2SK3266
Abstract: 2SC4639 FC22
Text: FC22 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp, AM Applications TENTATIVE Features • Composite type with an J-FET transistor and a PNP transistor contained in the conventional CP package, improving the
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2SC4639
2SK3266,
10IB1
--20V
990128TM2fXHD
2SK3266
FC22
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Untitled
Abstract: No abstract text available
Text: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J HIGH FREQUENCY AMPLIFIER APPLICATIONS AM HIGH FREQUENCY AMPLIFIER APPLICATIONS AUDIO FREQUENCY AMPLIFIER APPLICATIONS Unit in mm MAXIMUM RATINGS Ta = 25°C
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HN3G01J
100mA,
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Untitled
Abstract: No abstract text available
Text: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications Unit in mm Absolute Maximum Ratings Ta = 25°C
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HN3G01J
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Untitled
Abstract: No abstract text available
Text: KTX955T SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA AM BAND AMPLIFLER APPLICATION E FEATURES B Composite type with J-FET and NPN transistors contained in a package. 1 improving the mounting effciency
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KTX955T
270Hz
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KTX955T
Abstract: No abstract text available
Text: KTX955T SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA AM BAND AMPLIFLER APPLICATION E FEATURES B Composite type with J-FET and NPN transistors contained in a package. 1 improving the mounting effciency
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KTX955T
EMKTX955T
270Hz
KTX955T
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Untitled
Abstract: No abstract text available
Text: KTX955T SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA AM BAND AMPLIFLER APPLICATION E FEATURES B ・Composite type with J-FET and NPN transistors contained in a package. 1 improving the mounting effciency
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KTX955T
270Hz
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2SC4639
Abstract: FC12 DS15A FC12F
Text: Ordering number:ENN3482 TR:NPN Epitaxial Plannar Silicon Transistor FET:N-Channel Junction Silicon Transistor FC12 High-Frequency Amp, AM Applications, Low-Frequency Amp Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
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ENN3482
2SC4639,
2SC4639
FC12
DS15A
FC12F
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2SC4639
Abstract: FC12
Text: Ordering number:EN3482 FC12 TR:NPN Epitaxial Plannar Silicon Transistor FET:N-Channel Junction Silicon Transistor High-Frequency Amp, AM Applications, Low-Frequency Amp Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
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EN3482
2SC4639,
2SC4639
FC12
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BUK444
Abstract: BUK444-500A BUK444-500B
Text: N AMER P H I L I P S / D I S C R E T E asE kb53T3 1 GDSG37G 1 j> BUK444-500A BUK444-500B PowerMOS transistor T - 3 7 - 0 9 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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kb53T3i
Goaa37a
BUK444-500A
BUK444-500B
BUK444
-500A
-500B
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Untitled
Abstract: No abstract text available
Text: HN3G01J TOSHIBA TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR H N ^ m i HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. MAXIMUM RATINGS Ta = 25°C
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HN3G01J
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BTS630
Abstract: GDS5163 KSP8598 KSP8599
Text: KSP8598/8599 PNP EPITAXIAL SILICX N TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: VCeo = KSP8598: 60V KSP8599: 80V • C ollector Dissipation: P c max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage
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KSP8598/8599
KSP8598:
KSP8599:
625mW
KSP8598
KSP8599
-100nA,
BTS630
GDS5163
KSP8598
KSP8599
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3G01J TO SH IBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS AM HIGH FREQUENCY AM PLIFIER APPLICATIONS +0.2 0.1 1 .6 _ ] AUDIO FREQUENCY AM PLIFIER APPLICATIONS
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HN3G01J
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N3G01J
Abstract: HN3G01J EG160
Text: TOSHIBA HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR H N3G01J HIGH FREQUENCY AM PLIFIER APPLICATIONS AM HIGH FREQUENCY AM PLIFIER APPLICATIONS AUDIO FREQUENCY AM PLIFIER APPLICATIONS M A X IM U M RATINGS Ta = 25°C
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HN3G01J
N3G01J
N3G01J
HN3G01J
EG160
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10J2
Abstract: 3LV2 BLV20 TRANSISTOR 2X5 sot
Text: •i bb53T31 0025^33 624 H A P X BLV20 b'ìE T> N AMER PH I L I P S /D IS C RE T E V.H.F. POWER TRANSISTOR N -P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nom inal sup p ly voltage of 2 8 V . Th e transistor is resistance stabilized and is guaran
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bb53T31
BLV20
OT-123.
