I N T E R N A T I O N A L _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting amplifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear


    OCR Scan     		PDF Db34Mcl BLX13C 711005b 00fci34S7 7Z77839 BLX13C BY206 PHILIPS 4312 amplifier philips carbon film resistor 3mss HF SSB APPLICATIONS RF 28 v

    transistor rf m 9860

    Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490
    Text: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for


    OCR Scan     		PDF 520MHz RD30HUF1 520MHz 25deg Jun008 RD30HUF1 transistor rf m 9860 equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490

    em 483

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR /IPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES • H igh fT


    OCR Scan     		PDF /IPA804T 2SC4571 2SC4571) uPA804T em 483

    sje 2762

    Abstract: uPA671T transistor a935 a935 transistor ic-8845
    Text: h — '> U =1 > Silicon Transistor UPA671T P N P X l h 7 > fé J ^ Æ v 7 ^ 6 t f > 2 IU îèS Ü 'f iÆ /¿PA671TO, h 7 > v Z $ £20Ï&F*3Ü? U/c 5 K x / \ '< x U , Ü H æ j f CD[S]±, x h ^ g lM i;: » i l / S t o <=D m o S C - 7 0 / \° "J * T- v £ IH D tt- - f X < D / \" "J >t -


    OCR Scan     		PDF uPA671T PA671TO, sje 2762 transistor a935 a935 transistor ic-8845

    uPA609T

    Abstract: MPA609T AAHC IC-8847 PA609T transistor a935 lm 7914 1S955 cb-40 nec I-7520
    Text: ï r — •£? • — h NEC V U = 1 > Silicon Transistor iuPA609T N P N / P N P X =*■ v MPA609T « DC/DC =1> /S'- £ V =1 > h 7 > '/ X ^ H im ? ft -5/* 9 - MOS W iS . : mm FET W -if— S 7)7'U K 7 < ^ Ì C f t ì S 4 ' S :?-:& = l> 7 ,' i; ^ > * U - ? 2 * i r tl*


    OCR Scan     		PDF uPA609T MPA609T IEl-620) MPA609T AAHC IC-8847 PA609T transistor a935 lm 7914 1S955 cb-40 nec I-7520

    TRANSISTOR si 6822

    Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822
    Text: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to


    OCR Scan     		PDF uPA2981 uPA2982 TRANSISTOR si 6822 SI 6822 PA2981C transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR TRANSISTOR NPN 6822

    ic ntp- 3000

    Abstract: IIH13 Scans-0088096
    Text: z r— S 7 • 5^— h Com pound Transistor C E2A 3Q í&í¡fcF*3J & N P N x C E2A 3Q • i' t — ¿ Í S I i» ^ Y iP ^ M L tz , ^ H ig h 9 f- i i - n ^ M '> l □ ^ Vs? > '> * ? h F E ÎS ÎÆ R Â h 7 's ^ w 'J X 9 X % ? - r O A i K 7 i y ’m t l - C f t i l T t o


    OCR Scan     		PDF IEI-620) PWS10 TC-6083A ic ntp- 3000 IIH13 Scans-0088096

    lt 6228

    Abstract: SKs TRANSISTOR 7 flu 0286 048164 SIS 900 SKs 83 PA82 transistor 2 FC 945
    Text: 7 s— S ' • i / - h C S 5 t NEC i í T / v r a - a - ^ > ' ^ 7 .9 C om po u n d Transistor z ¿¿PA82 P N P -N P N X lJ -1 > h ¿/PA82CÜ, PNPfc «tt/N P N v 'i n > h V 8 B K ÍM c £ Í ^>y ? IC -ffcL * h 7 > ÿ x ^ r i / n - t o TTL MOS L SI ¿OÍÜ*


    OCR Scan     		PDF uPA82 /PA82CÜ lt 6228 SKs TRANSISTOR 7 flu 0286 048164 SIS 900 SKs 83 PA82 transistor 2 FC 945

    2sc4814

    Abstract: transistor C017 258 c017
    Text: X — £ • y h — V y a > /\°7 - b 7 > v z .$ Silicon Power Transistor 2SC4814 NPN X tf £ V T Jls B y ' j 3 > h 7 > ÿ X ^ Í S * X < 7 Í > ^ f f l 2 S C 4 8 1 4 à, «F lÊ M W lÆ V fà h FE? j y c V ' ' ! ? - h 7 > ïs X ? T t o OA, F A ^ è ^ ^ / U X ^ - ^ - ^ y y '>


    OCR Scan     		PDF 2SC4814 2SC4814 D15604JJ2V0DS00 transistor C017 258 c017

    TC-7900

    Abstract: 2SK2054
    Text: = r — • 2 / — ? h M O h S = 7 > i> X $ M O S Field Effect Transistor 2SK2054 N M ¡ S 2SK2054 Ü N f t iti t l f - X j j S % y x 7 f S F E T - > IC <D MOS F E T T", 5 V h M c l E ! # * «T M & X ' f ^ O £ W I H W Ì : mm; > ?"M T- V t o >y i - > r m


