TPC8024
Abstract: TPC8024-H
Text: TPC8024-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8024-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package
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TPC8024-H
TPC8024
TPC8024-H
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TPC8020
Abstract: TPC8020-H
Text: TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8020-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package
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TPC8020-H
TPC8020
TPC8020-H
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TPC8020
Abstract: TPC8020-H
Text: TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8020-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to a small and thin package
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TPC8020-H
TPC8020
TPC8020-H
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tpc8020
Abstract: TPC8020-H
Text: TPC8020-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High-Speed U-MOSIII TPC8020-H High-Speed and High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package
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TPC8020-H
tpc8020
TPC8020-H
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TPC8020
Abstract: TPC8020-H
Text: TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to a small and thin package
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TPC8020-H
TPC8020
TPC8020-H
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TPC8024-H
Abstract: tpc8024 transistor marking 2A H
Text: TPC8024-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8024-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to a small and thin package
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TPC8024-H
TPC8024-H
tpc8024
transistor marking 2A H
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TPC8007-H
Abstract: TPC8007
Text: TOSHIBA TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U - M O SII TPC8007-H LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS
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TPC8007-H
TPC8007-H
TPC8007
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transistor vergleichsliste
Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N
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Untitled
Abstract: No abstract text available
Text: P D -9.1023 hïtemational H ü Rectifier IRGPC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGPC30F
10kHz)
5S452
O-247AC
G0nfi70
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC8007-H NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS SOP-8 LITHIUM ION BATTERY APPLICATIONS
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TPC8007-H
10//A
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC80Q7-H LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS
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TPC8007-H
TPC80Q7-H
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1699 International IO R Rectifier ir f e h o JANTX2N6782U HEXFET TRANSISTOR JANTXV2N6782U [REF:MIL-PRF-19500/556] R E P E T IT IV E A V A LA N C H E A N D d v /d t R A TED N -C H A N N E L Product Summary 100V olt,0.60ii, HEXFET
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JANTX2N6782U
JANTXV2N6782U
MIL-PRF-19500/556]
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1332B International TOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM7260 IRHM8260 REPETITIVE AVALANCHE AND N -C H A N N E L MEGA RAD HARD 200Volt, 0.070Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r ’ s R A D H A R D te c h n o lo g y
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1332B
IRHM7260
IRHM8260
200Volt,
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Untitled
Abstract: No abstract text available
Text: International pm a Hü Rectifier_ IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast™ IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC50U
O-254
IRGMC50UD
IRGMC50UU
G-105
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Untitled
Abstract: No abstract text available
Text: P D - 91740 International I R Rectifier R EPETITIVE AVALANCHE AND dv/dt RATED IRHNB7360SE HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 400Volt, 0.20Q, (SEE) RAD HARD HEXFET International R e ctifie r’s (SEE) RAD H AR D te c h n o l
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IRHNB7360SE
400Volt,
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Untitled
Abstract: No abstract text available
Text: P D - 91741 International I R Rectifier dv/dt HEXFET TRANSISTOR R EPETITIVE AVALANCHE AND RATED IRHNB7460SE N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500Volt, 0.32Q, (SEE) RAD HARD HEXFET Product Summary International R e ctifie r’s (SEE) RAD H AR D te c h n o l
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IRHNB7460SE
500Volt,
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Untitled
Abstract: No abstract text available
Text: P h ilip s S e m ic o n d u c to rs-S ig n e llc s F A S T T T L L o g ic S e rie s SECTION 3 Circuit Characteristics INPUT STRUCTURES There are three types of input structures used in FAST circuits: diffusion diode, PNP vertical transistor, and NPN transistor. Each of these
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F3037
F3040
F30244
F30245
F30640
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1701 International IOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM7Z60 IRHM8Z60 REPETITIVE AVALANCHE AND N -C H A N N E L MEGA RAD HARD 30 Vo It, 0.014Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’ s R A D H A R D te c h n o lo g y
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IRHM7Z60
IRHM8Z60
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1564B International l R Rectifier dv/dt R A TE D HEXFET TRANSISTOR IRHM7064 IRHM8064 REPETITIVE A V A L A N C H E AND N -C H A N N E L MEGA RAD HARD 60Volt, 0.021 il, MEGA RAD HARD HEXFET International R ectifie r’s RAD HARD technology
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1564B
IRHM7064
IRHM8064
60Volt,
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Untitled
Abstract: No abstract text available
Text: bitemational H r Rectifier PD - 9.784A IRGB420U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGB420U
O-220AB
C-579
4AS54S2
O-22QAB
C-580
SSH55
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Untitled
Abstract: No abstract text available
Text: International ««•"« B H Rectifier_ IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC40F
IRGMC40FD
IRGMC40FU
MIL-S-19500
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Visil
Abstract: 100-P BUK101-50 BUK101-50DL T0220AB BUK101-500L
Text: b5E D PHILIPS INTERNATIONAL m 7110aEb DQfc.37^1 405 « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected loaic level power MOSFET in a 3 pin plastic
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BUK101-50DL
Iisc/Iisq25
sl25-C
Visil
100-P
BUK101-50
BUK101-50DL
T0220AB
BUK101-500L
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transistor C456
Abstract: smd transistor NG c456 transistor
Text: Provisional Data Sheet No. PD - 9.885B International l ö R Rectifier IRHN9150 IRHN93150 R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR P-CHANNEL RAD HARD -100Volt, 0 .075^ , RAD HARD HEXFET International R e ctifie r’s P -C hannel RAD H AR D te c h
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-100Volt,
transistor C456
smd transistor NG
c456 transistor
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ITH13F06B
Abstract: C25 diode ITH13F06
Text: ITH13F06 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R A dvance Inform ation DS4989-2.3 O ctober 1998 T h e IT H 1 3 F 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range
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ITH13F06
DS4989-2
ITH13F06
ITH13F06B
C25 diode
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