7Z68947
7z68946
7Z68948
10J2
3LV2
BLV20
TRANSISTOR 2X5 sot
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MMBR911LT1
Abstract: sot23 transistor marking ZTf TIL 414 MARKING ZTf SOT23 TRANSISTOR
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package. This Motorola small-signal plastic transistor offers superior quality and performance
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A/500
MMBR911LT1
sot23 transistor marking ZTf
TIL 414
MARKING ZTf SOT23 TRANSISTOR
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MAM25S
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES PMBT5550 PINNING • Low current max. 300 mA PIN • Low voltage (max. 140 V). 1 2 emitter APPLICATIONS 3 collector DESCRIPTION base • Telephony. DESCRIPTION — 3 NPN high-voltage transistor in a SOT23 plastic package.
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PMBT5550
PMBT5401.
MAM25S
MAM25S
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35vt
Abstract: 2SC4639
Text: Ordering number: EN3482. _ F C 1 2 T R : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon Transistor High-Frequency Amp, AM Applications, Low-Frequency Amp F e a tu re s • Composite type with 2 transistors contained in the CP package currently in use, improving the
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EN3482.
2SC4639,
35vt
2SC4639
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2PC4081
Abstract: 2PC4081Q 2PC4081R 2PC4081S transistor ZR
Text: N AMER P H ILIP S /D IS C R E TE b' î E 1^53^31 □□Sfilza 523 J> lÂPX Objectivespecification Philips Semiconductors 2PC4081 NPN general purpose transistor FEATURES • S-mini package • Low output capacitance, Cob = 2 pF typ. . DESCRIPTION NPN transistor in a plastic three lead
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2PC4081
2PC4081Q
2PC4081R
2PC4081S
2PC4081
transistor ZR
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transistor IC BT 134
Abstract: BUV89
Text: I I N AMER PHILIPS/DISCRETE b'ìE D • bbSB'iBl GDSflMTO TÖ5 ■ APX I BUV89 - A _ SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed sw itching npn tran sisto r in a plastic SO T93 envelope especially intended fo r
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BUV89
OT93A.
transistor IC BT 134
BUV89
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transistor BF245
Abstract: BF245 Fet BF245 transistor BF245 A UHF transistor FET
Text: IsK U N-CHANNEL JUNCTION FET DESCRIPTION BF245 Effect is N-Channel Transistor TO-92 Junction Field designed for VHF/UHF amplifiers and mixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V Drain Current
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BF245
300mW
200/xA
300/xS,
transistor BF245
Fet BF245
transistor BF245 A
UHF transistor FET
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BF245
Abstract: transistor BF245 Fet BF245 BF245 TRANSISTOR FET TO-92
Text: G U M O M te tr, DESCRIPTION BF245 is N-Channel Junction Effect Transistor designed VHF/UHF amplifiers and mixer. CRO BF245 N-CHANNEL JUNCTION FET TO-92 Field for GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage Gate-Source Voltage
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BF245
BF245
300mW
300/xS,
200/xA
transistor BF245
Fet BF245
BF245 TRANSISTOR
FET TO-92
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transistor BF245
Abstract: fet BF245 BF245 transistor BF245 A BF245 TRANSISTOR transistor gds "igss 5 na"
Text: BF245 N-CHANNEL JUNCTION FET DESCRIPTION TO-92 BF245 is N-Channel Junction Field Effect Transistor designed for V HF/U H F amplifiers and m ixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V
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BF245
300mW
300/xS,
transistor BF245
fet BF245
transistor BF245 A
BF245 TRANSISTOR
transistor gds
"igss 5 na"
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159MHz
Abstract: BFR36
Text: 3QE » • 7^237 QDaD'îSS 1 ■ £ÿj SGS-THOMSON 'Tv £\-Z2> 0 [F il© [i[L [i© im « l_ B F R 3 6 S G S-THOMSON CATV ULTRA-LINEAR HIGH GAIN TRANSISTOR DESCRIPTION T h e B F R 36 is a multi-emitter silicon planar epitaxial N P N transistor in Jedec T O -3 9 m etal case. It is desi
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T-31-23
T--31--23
159MHz
57MHz
159MHz
BFR36
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transistor hh 004
Abstract: KTK117 hh 004 f
Text: SEMICONDUCTOR TECHNICAL DATA KTK117 N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES • High I yfS I : 15mS Typ. . : (VDS=10V, Vgs=0) • High Breakdown Voltage : V gds = _ 50 V . • Low Noise : NF=1.0dB(Typ.). (V d s =10V , ID=0.5mA, f=lkHz, Rg=lkQ)
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KTK117
120MHz)
transistor hh 004
KTK117
hh 004 f
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