    OCR Scan     		PDF 2SK2054 IEI-620) TC-7900 2SK2054

    T460

    Abstract: t460 transistor C947 ic 4541 c947 transistor transistor 9619 M 9619 JT MARKING 2SB800 2SD1001
    Text: '> ' = ! > h =7 > Ì > ~ X 9 Silicon Transistor 2SD1001 N o -t — T 'i O ^ N x f ^ + - > 7 ; H K '> U h = 7 > i> 'X ^ K 7 -i 2SB 800 o P i mm) t ? >7° ' ) / > 9 >J T " f € ^ T " ë t t 0 Î B * , ifijIÎE, r^jhFE'C"t’o 1.5 ± 0.1 P T = 2 .0 W (0 .7 mm X 16 cm2- t e ^ -y


    OCR Scan     		PDF 2SD1001 2SB800 OT-89) T460 t460 transistor C947 ic 4541 c947 transistor transistor 9619 M 9619 JT MARKING 2SD1001

    D1559

    Abstract: 2SC4351 m027 TD-7509
    Text: — y 3 1 • y — b # - ' J > b > n '7 Darlington Power Transistor 2SC4351 N P N lfc f^ + v r ^ y 2 S C 4 3 5 1 á , ït5 M ;M 7 W " - U > OA • F A ^ ^ í7 /^ X Í- ^ ^ 7 " 7 U =i> h 7 > v ^ i ' h > ^ 0,7 - F x ^ X ^ - C t o ÿ k X i - ^ W P W M ( # - U > h >JtíJí;


    OCR Scan     		PDF 2SC4351 2SC4351 D15594JJ2V0DS00 TD-7509) D1559 m027 TD-7509

    Untitled

    Abstract: No abstract text available
    Text: h ~7 > V DTC144WU/DTC144WK/DTC144WS/DTC144WF DTC144WL/DTC144WA/DTC144WV $ / T ransistors DTC144WU/DTC144WK/DTC144WS DTC144WF/DTC144WL/DTC144WA DTC144WV l> Z 7> y 7, < "j ^-/Transistor Switch Digital Transistors Includes Resistors • £t-ffJ^f>£l2/Dimensions (U n it: mm)


    OCR Scan     		PDF DTC144WU/DTC144WK/DTC144WS/DTC144WF DTC144WL/DTC144WA/DTC144WV DTC144WU/DTC144WK/DTC144WS DTC144WF/DTC144WL/DTC144WA DTC144WV

    IC-8857

    Abstract: fbise t460 transistor bth 200 63445-5 UPA674T
    Text: : r — — h '> > ; □ > h 7 > v x ^ PA674T Silicon Transistor N P N / P N P X fc f£ ^ V U ^ > h 7 / / P A 6 7 4 T « S jI^ - f 7 f > ^ h 7 > v X ^ ^ > y U * > 2 U ? 2 Ü IŸ F « U > V X ^ m O .: mm - Ï - m ìg iÈ D fà ± t > j:t fm m 3 x S ^ lM t c » ® u S - r o


    OCR Scan     		PDF uPA674T IEI-620) ETS14 IC-8857 fbise t460 transistor bth 200 63445-5

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    Westinghouse diode

    Abstract: KS8245A1 WESTINGHOUSE dc motor Westinghouse power diode S-8245 WESTINGHOUSE ELECTRIC westinghouse ac motor ks82
    Text: r 7294621 PQWEREX INC dT | 75^51 DOOgflflT 7 B ~ — & Single Darlington TRANSISTOR Module Dim A B C D E F G H J K Inches 1.54 Max 1.27 * 0.008 .77 .65 .94 .276 .146 .165 .945 .126 T-33-35 15 Amperes 450 Volts Millimeters 39 Max 32.2 * 0.2 19.5 16.6 24 Max


    OCR Scan     		PDF T-33-35 KS8245A110 75T4b21 KS8245A110 Westinghouse diode KS8245A1 WESTINGHOUSE dc motor Westinghouse power diode S-8245 WESTINGHOUSE ELECTRIC westinghouse ac motor ks82

    nec 2501 LD 932

    Abstract: nec 2501 LD 229 NEC 2501 LE 240 transistor c 839 nec 2501 LD
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r U HF. PACKAGE DRAW INGS (U n it: m m) FEATURES 2.1 ± 0.1


    OCR Scan     		PDF uPA804T 2SC4571 2SC4571) nec 2501 LD 932 nec 2501 LD 229 NEC 2501 LE 240 transistor c 839 nec 2501 LD

    2SK1132

    Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B
    Text: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4


    OCR Scan     		PDF 2SJ165 2SK1132 TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B